TBX 0.800
Abstract: LTC2925 LTC2925CGN LTC2925CUF LTC2925IGN LTC2925IUF Si4412ADY LTC25
Text: LTC2925 Multiple Power Supply Tracking Controller with Power Good Timeout DESCRIPTION FEATURES n n n n n n n n n n n Flexible Power Supply Tracking Up and Down Power Supply Sequencing Supply Stability Is Not Affected Controls Three Supplies Without Series FETs
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LTC2925
24-Lead
24-Lead
LTC2902
LTC2920
LTC2921/LTC2922
LTC2921)
LTC2922)
LTC2923
MSOP-10
TBX 0.800
LTC2925
LTC2925CGN
LTC2925CUF
LTC2925IGN
LTC2925IUF
Si4412ADY
LTC25
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T3D zener panasonic DIODE
Abstract: T3D zener DIODE T3D 63 ZENER DIODE diode t3d panasonic diode zener t3d panasonic Wakefield Engineering LTN20069 diode zener t3d 21 ZENER DIODE T3D T3D 97 ZENER DIODE zener t2d
Text: LTM4605 High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4605 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.
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LTM4605
LTM4605
LTM4601-1
LTM4618
LTM4604A
LTM4608A
4605fc
T3D zener panasonic DIODE
T3D zener DIODE
T3D 63 ZENER DIODE
diode t3d panasonic
diode zener t3d panasonic
Wakefield Engineering LTN20069
diode zener t3d 21
ZENER DIODE T3D
T3D 97 ZENER DIODE
zener t2d
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Untitled
Abstract: No abstract text available
Text: LTM4609 36VIN, 34VOUT High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n The LTM 4609 is a high eficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs and support components.
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LTM4609
36VIN,
34VOUT
LTM4609
LTM4606/LTM4612
LTM4606
CISPR22
LTM4608A
LTM4627
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T3D 97 ZENER DIODE
Abstract: diode zener t3d panasonic T3D zener panasonic DIODE T3D zener DIODE T3D 63 ZENER DIODE ZENER DIODE t2d 79 ZENER DIODE T3D 97 diode zener t3d 23 LTM4607V ZENER DIODE t2d 93
Text: LTM4607 36VIN, 24VOUT High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4607 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.
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LTM4607
36VIN,
24VOUT
LTM4607
LTM4603-1
LTM4601
LTM4604A
LTM4605
LTM4607,
LTM4608A
T3D 97 ZENER DIODE
diode zener t3d panasonic
T3D zener panasonic DIODE
T3D zener DIODE
T3D 63 ZENER DIODE
ZENER DIODE t2d 79
ZENER DIODE T3D 97
diode zener t3d 23
LTM4607V
ZENER DIODE t2d 93
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TPM2626-60
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TPM2626-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n High Power P1dB=48.0dBm TYP. at 2.6GHz n n Partially Matched Type n Hermetically Sealed Package High Power Gain G1dB=10dB(TYP.) at 2.6GHz RF PERFORMANCE SPECIFICATIONS (Ta=25 o C)
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TPM2626-60
TPM2626-60
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TL064
Abstract: TL064A TL064B TL064IN TL064M tl0641
Text: TL064 TL064A - TL064B LOW POWER QUAD J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION
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TL064
TL064A
TL064B
DIP14
TL064M/AM/BM
TL064I/AI/BI
TL064C/AC/BC
TL064IN
TL064
TL064B
TL064IN
TL064M
tl0641
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tl0621
Abstract: TL062 TL062A TL062B TL062C TL062I TL062IN TL062M
Text: TL062 TL062A - TL062B LOW POWER DUAL J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION : WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION
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TL062
TL062A
TL062B
TL062M/AM/BM
TL062I/AI/BI
-40oC,
105oC
TL062C/AC/BC
TL062IN
tl0621
TL062
TL062B
TL062C
TL062I
TL062IN
TL062M
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schematic TL064
Abstract: TL064 TL064A TL064B TL064IN TL064M PM-DIP14 PM-SO14 tl0641
Text: TL064 TL064A - TL064B LOW POWER QUAD J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION
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TL064
TL064A
TL064B
DIP14
TL064M/AM/BM
TL064I/AI/BI
TL064C/AC/BC
TL064IN
schematic TL064
TL064
TL064B
TL064IN
TL064M
PM-DIP14
PM-SO14
tl0641
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Untitled
Abstract: No abstract text available
Text: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1
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3809A
IRF7353D2
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: LTM4611 Ultralow VIN, 15A DC/DC µModule Regulator FEATURES n n n n n n n n n n n n n n n DESCRIPTION The LTM 4611 is a high density 15A output, switch mode DC/DC buck converter power supply capable of operating from very low voltage input supplies. Included in the package are the buck switching controller, power FETs, inductor and loop-compensation components. The LTM4611
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LTM4611
36VIN,
34VOUT
LTM4612
LTM8023
LTM8032
EN55022
4611fa
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1414-30L
-25dBc
7-AA03A)
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1314-9L
75GHz
-25dBc
33dBm
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1414-18L
-25dBc
36dBm
25GHz
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TIM1414-18L
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1414-18L
-30dBc
36dBm
25GHz
TIM1414-18L
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TIM1414-30L
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1414-30L
-25dBc
7-AA03A)
TIM1414-30L
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LTC4088
Abstract: No abstract text available
Text: LTC4088-1/LTC4088-2 High Efficiency Battery Charger/USB Power Manager with Regulated Output Voltage DESCRIPTION FEATURES n n n n n n n n n n Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application
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LTC4088-1/LTC4088-2
DFN-14
LTC4089/LTC4089-5
DFN-14
LTC4089)
LTC4089-5)
LTC4413
40881fc
LTC4088
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TIM1414-18L-252
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-18L-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1414-18L-252
75GHz
-25dBc
36dBm
TIM1414-18L-252
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LTC4088
Abstract: No abstract text available
Text: LTC4088 High Efficiency Battery Charger/USB Power Manager DESCRIPTION FEATURES n n n n n n n n n Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application 180mΩ Internal Ideal Diode Plus Optional External
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LTC4088
14-Lead
408Maintains
DFN14
LTC4089/LTC4089-5
LTC4089)
LTC4089-5)
4088fb
LTC4088
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TIM1314-30L
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz
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TIM1314-30L
75GHz
-25dBc
7-AA03A)
TIM1314-30L
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7-AA03A
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz
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TIM1314-30L
75GHz
-25dBc
7-AA03A)
7-AA03A
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz
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TIM1314-30L
75GHz
-25dBc
7-AA03A)
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TIM1414-10LA-252
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-10LA-252 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
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TIM1414-10LA-252
75GHz
2-11C1B)
TIM1414-10LA-252
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pa1520
Abstract: No abstract text available
Text: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S
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UPA1520B
PA1520B
/iPA1520BH
pa1520
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CI008
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power
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UPA1702
CI008
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