PRODUCED BY PERFECT CRYSTAL DEVICE TECHNOLOGY Search Results

PRODUCED BY PERFECT CRYSTAL DEVICE TECHNOLOGY Result Highlights (5)

Part	Manufacturer	Description
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30

PRODUCED BY PERFECT CRYSTAL DEVICE TECHNOLOGY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8002C Abstract: calibration definition RC oscillator ATCAN90 ATmega3290 ATTINY13 application examples STK501 working of crystal 8mHZ oscillator atmega32 atmega32 programming in c Text: AVR055: Using a 32kHz XTAL for run-time calibration of the internal RC Features 8-bit Microcontrollers • • • • • • • Application Note Calibration using a 32 kHz external crystal Adjustable RC frequency with maximum +/-2% accuracy Tune RC oscillator at any operating voltage and temperature	Original	PDF	AVR055: 32kHz 8002C-AVR-02/06 8002C calibration definition RC oscillator ATCAN90 ATmega3290 ATTINY13 application examples STK501 working of crystal 8mHZ oscillator atmega32 atmega32 programming in c
2SC495 Abstract: 2SA496 2SC496 2SA505 2SC495 transistor 2SA505-0 2sa505-y 2SA496-0 2SA496-Y 2SA505-R Text: 496 2SA 505 A l -/V D y p N P x e ttz/P iifi& h jy y zv iP C T tt ^ S IL IC O N PNP EPITA XIA L TRANSISTOR P C T U n it 35$ PCT I j> -to Produced by Perfect Crystal Device Technology. 134 PROCESS) i n mm 2sa496 2sa505 ELECTRICAL CHARACTERISTICS (Ta = 25 t)	OCR Scan	PDF	2sa496 2sa505 SC496i3y7 2SC495 2SC496 AC46r" 2SA496 2SC496 2SA505 2SC495 transistor 2SA505-0 2sa505-y 2SA496-0 2SA496-Y 2SA505-R
2SA818 Abstract: 2sa818 transistor 2SA818-Y SA818 2sc1628 transistor Produced by Perfect Crystal Device Technology Text: 2 s a 818 2/ u d ypN P E a m t m ^ y v z s p c rm ^ SILICON PIMP T R IP L E D IFFU SE D TRANSISTOR (P C T PR O CESS) Unit in mm Produced by Perfect Crystal Device Technology. 208 2s a 818 EL ECTRICAL C H A R ACTERISTICS CHARA CTE RIS TI C SYMBOL 3 V ? * L^tërWüfÊ	OCR Scan	PDF	2sa818 -10mA -30mA 2SA818 2sa818 transistor 2SA818-Y SA818 2sc1628 transistor Produced by Perfect Crystal Device Technology
Untitled Abstract: No abstract text available Text: EPITAXIAL BASE - lCM UP TO 30A; VCEO UP TO 100V MAIN FEATURES • NPN and PNP types perfect complementary pairs ■ Medium switching speed ■ Medium fy (2 to 20 MHz) ■ High ruggedness THERMAL OXIDE P VAPOX Al GIAS! INTERNAL SCHEMATIC DIAGRAMS Epitaxial Base Technology is a general purpose low	OCR Scan	PDF
2SA950 Abstract: 2SA95 C 2120 Y Produced by Perfect Crystal Device Technology Text: 2SA 950 5/ U D > P N P l£ 9 * î / ? j l ^ h 5 > 5t t 5 > P C T fia ^ IL IC O N PNP EPITAXIAL o Audio Power Amplifier Applications • : hFB=10 0~3 20 B \|R 7" 5» J/ » 7 1a . r 1 W O 6b * f> #1 i +0 2SC2120 t a y ?■i) * ft £ £ t "fo Iff Output Applications	OCR Scan	PDF	2sa950 8S02I20 2S02120 SO-43 228to 2SA950 2SA95 IC/IB-25 C 2120 Y Produced by Perfect Crystal Device Technology
2SC509 Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology Text: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 -r; m 2SC509 i a v 7 V / v f y fri b - -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±	OCR Scan	PDF	2SC509 RH-16 2sa509 -30-SO 00X10Oxlmm 2SC509 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
2SC2088 Abstract: Produced by Perfect Crystal Device Technology 2sc20 Text: S/U D ^N P N It^i'^JU fôh^^S K P C T B Â SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS TENTATIVE O is» «*rnmt Low Noise Audio Amplifier Applications Unit in mm «»Œ -C -Î-o : Vce O = 120V ü -f-íg íM M 'á NF=6dB (M a x . (Rg=101cQ, f = 1 0 H z )	OCR Scan	PDF	10kil, 2SC2088 2SC2088-V Produced by Perfect Crystal Device Technology 2sc20
2SC983 Abstract: transistor 2sc983 2SC983-0 SC983 2SC983 O Produced by Perfect Crystal Device Technology Text: 2SC 983 PCTBìt SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS )i O S * f i / tiSfcfiitiiJjffi o ¡65 o Unit in mm y f y s m &1UAX. I-1 Black and White TV Video Output and High ?n Voltage Switching Applications ¡ S 5 : V c j¡o = 1 5 0 V Si045 a V»9	OCR Scan	PDF	2SC983 120MHz RH-16 30MHz 2SC983 transistor 2sc983 2SC983-0 SC983 2SC983 O Produced by Perfect Crystal Device Technology
2SA467 Abstract: 2SA647 2SC367 2SA amplifier 2sa46 Produced by Perfect Crystal Device Technology Text: ^ U D ^ P N P I f c ^ S /^ l/f ê h ^ itt^ P C T E Â SILICON O o a PNP E P IT A X IA L P C T 2SA PROCESS) À * w i ' * A ' x m n n High Frequency Medium Power Amplifier Applications Medium Power Switching Applications • . T R A N S IS T O R £ V.' : I C = — 4 0 0 m A	OCR Scan	PDF	-400mA 2SC367Â 95MAX. Ta-100Ã 2SA467 2SA647 2SC367 2SA amplifier 2sa46 Produced by Perfect Crystal Device Technology
2SA493 Abstract: 2sc1000 transistor 2sC1000 2SC1000 GR ttl nim 251C Produced by Perfect Crystal Device Technology 2SC1000 bl Text: ' 2 s a 493 g i> \ j3 y p H ^ IL IC O N PNP P x ^ ^ jj> m EPITAXIAL ^ y V TRANSISTOR 7 , /9 { . p c j J 5 % PCT PROCESS) O o iiit Low Noise Àudio Amplifier Applications INDUSTRIAL APPLICATIONS * » Œ T i- V0E0 — Unit in mm 50V N F = 2d B (M a x .) ( Rg = lO k Q , f = 120H z	OCR Scan	PDF	2sa493g 120Hz 2SC1000 2sa493Â 180Hz, 3SA493Â 8SA493 8SA493 2SA493 transistor 2sC1000 2SC1000 GR ttl nim 251C Produced by Perfect Crystal Device Technology 2SC1000 bl
2SC505 Abstract: 2SC506 2SC506-R neon tube 2SC505-R Produced by Perfect Crystal Device Technology 2SC506R Text: 2 s c 505 ^ S IL IC O N NPN TRIPLE DIFFUSED TRANSISTOR PCT PROCESS: 2 s c 506 O BÏ«Œ±g Îffl O ?j% ÄÄE*^ I O ÍI I i ffl INDUSTRIAL APPLICATIONS o High Voltage Amplifier, High Voltage Switching and Neon Tube Driver Applications. Â S Œ t-fo ËXfëfê	OCR Scan	PDF	-sc505 2sc506 2SC505 2SC505 2SC506 2SC506-R neon tube 2SC505-R Produced by Perfect Crystal Device Technology 2SC506R
transistor WL 431 Abstract: 2SC522 2SA510 2SC524 2SA51 2SC522-0 WL 431 2SC52 2SC622 28c5 Text: p c t 2 s c 522 f 7j j £ SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS O 2 s c 524 » « a « * » « « ÌI if I O * ffl INDUSTRIAL APPLICATIONS O o High Frequency Power Amplifier, High Voltage Switching and Regulator Application*. Unit In on 2SA510, 2 S A 5 1 2 t 3 y / M y # P ( c í t ! l í t .	OCR Scan	PDF	2SA510, 2SA512 2SC522 2SC524 2SA510 2SA512 100mmX100n 50mmX50n 25nunx25inmXgmmA transistor WL 431 2SA51 2SC522-0 WL 431 2SC52 2SC622 28c5
2SA509 Abstract: 2SC509 2SC509-Y RH-16 2sa509 transistor 2SA509 A Produced by Perfect Crystal Device Technology Text: 2/UD>NPNXti^5/?JHBS5>^^ PCTÄÄ SILICON O NPN EPITAXIAL (P C T Audio Power Amplifier Applications Switching Applications : VcE( s a t ) = 0.5V (Max.) « a i t S ^ ^ Ä V ' : hJTj = 7 0—2 4 0 B fozfy -y'} s 'S 9 K l t ï t - f c ZSA509O 1 Watt Amplifier Applications	OCR Scan	PDF	2SA509 2SA509 2SC509 2SC509-Y RH-16 2sa509 transistor 2SA509 A Produced by Perfect Crystal Device Technology
2SA594 Abstract: FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178 Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA 594 PROCESSJj ii ft X * ffl INDUSTRIAL APPLICATIONS o o High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications Unit in mm : 3 u- ?»S ft i >1 %W 5 94 ¿3X7"! fT = 2,00MHz ( T y p .)	OCR Scan	PDF	2sa594 200MHz 2SC594 2SA594 FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178

2SA500 Abstract: 2SA499 2SC400 2SC979 2sc97 I100N Produced by Perfect Crystal Device Technology 2SA500-O Text: 2Sa49 ^ U 3 y p N P x ^ 5 > ^ P i b m ^ y V 7 ,5 > p c T m SILICON PNP EPITAXIAL TRANSISTOR (P C T PROCESS 2SA 50 O ¡iJS&ifflgffl o asmet* J •> I II I 1 O High Frequency Amplifier Applications ° High Speed S w itching A p p l i cations • BSitffr^o ; VCB 0 = -50V(Min.) 2SA499	OCR Scan	PDF	2sa499 2sa500 2SA500 250MHZ 400ne 2SC979 2SC400 2SC400 2sc97 I100N Produced by Perfect Crystal Device Technology 2SA500-O
2SC1815 Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL	OCR Scan	PDF	2sc1815 2SC1815 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
2SC980 Abstract: 2SC980A 2SC980-G 2SC980A-G 2sc9 YTFA Produced by Perfect Crystal Device Technology Text: 2s c 980g 2 s c 980A g 5 /U 3 yN P N l£9*5/?ib B hÿyz?Z 9 PC T J5 £ SILICO N NPN EPITAXIAL T RA N SIST O R (PCT PRO CESS O O o High Frequency Amplifier Applications. ° High Speed Switching Applications. IN D U ST R IA L APPLICATIO NS Unit in mm : h V / ÿ s/a	OCR Scan	PDF	250MHz 2sc980g 2sc980ag 2SC980Â 2SC980JÂ 2SC980AÂ -30-EO 2SC980 2SC980A 2SC980-G 2SC980A-G 2sc9 YTFA Produced by Perfect Crystal Device Technology
2SC941 Abstract: 2SC9410 2SC941-0 2SC941-R 2SC941-Y Produced by Perfect Crystal Device Technology Text: 2 / U D > N P N X t :^ ^ 3 / ? J l/ » h 5 > ^ 9 P C T ^ ÌE 2 s c 941 u Am xm m m O AM \| O AM , ^ IL IC O N NPN EPITAXIAL TRANSISTOR (PCT PROCESS) High Frequency Amplifier, AM RF Amplifier and AM Frequency Converter Applications. NF = 3.5dB (Max.) (f=lMHz)	OCR Scan	PDF	Ta-25 2SC941 2SC9410 2SC941-0 2SC941-R 2SC941-Y Produced by Perfect Crystal Device Technology
2SC509 Abstract: 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S Text: 509 g 2SA 2 5 5 9 / U D ^ P N P Ilf ? ^ ? J W B h > y ^ P C T S Ä ^SILIC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) O •* -i y T > O A u d io P o w e r A m p l i f i e r A p p l i c a t i o n s o S w itch in g A p p lic a tio n s INDUSTRIAL APPLICATIONS	OCR Scan	PDF	2sa509g 2SC509Â 2SC509 100X100X1MAÃ 2SC509 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S
2SC1380 Abstract: transistor c1380 2SC13 C1380 2SC1380A transistor qz 2SC1380A-BL z13x Produced by Perfect Crystal Device Technology LTSTS Text: SILICON O O o o NPN EPITAXIAL TRANSISTOR PCT PROCESS I It I 1 ffl iftft&ittHA & £ ! * £ * # « • £ (26C1380A) High Frequency Amplifier Applications INDUSTRIAL APPLICATIONS Low Noise Amplifier Applications (2SC1380A) «StŒtt : U n i t i n mm 0&8MAX.	OCR Scan	PDF	2SC1380A) 2SC1380A 100Hz) -I100M 2SC1380 transistor c1380 2SC13 C1380 2SC1380A transistor qz 2SC1380A-BL z13x Produced by Perfect Crystal Device Technology LTSTS
ultrasonic piezo speaker Abstract: piezoelectric crystals disc Piezoelectric crystal piezoelectric pressure transducer micro Piezo electric Microphones piezoelectric transducer ceramic Piezo Ceramic Microphones piezoelectric pressure charge amplifier ultrasonic piezoelectric water transmission disc Piezoelectric Sensor Text: PIEZOELECTRIC TRANSDUCERS DISTRIBUTED MODE ACTUATORS Audio Education Series Vol. 6 PIEZOELECTRIC TRANSDUCERS Distributed Mode Actuators The Audio Education Series eBooks are provided by the Audio Products Division of National Semiconductor Analog Products Group	OCR Scan	PDF
2sc995 Abstract: Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology Text: 2 s c 995 I 2/ U L 2 s c 996 D > N P N E M Ì s il ic o n n p n t r ip l e * 7 - - r ^ ^ÿkmtatim o Color TV V ideo Output A p p l ications I B E T t , • ^ l' ? fi ; K 5 > ì; ^ 5 7 P C T 7d ì W U n i t i n mm o • 5Ì Ì^ DIFFUSED TRANSISTOR (PCT PROCESS	OCR Scan	PDF	2sc995 2sc996 100MHz 2SC995 Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology
2SC1173 Abstract: Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 2SA473 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y Text: ^ 2 s c 1173 i/U D > N P N X ^ á F 2 /? ;U h ^ > 5 ;^ P C T S a : ^ I L IC O N NPN EPITAXIAL o « * « « « o P o w e r Ampl i f i e r A p p l i cations o Output Stage Application of Car Radio and Stereo TRANSISTOR 2 B A 4 73 <n =. V -7 V ^ y 9 V X-	OCR Scan	PDF	2sc1173 2SA473 T0-220AB 10AIA ftAC75 0/25j 100x100x2ml 50xs0x2mm 2SC1173 Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y
2SA510 Abstract: transistor 2sa5100 2SC510 2SA512 2SC51 2SA510-R 2SA512-R 2SC512 Produced by Perfect Crystal Device Technology 2sc5 Text: 2SA 5 2 / U D > P N P I t : ^ 2 / > » j W B h 5 > y 7 >^ P C T Ä Ä SILICON 2S a 5 PNP EPITAXIAL TRANSISTOR (PC T PROCESS) o O s iS flt£E * -i i O if i * 1 INDUSTRIAL APPLICATIONS o High Frequency Power Amplifier, High Voltage Switching and Regulator Applications	OCR Scan	PDF	2SC510, 2SA510) PC-800nW 2SC510 2SC512 sa510 2SA510 transistor 2sa5100 2SA512 2SC51 2SA510-R 2SA512-R 2SC512 Produced by Perfect Crystal Device Technology 2sc5

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PRODUCED BY PERFECT CRYSTAL DEVICE TECHNOLOGY Search Results

PRODUCED BY PERFECT CRYSTAL DEVICE TECHNOLOGY Result Highlights (5)

PRODUCED BY PERFECT CRYSTAL DEVICE TECHNOLOGY Datasheets Context Search

8002C

2SC495

2SA818

Untitled

2SA950

2SC509

2SC2088

2SC983

2SA467

2SA493

2SC505

transistor WL 431

2SA509

2SA594

2SA500

2SC1815

2SC980

2SC941

2SC509

2SC1380

ultrasonic piezo speaker

2sc995

2SC1173

2SA510