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    PSPICE HIGH FREQUENCY IGBT Search Results

    PSPICE HIGH FREQUENCY IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    PSPICE HIGH FREQUENCY IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT Pspice

    Abstract: No abstract text available
    Text: ITS60F06 ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-4.0 May 1999 The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    Original     		PDF ITS60F06 DS4715-2 DS4715-4 ITS60F06 IGBT Pspice

    Rogowski Coil design

    Abstract: Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski
    Text: Research of Current Distribution in IGBT Modules with Multiple Chips in Parallel M.Bäßler1, M.Münzer1, S.Burkert2 1 eupec GmbH, Max Planck Str.5, D-59581Warstein Germany, Tel: +49-2902-764-2290, Fax: +492902-764-1150, email: [email protected] 2) Otto-von-Guericke-Universität, Universitätsplatz2 Magdeburg Germany


    Original     		PDF D-59581Warstein 2003-Toulouse Rogowski Coil design Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski

    SPICE model for UC3844

    Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
    Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF BR1522/D Aug-2000 r14525 BR1522/D SPICE model for UC3844 UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g30h603

    Abstract: No abstract text available
    Text: IGBT IGW30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW30N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IGW30N60H3 g30h603

    G20H603

    Abstract: No abstract text available
    Text: IGBT IGW20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW20N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IGW20N60H3 G20H603

    G50H603

    Abstract: No abstract text available
    Text: IGBT IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW50N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IGW50N60H3 G50H603

    Untitled

    Abstract: No abstract text available
    Text: IGBT IGP20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGP20N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IGP20N60H3

    Untitled

    Abstract: No abstract text available
    Text: IGBT IGP30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGP30N60H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IGP30N60H3

    pspice high frequency igbt

    Abstract: DS4926
    Text: MITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 Key Parameters The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4926 ITS03F03 ITS03F03 pspice high frequency igbt

    pspice high frequency igbt

    Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
    Text: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS23F06 DS4713-2 DS4713-3 ITS23F06 T0247 pspice high frequency igbt ITS23F06P T0247

    IGBT Pspice

    Abstract: sc 1091
    Text: MITEL ITS30F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 Key Parameters The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4925-1 ITS30F03 DS4925-2 ITS30F03 IGBT Pspice sc 1091

    coxd

    Abstract: No abstract text available
    Text: M ITEL S E M IC O N D U C T O R ITS18F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998, version DS4867-1.3 DS4867-2.2 February 1999 Key Parameters The ITS18F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4867-1 ITS18F03 DS4867-2 ITS18F03 coxd

    pspice high frequency igbt

    Abstract: dc chopper circuit PSPICE Orcad ITS13F06B
    Text: M ITEL S E M IC O N D U C T O R ITS13F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4712-2.2 DS4712-3.2 March 1999 Key Parameters The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS13F06 DS4712-2 DS4712-3 ITS13F06 T0220 pspice high frequency igbt dc chopper circuit PSPICE Orcad ITS13F06B

    1654p

    Abstract: mj 15003 power circuit IGBT Pspice mj 15003 transistor ON MJ 15003
    Text: M ITEL S E M IC O N D U C T O R ITS08F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4716-2.4 DS4716-3.2 March 1999 Key Parameters The ITS08F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4716-2 ITS08F12 DS4716-3 ITS08F12 1654p mj 15003 power circuit IGBT Pspice mj 15003 transistor ON MJ 15003

    ITS25F12

    Abstract: ITS25F12P T0247 pspice high frequency igbt
    Text: M ITEL S E M IC O N D U C T O R ITS25F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4718-2.3 DS4718-3.2 March 1999 Key Parameters The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS25F12 DS4718-2 DS4718-3 ITS25F12 T0247 ITS25F12P T0247 pspice high frequency igbt

    ITS35F12

    Abstract: ITS35F12P T0247
    Text: M ITEL S E M IC O N D U C T O R ITS35F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4719-2.3 DS4719-3.2 March 1999 Key Parameters The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS35F12 DS4719-2 DS4719-3 ITS35F12 T0247 ITS35F12P T0247

    DS4715-2

    Abstract: pspice high frequency igbt ITS60F06P T0247 ITS60F06
    Text: M ITEL S E M IC O N D U C T O R ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-3.2 March 1999 Key Parameters The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS60F06 DS4715-2 DS4715-3 ITS60F06 T0247 pspice high frequency igbt ITS60F06P T0247

    ITS15F12P

    Abstract: T0247
    Text: M ITEL S E M IC O N D U C T O R ITS15F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4717-2.3 DS4717-3.2 March 1999 Key Parameters The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS15F12 DS4717-2 DS4717-3 ITS15F12 T0247 ITS15F12P T0247

    T0252

    Abstract: ITS06F03B ITS06F03G
    Text: M ITEL S E M IC O N D U C T O R ITS06F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 Key Parameters The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS06F03 DS4866-1 DS4866-2 ITS06F03 T0220 T0252 T0252 ITS06F03B ITS06F03G

    Untitled

    Abstract: No abstract text available
    Text: M ITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    OCR Scan     		PDF DS4926 ITS03F03 ITS03F03 DS4926-2

    Untitled

    Abstract: No abstract text available
    Text: MITEL ITS18F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998, version DS4867-1.3 DS4867-2.2 February 1999 The ITS18F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    OCR Scan     		PDF DS4867-1 ITS18F03 DS4867-2 ITS18F03

    DI810

    Abstract: No abstract text available
    Text: M ITEL ITS06F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    OCR Scan     		PDF DS4866-1 ITS06F03 DS4866-2 ITS06F03 DI810

    Untitled

    Abstract: No abstract text available
    Text: ITS30F03 M IT E L Medium Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4925-1 ITS30F03 DS4925-2 ITS30F03