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    POWER MOSFET 200 AMPERE Search Results

    POWER MOSFET 200 AMPERE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 200 AMPERE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200V 200A mosfet

    Abstract: mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A STY100NS20FD mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002
    Text: QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other


    Original     		PDF QJD0240002 Amperes/200 STY100NS20FD 200V 200A mosfet mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002

    "MOSFET Module"

    Abstract: QJB0121002 MOSFET 50V 100A FS70UMJ-2 mosfet module
    Text: QJB0121002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Four MOSFET Module 210 Amperes/100 Volts Description: Powerex power MOSFET Module designed specially for customer applications. Each module consists of four Mosfet transistors in an H-Bridge configuration with each


    Original     		PDF QJB0121002 Amperes/100 FS70UMJ-2 QJB01210ce -100A/ "MOSFET Module" QJB0121002 MOSFET 50V 100A mosfet module

    FS70UM-2

    Abstract: QJD0142002 "dual MOSFET Module" "MOSFET Module"
    Text: QJD0142002 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting


    Original     		PDF QJD0142002 FS70UM-2 QJD0142002 "dual MOSFET Module" "MOSFET Module"

    "MOSFET Module"

    Abstract: "dual MOSFET Module" 6900 mosfet FS70UMJ-2 QJD0142003
    Text: QJD0142003 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting


    Original     		PDF QJD0142003 FS70UMJ-2 "MOSFET Module" "dual MOSFET Module" 6900 mosfet QJD0142003

    fs14sm-18a

    Abstract: "MOSFET Module" QJS0950001 module 900 FS14SM18A n mosfet low vgs
    Text: QJS0950001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single Power MOSFET Module 900 Volts 500 Amperes Description: Powerex Single Mosfet Module designed specially for customer applications. Features: • • • • • • C Isolated Mounting


    Original     		PDF QJS0950001 FS14SM-18A "MOSFET Module" QJS0950001 module 900 FS14SM18A n mosfet low vgs

    "MOSFET Module"

    Abstract: "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module
    Text: QJD0232001 320 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Power MOSFET Module 320 Amperes 250 Volts Error! Not a valid link. Description: Powerex Dual MOSFET Half Bridge Modules with Avalanche Body Diodes


    Original     		PDF QJD0232001 "MOSFET Module" "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module

    AN569

    Abstract: NTP30N20
    Text: NTP30N20 Preferred Device Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ


    Original     		PDF NTP30N20 tpv10 r14525 NTP30N20/D AN569 NTP30N20

    AN569

    Abstract: NTB30N20 NTB30N20T4 SMD310
    Text: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode


    Original     		PDF NTB30N20 r14525 NTB30N20/D AN569 NTB30N20 NTB30N20T4 SMD310

    transistor c 2335

    Abstract: AN569 NTP30N20
    Text: NTP30N20 Preferred Device Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ


    Original     		PDF NTP30N20 tpv10 r14525 NTP30N20/D transistor c 2335 AN569 NTP30N20

    N20E

    Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
    Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast


    Original     		PDF MTD6N20E MTD6N20E/D N20E on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e

    AN569

    Abstract: MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
    Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast


    Original     		PDF MTD6N20E r14525 MTD6N20E/D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e

    n20eg

    Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
    Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original     		PDF MTD6N20E MTD6N20E/D n20eg 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4

    AN569

    Abstract: NTB30N20 NTB30N20T4 SMD310
    Text: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete • • • 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode


    Original     		PDF NTB30N20 r14525 NTB30N20/D AN569 NTB30N20 NTB30N20T4 SMD310

    AN569

    Abstract: MTY55N20E
    Text: MTY55N20E Preferred Device Power MOSFET 55 Amps, 200 Volts N−Channel TO−264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery


    Original     		PDF MTY55N20E O-264 r14525 MTY55N20E/D AN569 MTY55N20E

    Untitled

    Abstract: No abstract text available
    Text: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB20N20E r14525 MTB20N20E/D

    MTW32N20E

    Abstract: No abstract text available
    Text: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast


    Original     		PDF MTW32N20E MTW32N20E

    AN569

    Abstract: MTW32N20E
    Text: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast


    Original     		PDF MTW32N20E r14525 MTW32N20E/D AN569 MTW32N20E

    MTY55N20E

    Abstract: AN569
    Text: MTY55N20E Preferred Device Power MOSFET 55 Amps, 200 Volts N–Channel TO–264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery


    Original     		PDF MTY55N20E r14525 MTY55N20E/D MTY55N20E AN569

    k 2101 MOSFET

    Abstract: 2N6789
    Text: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		PDF 2N679° 2N6789 2N6790 k 2101 MOSFET

    ufn620

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS UFN620 200 Volt, 0.8 Ohm N-Channel UFN622 UFN623 FEATURES DESCRIPTION • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rnsiom and a high transconductance.


    OCR Scan     		PDF UFN620 UFN622 UFN623 UFN620 UFN621 UFN622

    ufn240

    Abstract: 25jo TH 2190 mosfet
    Text: POWER MOSFET TRANSISTORS UFN240 UFN242 UFN243 200 Volt, 0.2 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF UFN240 UFN242 UFN243 UFN241 UFN242 25jo TH 2190 mosfet

    2N6783

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 2N6783 JTX, JTXV 2N6784 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF 2N6783 2N6784 2N67184

    ufn250

    Abstract: UFN253
    Text: T2 UNITRODE CORP 9347963 UNITRODE DQIOLHE ? ^ 92D CORP D 10642 UFN250 UFN251 UFN252 UFN253 POWER MOSFET TRANSISTORS r 3? 1 3 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF UFN250 UFN251 UFN252 UFN253 UFN251 UFN253

    Untitled

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS UFN250 UFN252 UFN253 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance.


    OCR Scan     		PDF UFN250 UFN252 UFN253 UFN251 06TA1M