IR2117 APPLICATION NOTE
Abstract: IR2117 . igbt driver IR2117
Text: Data Sheet No. PD60146 Rev M IR2117/IR2118 S SINGLE CHANNEL DRIVER Features • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V
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PD60146
IR2117/IR2118
IR2117)
IR2118)
5M-1994.
MS-012AA.
IR2117 APPLICATION NOTE
IR2117
. igbt driver IR2117
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IR2127
Abstract: power supply ax 322
Text: Data Sheet No. PD60143J IR2127/IR2128 IR21271/IR21281 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 20V IR2127/
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PD60143J
IR2127/IR2128
IR21271/IR21281
IR2127/
IR2128)
IR21271/IR21281)
IR2127/IR21271)
IR2128/IR21281)
IR2127/IR2128/IR21271/IR21281
power400
IR2127
power supply ax 322
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ic 4532
Abstract: PS4530 PS4531 PS4532 74H4351
Text: PS4530/PS4531/PS4532
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PS4530/PS4531/PS4532
PS4530CWP
PS4530CAP
PS4530EWP
PS4530EAP
PS4531CWP
PS4531CAP
PS4531EWP
PS4531EAP
PS4532EWP
ic 4532
PS4530
PS4531
PS4532
74H4351
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PS4530
Abstract: PS4531 PS4532 coma
Text: PS4530/PS4531/PS4532
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PS4530/PS4531/PS4532
PS4530CWP
PS4530CAP
PS4530EWP
PS4530EAP
PS4531CWP
PS4531CAP
PS4531EWP
PS4531EAP
PS4532EWP
PS4530
PS4531
PS4532
coma
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Untitled
Abstract: No abstract text available
Text: PS4530/PS4531/PS4532
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PS4530/PS4531/PS4532
MAX4530/MAX4531/MAX4532
PS4530CWP
PS4530CAP
PS4530EWP
PS4530EAP
PS4531CWP
PS4531CAP
PS4531EWP
PS4531EAP
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Untitled
Abstract: No abstract text available
Text: 19-0225; Rev 3; 9/97 IT K ATION EVALU BLE AVAILA 5 V /3 .3 V /3 V or Adjust a ble , H igh-Effic ie nc y, Low I Q , St e p-Dow n DC-DC Cont rolle rs _Applic a t ions 5V-to-3.3V Green PC Applications High-Efficiency Step-Down Regulation
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MAX649)
MAX651)
MAX652)
300kHz
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Untitled
Abstract: No abstract text available
Text: PI74FCT322501T PI74FCT322Q501T
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PI74FCT322501T
PI74FCT322Q501T
36-Bit
100-pin
PI74FCT322Q501T
PS7085B
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SL379
Abstract: TRANSISTOR tip 127 HP32 Ds2448 DS3875 SL7953
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3875 - 1.2 SL379 SUBSCRIBER LINE INTERFACE CIRCUIT VREG BGND VBAT QBAT 2 9 1 8 BX RINGX AX(TIPX) DB 31 30 BGND 1 32 VREG 2 HPB QBAT 9 25 HPA CHS 10
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DS3875
SL379
SL379
SL7953
DS2448-1
TRANSISTOR tip 127
HP32
Ds2448
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Untitled
Abstract: No abstract text available
Text: 19-1075; Rev 0; 6/96 NUAL KIT MA ATION SHEET A EVALU T A D WS FOLLO 5 V /3 .3 V or Adjust a ble , 1 0 0 % Dut y-Cyc le , H igh-Effic ie nc y, St e p-Dow n DC-DC Cont rolle rs _Applic a t ions PCMCIA Power Supplies Personal Digital Assistants
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101mm
004in.
1-0041A
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time
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32-Bit
322160S/GS-60/-70
16-Bit)
023Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 32200S/L-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • • 1 048 576 w ords by 9-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e -60 version
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32200S/L-60/-70/-80
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514400AJ
Abstract: HYM32200S 32200S-70
Text: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 32200S/L-60/-70/-80 Advanced Information • • • • • • • • • • • • • • 1 048 576 words by 9-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time
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32200S/L-60/-70/-80
32200S/L-60/-70/-80
514400AJ
HYM32200S
32200S-70
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Untitled
Abstract: No abstract text available
Text: HITACHI PF0147 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-322D Z 5th. Edition June, 1996 Application For G SM class4 890 to 915M H z. Features • 2stage am plifier
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PF0147
ADE-208-322D
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Untitled
Abstract: No abstract text available
Text: M M O T O R O L A M ilitary 5 4 LS3 6 5 A Hex Buffer, Common Enable, 3-State ELECTRICALLY TESTED PER: MIL-M-38510/32201 This device is a high-speed hex b u ffe r w ith 3-state o utp uts. It is o rg a nized as a sin g le 6 -bit or 2 -bit/4-bit, w ith in ve rtin g o r n o n -in v e rtin g data
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MIL-M-38510/32201
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38510 32204
Abstract: No abstract text available
Text: g MOTOROLA Hex In v erte r, 4-B it and 2-B it, 3 -S ta te ELECTRICALLY TESTED PER: M IL-M - 38510/32204 T his device is a hig h -sp eed h ex b u ffer w ith 3-state outputs. It is o rg a nized as a sin g le 6-b it o r 2 -b it/4 -b it, w ith in v e rtin g o r n o n -in v e rtin g data
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322F-M
Abstract: No abstract text available
Text: SN74AHCT1G14 SINGLE SCHMITT-TRIGGER INVERTER GATE S C LS 322F-M A R C H 1996-R E V IS ED FEBRUARY 1998 DBV PACKAGE TOP VIEW Inputs Are TTL-Voltage Compatible EP/C (Enhanced-Performance Implanted CMOS) Process High Latch-Up Immunity Exceeds 250 mA Per JESD17
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SN74AHCT1G14
322F-M
1996-R
JESD17
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32200R8 Product Preview 2M x 32 Bit Dynamic Random Access Memory Card The M C M 32200R 8 is a 5 V D RAM M em ory C ard organized as tw o banks of 1,048,576 x 32 bits. T h e card is a JE D E C -stan d a rd Type 1, 88-pin D RAM card, co n
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MCM32200R8
32200R
88-pin
5L4400A
MCM32200R860
MCM32200R870
MCM32200R8
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Untitled
Abstract: No abstract text available
Text: IDT74FST3245 IDT74FST32245 PRELIMINARY OCTAL BUS SWITCH H h teg iated D e v iz e T e c h n o lo g y , l i e . FEATURES: The FST3245/32245 belong to IDT's family of Bus switches. Bus switch devices perform the function of connecting or isolating two ports without providing any inherent current sink
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IDT74FST3245
IDT74FST32245
FST32xxx
MIL-STD-883,
200pF,
FCT245/FCT245T
FST3245/32245
IDT74FST3245,
P20-1)
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IR2126
Abstract: 104X111 1R2125 IR2121 MP150
Text: International i- w j^ i n c u u 1 u Data Sheet No. PD-6.018D 1 0 ^ 4 ir v z . i r i O H £ * i CURRENT LIMITING LOW SIDE DRIVER Features • r lr i\ /o c i in n h / r a n n o fr n m Product Summary 1 9 tn 1 ft\/ — v,w ',Mr r ,7 ,w ,» w ■— — ■w■ U n d e rvo lta g e lo cko u t
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IR2121
CA80245
RH89BB,
IR2126
104X111
1R2125
MP150
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Untitled
Abstract: No abstract text available
Text: f j j P E R IC O M PI49FCT807T PI49FCT2807T Fast CMOS Clock Driver Product Features: • G uaranteed low skew: 0.25 ns • Low input capacitance • M inim um duty cycle distortion • 1:10 fanout • High speed: 3.5 ns propagation delay • T T L input and CM O S output com patible
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PI49FCT807T
PI49FCT2807T
PI49FC
2807T
PS7008A
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HA1322
Abstract: hitachi ha1322 DP10T Hitachi Scans-001 C104 C103 C105 C106 C107 C109
Text: HAI 322 AUDIO POWER AMPLIFIER FE A TU R E S High Output Power: 5.5W typ. V c c = 13.2V, R L = 4Ì2, T.H .D .= 10% High Voltage Gain: 55dB typ. No Shock Noise at Power Switch ON High Hum Rejection: 50dB typ. (f = 500Hz, Rg = 0Ì2) High Input Impedance: 36k£2 typ.
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500Hz,
36ki2
DP-10T)
HA1322
hitachi ha1322
DP10T
Hitachi Scans-001
C104
C103
C105
C106
C107
C109
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S32M8
Abstract: No abstract text available
Text: T Dense-Pac Microsystems, Inc. ^ DPS32M8A H IG H SPEED 32K X 8 C M O S SRAM M O N O LIT H IC ADVANCED INFORMATION D ES C R IP T IO N : The D PS32M 8A is a 32K X 8 C M O S Static Random A c c e ss M em ory SRA M . The m em ory utilizes asynchronous circuitry and may be maintained in any
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DPS32M8A
PS32M
30A00M0
S32M8
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THM322500AS-70
Abstract: tc514256
Text: 262,144 W O R D S X 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTION The THM322500BS/BSG/AS/ASG is a 524,288 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514256AJ/BJ on the printed circuit board. These modules can be as well used as 524,288 words by 1G bits dynamic RAM module, by means of connecting DQO and DQ16, DQ1 and
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THM322500BS/BSG/AS/ASG
TC514256AJ/BJ
-THM322500ASG-70,
B-121
THM322500BS-60,
THM322500AS-70,
THM322500BSG-60,
THM322500ASG-70,
B-122
THM322500AS-70
tc514256
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327HU
Abstract: No abstract text available
Text: HY51 V S 18160HG(HGL) 1Mx16, 3.3V, 1K Ref, FP DESCRIPTION 16M-bit DRAM Th e HY51 V (S )1 8 1 6 0 H G /H G L is the new generation dynam ic RA M organized 1 ,0 4 8 ,5 7 6 words x 16bit. H Y 5 1 V (S )1 8 1 6 0 H G /H G L has realized higher density, higher perform ance and various functions by utiliz
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18160HG
1Mx16,
16bit.
42pin
327HU
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