SMD1P
Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91552B
IRFN440
JANTX2N7222U
JANTXV2N7222U
MIL-PRF-19500/596]
SMD1P
2N7222U
IRFN440
JANTX2N7222U
JANTXV2N7222U
irfn44
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t5n50
Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK
Text: NTD5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS
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NTD5N50
r14525
NTD5N50/D
t5n50
5n50
5n50 mosfet
NTD5N50
NTD5N50T4
351 D-PAK
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2P50EG
Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
MTP2P50E/D
2P50EG
2P50
2p50e
AN569
MTP2P50E
MTP2P50EG
mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTW20N50E
Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW20N50E
r14525
MTW20N50E/D
AN569
MTW20N50E
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MTY30N50E
Abstract: No abstract text available
Text: MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY30N50E
O-264
r14525
MTY30N50E/D
MTY30N50E
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MTY30N50E
Abstract: AN569
Text: MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY30N50E
r14525
MTY30N50E/D
MTY30N50E
AN569
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MTP2P50E
Abstract: AN569 mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
r14525
MTP2P50E/D
MTP2P50E
AN569
mosfet transistor 400 volts.100 amperes
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TL 188 TRANSISTOR PIN DIAGRAM
Abstract: AN569 MTY20N50E
Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY20N50E
r14525
MTY20N50E/D
TL 188 TRANSISTOR PIN DIAGRAM
AN569
MTY20N50E
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AN569
Abstract: MTP2P50E mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
MTP2P50E/D
AN569
MTP2P50E
mosfet transistor 400 volts.100 amperes
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MTW14N50
Abstract: MTW14N50E AN569 MT*14N50E MTW14N50E-D
Text: MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW14N50E
r14525
MTW14N50E/D
MTW14N50
MTW14N50E
AN569
MT*14N50E
MTW14N50E-D
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Untitled
Abstract: No abstract text available
Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY20N50E
MTY20N50E/D
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11N-50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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11N50
O-220
11N50
O-220F1
QW-R502-462
11N-50
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Untitled
Abstract: No abstract text available
Text: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET
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9N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state
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QW-R502-522
9N50
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16N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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16N50
16N50
O-220F
QW-R502-532
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Untitled
Abstract: No abstract text available
Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar
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FQA13N50CF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N50 Power MOSFET 4 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-251
QW-R502-525
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7n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
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QW-R502-527
7n50
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1N50L-TA3-T
Abstract: 1N50
Text: UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary Power MOSFET 1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
QW-R502-548
1N50L-TA3-T
1N50
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Untitled
Abstract: No abstract text available
Text: Analog Power AM12N50P N-Channel 500-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 500 Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting
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AM12N50P
AM12N50P
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Untitled
Abstract: No abstract text available
Text: Analog Power AM9N50P N-Channel 500-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 500 Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting
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AM9N50P
AM9N50P
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"RF MOSFET" 300W
Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating
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IXZ12210N50L
175MHz
175MHz
IXZ1210N50L
dsIXZ12210N50L
"RF MOSFET" 300W
transistor tl 187
"RF MOSFETs"
RF POWER MOSFET
200W vhf
"RF MOSFET"
class d 200w
IXZ12210N50L
mosfet class ab rf
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16N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220F
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O-220F2
QW-R502-532
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547 MOSFET
Abstract: "by 236" diode 2n50 500v 2A mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 2N50 Preliminary Power MOSFET 2 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220F
O-252
QW-R502-547
547 MOSFET
"by 236" diode
2n50
500v 2A mosfet
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