MLP832
Abstract: ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1
Text: ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTDA1M832
MLP832
ZXTDA1M832
ZXTDA1M832TA
ZXTDA1M832TC
IC 630
marking DA1
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Untitled
Abstract: No abstract text available
Text: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674
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2SB1732
2SB1709
SC-96)
2SB1732
2SD2702,
2SD2674
-500mA/
-25mA)
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Untitled
Abstract: No abstract text available
Text: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709
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2SD2702
2SD2674
SC-96)
2SD2702
2SB1732,
2SB1709
500mA/25mA)
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MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
0001M10
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MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
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Untitled
Abstract: No abstract text available
Text: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)
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2SB1697
SC-62)
OT-89>
2SD2661
-50mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)
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2SD2661
SC-62)
OT-89>
2SB1697
A/50mA)
R1102A
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TS16949
Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to
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ZXTP25012EFH
-65mV
ZXTN25012EFH
D-81541
TS16949
ZXTN25012EFH
ZXTP25012EFH
ZXTP25012EFHTA
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zxtn25012efh
Abstract: transistor 1.25W
Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
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ZXTN25012EFH
zxtn25012efh
transistor 1.25W
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MLP832
Abstract: ZXTD1M832 ZXTD1M832TA ZXTD1M832TC
Text: ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer
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ZXTD1M832
MLP832
ZXTD1M832
ZXTD1M832TA
ZXTD1M832TC
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27mhz rf amplifier
Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf amplifier
27mhz rf ic
27mhz
HF SSB APPLICATIONS
27mhz rf amplifier NPN transistor
HF power amplifier
12v class d amplifier 20W
27mhz transistor
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27mhz rf ic
Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf ic
27mhz rf amplifier NPN transistor
27mhz rf amplifier
12v class d amplifier 20W
27mhz transistor
27MHz power amplifier
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pHEMT transistor 360
Abstract: powerband
Text: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across
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T1P2701012-SP
500MHz
10watts
15Watts
500MHz-2
pHEMT transistor 360
powerband
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2sc2166
Abstract: No abstract text available
Text: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.
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2SC2166
27MHz,
CH2SC2166
27MHz
2sc2166
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Untitled
Abstract: No abstract text available
Text: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)
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2SD2537
SC-62)
OT-89>
500mA/10mA)
R1102A
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FMMT717
Abstract: FMMT717QTA transistor marking 72m MARKING CODE 717
Text: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON POWER SWITCHING TRANSISTOR IN SOT23 PACKAGE Features Mechanical Data • • • • • • • • • • • • • • • • 625mW Power dissipation -2.5A Continuous collector current
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FMMT717
625mW
-17mV
-100mA.
FMMT617
AEC-Q101
J-STD-020
FMMT717
DS33116
FMMT717QTA
transistor marking 72m
MARKING CODE 717
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor 25V, 1.2A 2SD2537 Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) Dimensions (Unit : mm) 2SD2537 2.5 4.0 Absolute maximum ratings (Ta=25°C)
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2SD2537
500mA/10mA)
SC-62
R1120A
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2SD2537
Abstract: T100
Text: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zDimensions (Unit : mm) 2SD2537 2.5 4.0 zAbsolute maximum ratings (Ta=25°C)
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2SD2537
500mA/10mA)
SC-62
2SD2537
T100
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BF 235
Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZTX1147A
BF 235
plc em 235
ZTX1147
ZTX1147A
DSA003763
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2SC2312
Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating
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2SC2312
27MHz
27MHz,
-30dB
-62dB
-65dB.
2SC2312
100mA
27mhz transistor
27mhz rf ic
A7 NPN EPITAXIAL
A7 transistor
transistor A7
RF POWER TRANSISTOR
npn epitaxial planar high voltage transistor
FET Transistor Structure
mitsubishi vcb
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27mhz rf ic
Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,
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2SC1944
2SC1944
27MHz,
T0-220
27MHz
27mhz rf ic
T30 transistor
27mhz transistor
27mhz rf amplifier
T-30
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYPE DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in H F band mobile radio applications. FEATURES • High power gain: Gpe > 1 4 d B • @f = 27M H z, V cc = 12V , P0 = 13W
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2SC3133
2SC3133
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TRANSISTOR C107
Abstract: transistor c107 m c107 transistor 2144S 2SD2144S 96-232-C107 IC-2700
Text: I High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •E xternal dimensions (Units: mm) •F eatures 1) High DC current gain. hFE = 1200 (Typ) 2) 2.9±0.2 1.1 High emitter-base voltage, Vebo = 12V 3) 2SD2114K +0.2 - 0.1 0.8± 0.1 (Min.)
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2SD2114K
2SD2114K/2SD2144S
500mA/20A)
SC-59
2SD2144S
SC-72
TRANSISTOR C107
transistor c107 m
c107 transistor
2144S
2SD2144S
96-232-C107
IC-2700
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2SD2227
Abstract: 2SD2537 2SD2171S 2SD2226K 2SD2227S 2SD2351 T100 T106 T146 marking bj
Text: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors I Medium Power Transistor 25V, 1.2A 2SD2537 / 2SD2171S •Features •Absolute maximum ratings (Ta=25'C) 1 ) High DC current gain. 2 ) High emitter-base voltage. (Vcbo= 12V Min.) 3 ) Low Vce(ml). (Max, 0.3V at lc/le=500/10mA)
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2SD2537
2SD2171S
2SD2351
2SD2226K
2SD2227S
2SD2171S
500/10mA)
2SD2227
2SD2227S
T100
T106
T146
marking bj
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