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    POWER TRANSISTOR IN 3055 Search Results

    POWER TRANSISTOR IN 3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR IN 3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jfs series

    Abstract: lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5
    Text: INSTRUCTION MANUAL JFS0500 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 LAMBDA ELECTRONICS INCOPORATED 3055 DEL SOL BOULEVARD , SAN DIEGO , CA 92154-3474 • TEL: 619-575-4400 • FAX: 619-575-7185 IMJFS05 – REV D


    Original     		PDF JFS0500 IMJFS05 JFS0500: jfs series lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5

    jfs series

    Abstract: transistor 3055 1000w inverter power transistor IN 3055 3055 transistor 1000W TRANSISTOR jfs100048 power transistor 3055 power inverters 500w JFS1000-24
    Text: INSTRUCTION MANUAL JFS1000 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 P/N: IMJFS10 Rev. D DATE: July 2005 JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS1000: I. MAXIMUM RATINGS


    Original     		PDF JFS1000 IMJFS10 JFS1000: IMJFS10 jfs series transistor 3055 1000w inverter power transistor IN 3055 3055 transistor 1000W TRANSISTOR jfs100048 power transistor 3055 power inverters 500w JFS1000-24

    jfs series

    Abstract: JFS2000-24 power transistor IN 3055 power transistor 3055 transistor 3055 IEC1000-3-2 IEC1000-4-5 JFS2000-48 LAMBDA power supply 1275 1500w 220VAC to 24VDC power supply
    Text: INSTRUCTION MANUAL JFS2000 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 P/N: IMJFS20 Rev. D DATE: July 2005 JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS2000: I. MAXIMUM RATINGS


    Original     		PDF JFS2000 IMJFS20 JFS2000: IMJFS20 jfs series JFS2000-24 power transistor IN 3055 power transistor 3055 transistor 3055 IEC1000-3-2 IEC1000-4-5 JFS2000-48 LAMBDA power supply 1275 1500w 220VAC to 24VDC power supply

    jfs series

    Abstract: transistor 3055 JFS-1500-48 JFS1500-48 3055 transistor LAMBDA power supply 1275 1500w power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS1500-24
    Text: INSTRUCTION MANUAL JFS1500 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 P/N: IMJFS15 Rev. D DATE: July 2005 JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS1500: I. MAXIMUM RATINGS *


    Original     		PDF JFS1500 IMJFS15 JFS1500: JFS1500-24 JFS1500-48 jfs series transistor 3055 JFS-1500-48 JFS1500-48 3055 transistor LAMBDA power supply 1275 1500w power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS1500-24

    jfs series

    Abstract: JFS0750-48 power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS0750-24 DARLINGTON MANUAL lambda overvoltage protection lambda transistor labor netzteil
    Text: INSTRUCTION MANUAL JFS0750 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 IMJFS07 – REV D JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS0750: I. MAXIMUM RATINGS SPECIFICATION


    Original     		PDF JFS0750 IMJFS07 JFS0750: jfs series JFS0750-48 power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS0750-24 DARLINGTON MANUAL lambda overvoltage protection lambda transistor labor netzteil

    3055t

    Abstract: MJE2955T MJE305 MJE3055T 75W PNP
    Text: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 Minimum at IC = 4.0A.


    Original     		PDF MJE2955T, 3055T 400mA. 3055t MJE2955T MJE305 MJE3055T 75W PNP

    transistor 3055

    Abstract: DIODE IN 3055 TR 3055 6N135 6N136 VDE0884
    Text: 6N135-3054/6N136-3055 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES • • • • NC 1 8 C VCC B (VB) A 2 7 C 3 6 C (VO) NC 4 5 E (GND) i179081 DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with


    Original     		PDF 6N135-3054/6N136-3055 i179081 6N135 6N136 08-Apr-05 transistor 3055 DIODE IN 3055 TR 3055 VDE0884

    transistor 3055

    Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
    Text: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.


    OCR Scan     		PDF 62702-U Q62901-B 45toi< 200mA 100mA -10mA transistor 3055 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 -SOT186 BUK445-60A/B BUK445

    Untitled

    Abstract: No abstract text available
    Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching


    OCR Scan     		PDF TIP2955 TIP3055 TIP3055 O-218 TIP2955. P2955/TIP3055 O-218 OT-93)

    mj2955

    Abstract: No abstract text available
    Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series


    OCR Scan     		PDF 2N3055 MJ2955 2N3055 MJ2955. SC08820 SC08830 P003F mj2955

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


    OCR Scan     		PDF TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688

    TP3055E

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Advance Inform ation TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced " E " series o f TM O S p o w e r MOSFETs is designed to w ith s ta n d hig h ene rg y in th e avalanche and c o m m u ta tio n m odes. These n ew ene rg y e fficie n t devices


    OCR Scan     		PDF MTP3055E TP3055E

    Motorola transistors MJE3055

    Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •


    OCR Scan     		PDF MJE2955 MJE3055 1Ol50Â MJD6036 MJD3039 Motorola transistors MJE3055 Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor

    transistor mj 3055

    Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
    Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •


    OCR Scan     		PDF D2955/D MJE2955 MJE3055 transistor mj 3055 d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data

    2955T

    Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes


    OCR Scan     		PDF 2955T* 3055T* MJE3055T, MJE2955T MJE2955T 2955T JE3055T 3055t JE3055 je 3055t JE2955T AN415A

    J2955

    Abstract: j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA M J2955 See 2N 3055 M J2955A (See 2N 3055A ) M edium -Pow er Com plem entary Silicon Transistors M J2500 . . . for use as output devices in complementary general purpose amplifier applica­


    OCR Scan     		PDF MJ2500/D J2955 J2955A J2500 J2501* J3000 J3001* O-204AA J2955 j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor

    3055 transistor

    Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
    Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3

    2n3055 motorola

    Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc


    OCR Scan     		PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055

    3055vl

    Abstract: Motorola 3055vl 3055vl motorola
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This


    OCR Scan     		PDF MTD3055VL/D 3055VL 3055vl Motorola 3055vl 3055vl motorola

    2SC3055

    Abstract: E3 37497 2sc3055 transistor high power switching transistor
    Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*


    OCR Scan     		PDF 2SC3055 2SC3055 laC3055 374CJ7LB T-33-07 E3 37497 2sc3055 transistor high power switching transistor

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


    OCR Scan     		PDF E3B33c 000DQ5M lo-32 8 pin ic 3773

    3055

    Abstract: 3055 npn A 3055 transistor 3055
    Text: 4 S i» 2 N 3055 'V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendungen: Schalter hoher Leistung und NF-Endstufen Applications: High power switching and AF-output stages Besondere M erkm ale: Features:


    OCR Scan     		PDF