week code SILICONIX
Abstract: No abstract text available
Text: Part Marking Information www.vishay.com Vishay Siliconix DEVICES: PowerPAK SO-8 PowerPAK SO-8L PowerPAK 1212-8 PowerPAIR® 6 x 3.7 PowerPAK 1212-8S PowerPAIR 6 x 5 PowerPAIR 3 x 3 Single and Dual 7401 LL TYWF 7401 = Example Base Part Number or marking codea
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1212-8S
25-Jun-12
week code SILICONIX
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Part Marking Information
Abstract: vishay siliconix code marking
Text: Part Marking Information www.vishay.com Vishay Siliconix Devices: PowerPAK SO-8, PowerPAK SO-8L PowerPAK 1212-8, PowerPAK 1212-8S, PowerPAK 1212-8W PowerPAIR® 6 x 3.7, PowerPAIR 6 x 5, PowerPAIR 3 x 3 Single and Dual 7401 LL TYWF 7401 = Example Base Part Number or marking code a
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1212-8S,
212-8W
08-Jun-15
Part Marking Information
vishay siliconix code marking
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Untitled
Abstract: No abstract text available
Text: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0111 at VGS = 10 V 30 a 0.0138 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: For definitions of
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SiZ342DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ON TSOP-6 MARKING 6L
Abstract: SOT-923 PowerPAIR 3 x 3 part marking
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note 826 Recommended Minimum Pad Patterns with Outline Drawing Access for Vishay Siliconix MOSFETs By Kandarp Pandya This web-smart document offers the following features: a. Click on any package type listed under the “Package” column to go to the corresponding minimum recommended pad pattern
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TSSOP-16
07-Feb-12
ON TSOP-6 MARKING 6L
SOT-923
PowerPAIR 3 x 3 part marking
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Untitled
Abstract: No abstract text available
Text: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0115 at VGS = 10 V 30 a 0.0153 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: for definitions of
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SiZ342DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Package Application Note AN826 Recommended Minimum Pad Patterns with Outline Drawing Access for Vishay Siliconix MOSFETs By Kandarp Pandya This web-smart document offers the following features: a. Click on any package type listed under the “Package” column to go to the corresponding minimum recommended pad pattern
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AN826
15-Apr-15
TSSOP-16
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.)
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SiZ300DT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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057 98B
Abstract: No abstract text available
Text: SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V
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SiZ300DT
2002/95/EC
11-Mar-11
057 98B
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11
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SiZ300DT
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () MAX. ID (A) 0.0095 at VGS = 10 V 30a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40a 0.0070 at VGS = 4.5 V
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SiZ340DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.)
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SiZ300DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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siz300dt
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.)
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SiZ300DT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11
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SiZ300DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ702DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) () ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21
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SiZ702DT
2002/95/EC
SiZ702DT-T1-GE3
11-Mar-11
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234B
Abstract: No abstract text available
Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V
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SiZ790DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
234B
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V
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SiZ790DT
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V
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SiZ340DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
SiZ730DT-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ728DT
2002/95/EC
SiZ728DT-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a
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SiZ904DT
2002/95/EC
SiZ904DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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SiZ900DT
2002/95/EC
SiZ900DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)
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SiZ700DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ704DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0240 at VGS = 10 V 0.0300 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.0170 at VGS = 4.5 V 12a 12a 16a 16a Qg (Typ.)
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SiZ704DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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