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    POWER RF Search Results

    POWER RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
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    POWER RF Price and Stock

    ADLINK Technology Inc RK-620 Cover for Power SW

    Modules Accessories Material: SGCC, T=1.0mm,Painting: 413C,Production: NCT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK-620 Cover for Power SW
    • 1 $6.01
    • 10 $6.01
    • 100 $6.01
    • 1000 $6.01
    • 10000 $6.01
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    POWER RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: The Full Buccaneer Range Specifications and Applications Power Power Power Power Power Power Power Power Data - RF Data - RF Data Data Data Data Data Data Data Data Model 400 Series Buccaneer Mini Buccaneer Standard Buccaneer 6000 Series Buccaneer Plastic


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    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


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    PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    powermax

    Abstract: No abstract text available
    Text: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)


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    PDF 16-Module 15-Module powermax

    Untitled

    Abstract: No abstract text available
    Text: etal Glaze Power Pack Resistors rface Mount High Power Metal Glaze™ Power Pack Surface Mount High ensity Ceramic Package Power Density Ceramic Package Make Possible Metal Glaze™ Power Pack Series Low inductance Mount High Power nductanceSurface 0.1Ω to 348KΩ range


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    PDF 500/reel PPS11001000FLF 100ppm/Â

    Untitled

    Abstract: No abstract text available
    Text: Power Amplifiers SMTR2327-44 2300MHz to 2700MHz Specifications RF Frequency Linear Power Output P1dB Power Output PSat Power Output Adjacent Channel Power Linear Gain Gain Flatness Over Band Gain Change Over Temp Third Order Intercept OIP3 Input Return Loss


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    PDF SMTR2327-44 2300MHz 2700MHz

    11667B

    Abstract: 11667A "Power Splitters" 11667C Agilent RF and Microwave products
    Text: Agilent RF and Microwave Test Accessories Power Dividers and Splitters Power Dividers and Splitters Agilent 11667A,B power splitters These power splitters feature excellent match and tracking between outputs, operating from dc to 26.5 GHz. Power splitters are recommended for


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    PDF 1667A 1667A 11667B 11667C 11667C 11667B 11667A "Power Splitters" Agilent RF and Microwave products

    Untitled

    Abstract: No abstract text available
    Text: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V


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    PDF RF3163 RF3164 RF3164 IS-95/CDMA RF3163

    diseqc

    Abstract: DISEQC SWITCH DATASHEET Satellite receivers DC voltage LNB power controller with step-up DISEQC SWITCH lnb power 22khz diseq lnb schematic diseq AN1808 APP1808
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS WIRELESS, RF, AND CABLE Keywords: DiSEqC, diseq, 22kHz ppm, DiSEqC supply, DiSEqC power supply, 13V, 17V, lnb power supply, power supplies Apr 20, 1998 APPLICATION NOTE 1808 Adjustable LNB Power Supply Is DiSEqC Compatible


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    PDF 22kHz MAX1771 com/an1808 MAX4501: MAX931: AN1808, APP1808, Appnote1808, diseqc DISEQC SWITCH DATASHEET Satellite receivers DC voltage LNB power controller with step-up DISEQC SWITCH lnb power 22khz diseq lnb schematic diseq AN1808 APP1808

    "RF Power Modules"

    Abstract: BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW83 BLW33 BLF175 bfg97
    Text: DISCRETE SEMICONDUCTORS Line-ups RF & Microwave Power Transistors and RF Power Modules Supersedes data of 1998 Feb 5 2000 Mar 02 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz INPUT POWER


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    PDF BLV10 BLW87 BLV20 BLW83 BLV11 BLW85 BLW87 BLW83 BLW76 "RF Power Modules" BLW85 bfq34 RF Power Modules BLF147 BLF244 BLW33 BLF175 bfg97

    gsm900 DCS1800

    Abstract: No abstract text available
    Text: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is


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    PDF RF3140 RF3140 GSM850, EGSM900, 824MHz 849MHz, 880MHz 915MHz, 1710MHz 203mm gsm900 DCS1800

    DG09

    Abstract: AN-6088 ICC550 an6088 pae12 25PAE
    Text: www.fairchildsemi.com AN-6088 FAN5902 Power Management Solution for Improving the Power Efficiency of 3G WCDMA RF Power Amplifiers Abstract This application note provides the basics for implementing a Dynamic Voltage Scaling DVS power management technique with 3G WCDMA RF power amplifiers (PAs) to


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    PDF AN-6088 FAN5902 FAN5902, DG09 AN-6088 ICC550 an6088 pae12 25PAE

    bgy284e

    Abstract: BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587
    Text: BGY284E GSM/GPRS/EDGE Mobile phone RF power amplifier power amplifier module with integrated power control loop Measuring only 80 mm2, the BGY284E is an ultra-small GSM/GPRS/EDGE power amplifier module with an accurate, integrated power control loop. Combined with


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    PDF BGY284E UAA3587E BGY284E, 1800/1ly. BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587

    DCS1800

    Abstract: EGSM900 GSM900 RF3140
    Text: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is


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    PDF RF3140 GSM850/GSM900/DCS/PCS RF3140 GSM850, EGSM900, 82ith 203mm 330mm 025mm DCS1800 EGSM900 GSM900

    Untitled

    Abstract: No abstract text available
    Text: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is


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    PDF RF3140 RF3140 GSM850, EGSM900, 824MHz 849MHz, 880MHz 915MHz, 1710MHz 203mm

    Untitled

    Abstract: No abstract text available
    Text: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is


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    PDF RF3140 RF3140 GSM850, EGSM900, 824MHz 849MHz, 880MHz 915MHz, 1710MHz 203mm

    W118

    Abstract: 20-PIN RF105 RF106 frequency hopping spread spectrum 900
    Text: RF106 900 MHz Power Amplifier Product Description Features The RF106 is a class AB RF power amplifier for 900 MHz ISM band applications. It delivers output power proportional to the input signal power. • • • The RF106 power amplifier, combined with Conexant's


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    PDF RF106 RF105 20-pin diagram34 W118 frequency hopping spread spectrum 900

    DCS1800

    Abstract: EGSM900 GSM900 RF3140
    Text: RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Typical Applications • Portable Battery-Powered Equipment • Power StarTM Module 0.400 TYP Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is


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    PDF RF3140 GSM850/GSM900/DCS/PCS RF3140 GSM850, EGSM900, GSM850/GSM900 GSM850/EGSM900 DCS1800/PCS1900 DCS1800 EGSM900 GSM900

    30V30

    Abstract: agilent 18
    Text: Agilent N9355/6 Power Limiters N9355/6B 10 MHz to 18 GHz power limiter N9355/6C 10 MHz to 26.5 GHz power limiter N9355F 10 MHz to 50 GHz power limiter N9355/6 Key Specifications & Features • Protect your investment from excess RF power, DC transients and ESD damage with Agilent’s broadband power limiters


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    PDF N9355/6 N9355/6B N9355/6C N9355F N9355B N9356B N9355C N9356C 30V30 agilent 18

    SSPA

    Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
    Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while


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    varicap diodes

    Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
    Text: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld


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    PDF PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A HWCA602 HWCB602 HWCA606 HWCB606 varicap diodes BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    rfp14n05

    Abstract: N-Channel Enhancement-Mode 25AF
    Text: — POWER MOSFETs 3 N-CHANNEL POWER MOSFETs PAGE N-CHANNEL POWER MOSFET DATA SHEETS 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs. 3-3 RFD14N06, RFD14N06SM, RFP14N06 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs.


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    PDF RFD14N05, RFD14N05SM, RFP14N05 RFD14N06, RFD14N06SM, RFP14N06 RFD16N05, RFD16N05SM RFD16N06, RFD16N06SM N-Channel Enhancement-Mode 25AF