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    POWER N FET Search Results

    POWER N FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER N FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TBX 0.800

    Abstract: LTC2925 LTC2925CGN LTC2925CUF LTC2925IGN LTC2925IUF Si4412ADY LTC25
    Text: LTC2925 Multiple Power Supply Tracking Controller with Power Good Timeout DESCRIPTION FEATURES n n n n n n n n n n n Flexible Power Supply Tracking Up and Down Power Supply Sequencing Supply Stability Is Not Affected Controls Three Supplies Without Series FETs


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    PDF LTC2925 24-Lead 24-Lead LTC2902 LTC2920 LTC2921/LTC2922 LTC2921) LTC2922) LTC2923 MSOP-10 TBX 0.800 LTC2925 LTC2925CGN LTC2925CUF LTC2925IGN LTC2925IUF Si4412ADY LTC25

    T3D zener panasonic DIODE

    Abstract: T3D zener DIODE T3D 63 ZENER DIODE diode t3d panasonic diode zener t3d panasonic Wakefield Engineering LTN20069 diode zener t3d 21 ZENER DIODE T3D T3D 97 ZENER DIODE zener t2d
    Text: LTM4605 High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4605 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.


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    PDF LTM4605 LTM4605 LTM4601-1 LTM4618 LTM4604A LTM4608A 4605fc T3D zener panasonic DIODE T3D zener DIODE T3D 63 ZENER DIODE diode t3d panasonic diode zener t3d panasonic Wakefield Engineering LTN20069 diode zener t3d 21 ZENER DIODE T3D T3D 97 ZENER DIODE zener t2d

    Untitled

    Abstract: No abstract text available
    Text: LTM4609 36VIN, 34VOUT High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n The LTM 4609 is a high eficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs and support components.


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    PDF LTM4609 36VIN, 34VOUT LTM4609 LTM4606/LTM4612 LTM4606 CISPR22 LTM4608A LTM4627

    T3D 97 ZENER DIODE

    Abstract: diode zener t3d panasonic T3D zener panasonic DIODE T3D zener DIODE T3D 63 ZENER DIODE ZENER DIODE t2d 79 ZENER DIODE T3D 97 diode zener t3d 23 LTM4607V ZENER DIODE t2d 93
    Text: LTM4607 36VIN, 24VOUT High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4607 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.


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    PDF LTM4607 36VIN, 24VOUT LTM4607 LTM4603-1 LTM4601 LTM4604A LTM4605 LTM4607, LTM4608A T3D 97 ZENER DIODE diode zener t3d panasonic T3D zener panasonic DIODE T3D zener DIODE T3D 63 ZENER DIODE ZENER DIODE t2d 79 ZENER DIODE T3D 97 diode zener t3d 23 LTM4607V ZENER DIODE t2d 93

    TPM2626-60

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TPM2626-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n High Power P1dB=48.0dBm TYP. at 2.6GHz n n Partially Matched Type n Hermetically Sealed Package High Power Gain G1dB=10dB(TYP.) at 2.6GHz RF PERFORMANCE SPECIFICATIONS (Ta=25 o C)


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    PDF TPM2626-60 TPM2626-60

    TL064

    Abstract: TL064A TL064B TL064IN TL064M tl0641
    Text: TL064 TL064A - TL064B LOW POWER QUAD J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION


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    PDF TL064 TL064A TL064B DIP14 TL064M/AM/BM TL064I/AI/BI TL064C/AC/BC TL064IN TL064 TL064B TL064IN TL064M tl0641

    tl0621

    Abstract: TL062 TL062A TL062B TL062C TL062I TL062IN TL062M
    Text: TL062 TL062A - TL062B LOW POWER DUAL J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION : WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION


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    PDF TL062 TL062A TL062B TL062M/AM/BM TL062I/AI/BI -40oC, 105oC TL062C/AC/BC TL062IN tl0621 TL062 TL062B TL062C TL062I TL062IN TL062M

    schematic TL064

    Abstract: TL064 TL064A TL064B TL064IN TL064M PM-DIP14 PM-SO14 tl0641
    Text: TL064 TL064A - TL064B LOW POWER QUAD J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION


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    PDF TL064 TL064A TL064B DIP14 TL064M/AM/BM TL064I/AI/BI TL064C/AC/BC TL064IN schematic TL064 TL064 TL064B TL064IN TL064M PM-DIP14 PM-SO14 tl0641

    Untitled

    Abstract: No abstract text available
    Text: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1


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    PDF 3809A IRF7353D2 EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: LTM4611 Ultralow VIN, 15A DC/DC µModule Regulator FEATURES n n n n n n n n n n n n n n n DESCRIPTION The LTM 4611 is a high density 15A output, switch mode DC/DC buck converter power supply capable of operating from very low voltage input supplies. Included in the package are the buck switching controller, power FETs, inductor and loop-compensation components. The LTM4611


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    PDF LTM4611 36VIN, 34VOUT LTM4612 LTM8023 LTM8032 EN55022 4611fa

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


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    PDF TIM1414-30L -25dBc 7-AA03A)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


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    PDF TIM1314-9L 75GHz -25dBc 33dBm

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


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    PDF TIM1414-18L -25dBc 36dBm 25GHz

    TIM1414-18L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


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    PDF TIM1414-18L -30dBc 36dBm 25GHz TIM1414-18L

    TIM1414-30L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


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    PDF TIM1414-30L -25dBc 7-AA03A) TIM1414-30L

    LTC4088

    Abstract: No abstract text available
    Text: LTC4088-1/LTC4088-2 High Efficiency Battery Charger/USB Power Manager with Regulated Output Voltage DESCRIPTION FEATURES n n n n n n n n n n Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application


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    PDF LTC4088-1/LTC4088-2 DFN-14 LTC4089/LTC4089-5 DFN-14 LTC4089) LTC4089-5) LTC4413 40881fc LTC4088

    TIM1414-18L-252

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-18L-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


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    PDF TIM1414-18L-252 75GHz -25dBc 36dBm TIM1414-18L-252

    LTC4088

    Abstract: No abstract text available
    Text: LTC4088 High Efficiency Battery Charger/USB Power Manager DESCRIPTION FEATURES n n n n n n n n n Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application 180mΩ Internal Ideal Diode Plus Optional External


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    PDF LTC4088 14-Lead 408Maintains DFN14 LTC4089/LTC4089-5 LTC4089) LTC4089-5) 4088fb LTC4088

    TIM1314-30L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


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    PDF TIM1314-30L 75GHz -25dBc 7-AA03A) TIM1314-30L

    7-AA03A

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


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    PDF TIM1314-30L 75GHz -25dBc 7-AA03A) 7-AA03A

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


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    PDF TIM1314-30L 75GHz -25dBc 7-AA03A)

    TIM1414-10LA-252

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-10LA-252 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE


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    PDF TIM1414-10LA-252 75GHz 2-11C1B) TIM1414-10LA-252

    pa1520

    Abstract: No abstract text available
    Text: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S


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    PDF UPA1520B PA1520B /iPA1520BH pa1520

    CI008

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power


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    PDF UPA1702 CI008