PTB4200 Search Results

PTB4200 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTB42001X		Philips Semiconductors	Microwave Power Transistor		Original	PDF
PTB42002X		Philips Semiconductors	Microwave Power Transistor		Original	PDF
PTB42003X		Philips Semiconductors	Microwave Power Transistor		Original	PDF

PTB4200 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IEC134 Abstract: PTB42001X PTB42002X Text: 1 - 3 IN T E R N A T IO N A L SbE D • 711DêSfc. - 0 / PTB42001X PTB42002X L P H IL IP S 3 GDMmMM Ô11 ■ P H IN MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide	OCR Scan	PTB42001X PTB42002X GD4L444 PTB42002X FO-41B. IEC134	PDF
IEC134 Abstract: PTB42001X PTB42002X RTC4202X Text: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide	OCR Scan	bL53T31 PTB4200Ã PTB42002X 33-or PTB42001X PTB42002X IEC134 RTC4202X	PDF
PTB42003X Abstract: No abstract text available Text: l'P-33'Ol PTB42003X \_ PHILIPS INTERNATIONAL St.E D • 7110fl2b DD4b44fl Mb? ■ P H I N MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.	OCR Scan	V33-07 PTB42003X 7110fl2b DD4b44Ã easTB42003X T-33-07 711002b DGMb451 PTB42003X	PDF
TRANSISTOR K 314 Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083 Text: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.	OCR Scan	V33-07 PTB42003X 004b44fl TRANSISTOR K 314 MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.	OCR Scan	bbS3T31 PTB42003X	PDF
marking YJ transistors Abstract: IEC134 PTB42001X PTB42002X Text: 1 - 3 3 - 0 / PTB42001X _ PHILIPS INTERNATIONAL SbE D • J[PTB42 711DflSfc, DD4L444 fill ■ P H I N MICROWAVE POWER TRANSISTORS N PN silicon transistors for use in common-base class-B power amplifiers up to 4.2 GHz. Diffused emitter ballasting resistors, interdigltated structure, multicell geometry, localized thick oxide	OCR Scan	PTB42001X PTB42002X PTB42001X PTB42002X Zq-50 marking YJ transistors IEC134	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,	OCR Scan	bb53T31 PTB42001X PTB42002X PTB42001X PTB42002X	PDF
Zn33 Abstract: MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33 Text: « N AMER P H I L I P S / D I S C R E T E bbS3T31 OkE D 00 15115 A M I PTB42003X T - 33 -¿> *7 MICROW AVE POW ER TRA N SISTO R N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.	OCR Scan	PTB42003X wiPTB42003X 0Q1511Ã Zn33 MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33	PDF
Untitled Abstract: No abstract text available Text: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B	OCR Scan	001fc PTB23001X PTB23003X PTB23005X FO-41B PTB32001X PTB32003X PTB32005X	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
OP222 Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X Text: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B	OCR Scan	PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X	PDF

MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram	PDF
FO-229 Abstract: No abstract text available Text: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V\| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18	OCR Scan	E4001R LTE4002S LTE42005S LTE42008R LTE42012R T-100 FO-41B FO-229	PDF