PTFA192001E V4 Search Results

PTFA192001E V4 Price and Stock

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Infineon Technologies AG PTFA192001EV4XWSA1 RF MOSFET LDMOS 30V H-36260-2
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DigiKey	PTFA192001EV4XWSA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG PTFA192001EV4R0XTMA1 RF MOSFET LDMOS 30V H-36260-2
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DigiKey	PTFA192001EV4R0XTMA1					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG PTFA192001EV4R250XTMA1 RF MOSFET LDMOS 30V H-36260-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTFA192001EV4R250XTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

PTFA192001E V4 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTFA192001EV4		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 200W H-36260-2		Original	PDF
PTFA192001EV4R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 30V H-36260-2		Original	PDF
PTFA192001EV4R250		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 200W H-36260-2		Original	PDF
PTFA192001EV4R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-36260-2		Original	PDF
PTFA192001EV4XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-36260-2		Original	PDF

PTFA192001E V4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ptfa192001e Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications	Original	PDF	PTFA192001E PTFA192001F PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2 PTFA192001E V4 LM7805 RO4350 PCS3475CT-ND
Untitled Abstract: No abstract text available Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications	Original	PDF	PTFA192001E PTFA192001F PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2
Untitled Abstract: No abstract text available Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,	Original	PDF	PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF