FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
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SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
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NEC 10F triac
Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2
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G10748EJDV0SG00
NEC 10F triac
10F triac NEC
scr 5P4M
2P4M PIN DIAGRAM
thyristor battery charger 2p4m
3S4M SCR
Ringing Choke Converter
equivalent scr 2p4m
3s4m thyristor
2SK1272
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
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marking g20
Abstract: 2SK1658
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for
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2SK1658
2SK1658
SC-70
marking g20
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lm117 3.3V
Abstract: 6v battery charger lm317 automatic 12v battery charger lm317 automatic LM317 dc adaptor 12v to 3.6v lm317 soic-8 circuit diagram for 48v automatic battery charger LM337 TO92 Parallel Application LM2596 SOT23-5 i2c based pwm generator 12V DC to 3 Phase 36V AC INVERTERS
Text: Power Products Selection Guide 1Q 2006 National’s Power Management Product Portfolio Power Solutions by Category Voltage Conversion Voltage Control Voltage References Voltage Monitoring Linear regulators MOSFET drivers Shunt Current gauges Switching regulators
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SC-70
O-220
OT-223
O-263
O-252
OT-23
lm117 3.3V
6v battery charger lm317 automatic
12v battery charger lm317 automatic
LM317 dc adaptor 12v to 3.6v
lm317 soic-8
circuit diagram for 48v automatic battery charger
LM337 TO92
Parallel Application LM2596
SOT23-5 i2c based pwm generator
12V DC to 3 Phase 36V AC INVERTERS
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SSS7N60B
Abstract: Power MOSFET SSP7n60b SSP7N60B
Text: SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP7N60B/SSS7N60B
O-220
O-220F
SSS7N60B
Power MOSFET SSP7n60b
SSP7N60B
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ssp45N20B 200v mosfet
Abstract: SSP45N20B SSS45N20B
Text: SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP45N20B/SSS45N20B
ssp45N20B 200v mosfet
SSP45N20B
SSS45N20B
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SSP10N60B
Abstract: SSS10N60B diode sd pd
Text: SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP10N60B/SSS10N60B
O-220
O-220F
SSP10N60B
SSS10N60B
diode sd pd
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SS*2n60b
Abstract: SSP2N60B SSS2N60B SSP2N60 SSS2n60 20ISM
Text: SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP2N60B/SSS2N60B
O-220
O-220F
SS*2n60b
SSP2N60B
SSS2N60B
SSP2N60
SSS2n60
20ISM
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ssp*45N20A
Abstract: SSP45N20A 45N20B 45N20
Text: SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP45N20B/SSS45N20B
O-220
45N20B
SSP45N20B
FP001
ssp*45N20A
SSP45N20A
45N20B
45N20
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SSP10N60B
Abstract: SSS10N60B
Text: SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP10N60B/SSS10N60B
O-220
O-220F
SSP10N60B
SSS10N60B
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SSP1N50B
Abstract: No abstract text available
Text: SSP1N50B SSP1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP1N50B
SSP1N50B
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SSP1N60B
Abstract: Power MOSFET SSP SSS1N60B
Text: SSP1N60B/SSS1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP1N60B/SSS1N60B
O-220
O-220F
SSP1N60B
Power MOSFET SSP
SSS1N60B
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45N20B
Abstract: No abstract text available
Text: SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP45N20B/SSS45N20B
O-220F
45N20B
SSS45N20B
FP001
45N20B
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sss1n50B
Abstract: No abstract text available
Text: SSP1N50B/SSS1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP1N50B/SSS1N50B
sss1n50B
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SSS7N60B
Abstract: SSS7N60B equivalent SSP7N60B 28A-600
Text: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP7N60B/SSS7N60B
O-220F
SSS7N60B
SSS7N60B equivalent
SSP7N60B
28A-600
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sss10n60b
Abstract: SSP10N60B
Text: SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP10N60B/SSS10N60B
O-220
sss10n60b
SSP10N60B
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ssp2n60b
Abstract: SSS2N60B SS*2n60b 20ISM
Text: SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP2N60B/SSS2N60B
O-220
ssp2n60b
SSS2N60B
SS*2n60b
20ISM
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SSS4N60B
Abstract: ssp4n60b Power MOSFET SSP4N60B SSS4N60B equivalent
Text: SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP4N60B/SSS4N60B
O-220F
SSS4N60B
ssp4n60b
Power MOSFET SSP4N60B
SSS4N60B equivalent
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Irf640 irf9540
Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
Irf640 irf9540
IRFR220TF
IRF510 mosfet irf640
451 MOSFET
KSP44
IRFR9120-TF
STR 456
2n3904 2n3906
KST2222ATF
IRFR120TF
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vo8 diode
Abstract: MOSFET 800V 3A
Text: SSP3N80A Advanced Power MOSFET FEATURES Avatanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ Low Rds(on) ' 3.800 Q (Typ.) 800 V RdS(oo) =
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SSP3N80A
vo8 diode
MOSFET 800V 3A
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Untitled
Abstract: No abstract text available
Text: SSP7N80A Advanced Power MOSFET FEATURES BVDSS = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25nA Max. @ VDS = 800V
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SSP7N80A
O-220
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SSP4N80A
Abstract: 2950PF
Text: SSP4N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVDss - 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25j*A Max. @ VDS = 800V
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SSP4N80A
O-220
SSP4N80A
2950PF
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MOSFET 900V 2A
Abstract: No abstract text available
Text: SSP2N90A Advanced Power MOSFET FEATURES BV0SS = 900 V • ■ ■ ■ ■ > Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 i-iA Max. @ Vqs = 900V
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SSP2N90A
O-220
MOSFET 900V 2A
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