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    PR SMA PACKAGE Search Results

    PR SMA PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    PR SMA PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RGF10A

    Abstract: RGF10M RGP10A RGP10M no51
    Text: G S E M I C O N D U C T O R RGF10A THRU RGF10M C PR FAST RECOVERY RECTIFIER Reverse Voltage: 50 to 1000 Volts Forward Current:1.0Ampere SMA DO-214AC FEATURES GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction For Surface Mount Applications, Easy to pick and place


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    PDF RGF10A RGF10M DO-214AC) DO-214AC MIL-STD-750, 25Vdc RGF10M RGP10A RGP10M no51

    Untitled

    Abstract: No abstract text available
    Text: Connectorized Splitter/Combiner 5 Way Y AR IN IM EL PR Inline Splitter/Combiner Networks Model 4ASSA0504 Features Electrical Specifications • 800 - 1000 MHz • Compact Package • High Power Handling • Low Insertion Loss • Easy Mounting • Cost Effective Networks


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    PDF 4ASSA0504 4ASSA0506

    marking c14

    Abstract: CMMSH1-40 marking code c14 pr sma package pr sma marking
    Text: Central LIM E PR RY A N I CMMSH1-40 Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 1.0 AMP, 40 VOLTS DESCRIPTION: The Central Semiconductor CMMSH1-40 is a high current Schottky rectifier in a SOD-123F surface mount package suitable for design applications such


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    PDF NACMMSH1-40 CMMSH1-40 OD-123F 100mA 29-January CMMSH1-40 marking c14 marking code c14 pr sma package pr sma marking

    BYD24G

    Abstract: BYG24D BYG24G
    Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time


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    PDF BYG24D BYG24J J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 BYD24G BYG24G

    BYG24D

    Abstract: BYG24G
    Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time


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    PDF BYG24D BYG24J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG24G

    Untitled

    Abstract: No abstract text available
    Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time


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    PDF BYG21K BYG21M J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05

    BYG24D

    Abstract: BYG24J JESD22-B102D J-STD-002B 175KW BYG24G
    Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time


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    PDF BYG24D BYG24J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG24J JESD22-B102D J-STD-002B 175KW BYG24G

    Untitled

    Abstract: No abstract text available
    Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time


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    PDF BYG21K BYG21M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05

    BYG24D

    Abstract: BYG24G
    Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time


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    PDF BYG24D BYG24J DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 BYG24G

    BYG22A, DO214AC

    Abstract: No abstract text available
    Text: BYG22A thru BYG22D Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic


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    PDF BYG22A BYG22D DO-214AC J-STD-020C 2002/95/EC 2002/96/EC 08-Apr-05 BYG22A, DO214AC

    BYD20G

    Abstract: byd20
    Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time


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    PDF BYG20D BYG20J J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 BYD20G byd20

    Untitled

    Abstract: No abstract text available
    Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability


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    PDF BYG10D BYG10Y J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05

    vishay MARKING UM SMA

    Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
    Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability


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    PDF BYG10D BYG10Y DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 vishay MARKING UM SMA smd code marking e3 BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B

    BYG20J

    Abstract: BYD20G vishay smd diode code marking BYG20D BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B
    Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time


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    PDF BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG20J BYD20G vishay smd diode code marking BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B

    BYG21M

    Abstract: BYG21K JESD22-B102D J-STD-002B BYG21KH
    Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time


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    PDF BYG21K BYG21M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG21M BYG21K JESD22-B102D J-STD-002B BYG21KH

    BYG10M

    Abstract: BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
    Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability


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    PDF BYG10D BYG10Y DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG10M BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time


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    PDF BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05

    byg20g

    Abstract: BYG20D BYG20J JESD22-B102D J-STD-002B diode BYG20g smd diode byg20g
    Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time


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    PDF BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 byg20g BYG20J JESD22-B102D J-STD-002B diode BYG20g smd diode byg20g

    MARKING code 14 DO-214AC

    Abstract: smd diode byg20g DIODE MARKING BYG20G
    Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time


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    PDF BYG20D BYG20J DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 MARKING code 14 DO-214AC smd diode byg20g DIODE MARKING BYG20G

    BYG10J

    Abstract: No abstract text available
    Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability


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    PDF BYG10D BYG10Y DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 BYG10J

    byg21m

    Abstract: No abstract text available
    Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time


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    PDF BYG21K BYG21M DO-214AC J-STD-020, 2002/95/EC 2002/96/EC DO-21s 08-Apr-05 byg21m

    vishay MARKING UM SMA

    Abstract: BYG24D BYG24J JESD22-B102 J-STD-002 BYG24G
    Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time


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    PDF BYG24D BYG24J J-STD-020, DO-214AC 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 18-Jul-08 vishay MARKING UM SMA BYG24J JESD22-B102 BYG24G

    BYG21M

    Abstract: vishay MARKING UM SMA BYG21K JESD22-B102 J-STD-002
    Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time


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    PDF BYG21K BYG21M J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 18-Jul-08 BYG21M vishay MARKING UM SMA BYG21K JESD22-B102 J-STD-002

    HFBR-1204

    Abstract: la 4202 HFBR1204 HFBR-4202
    Text: HIGH EFFICIENCY FIBER OPTIC TRANSMITTER HFBR-1204 Features • OPTICAL POWER COUPLED INTO 100/140 Mm FIBER CABLE —9.8 dBm Guaranteed at 25° C —7.4 dBm Typical • FACTORY ALIGNED OPTICS • RUGGED MINIATURE PACKAGE • COMPATIBLE WITH SMA CONNECTORS Description


    OCR Scan
    PDF HFBR-1204 HFBR-1204 la 4202 HFBR1204 HFBR-4202