Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.
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UT150N04
UT150N04
UT150N04L-TA3-T
UT150N04G-TA3-T
O-220
QW-R502-659
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.
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UT150N04
UT150N04
UT150N04L-TA3-T
UT150N04G-TA3-T
O-220
QW-R502-650
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PDF
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF1404 Preliminary Power MOSFET 162A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF1404 is a N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.
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UF1404
UF1404
UF1404L-TA3-T
UF1404G-TA3-T
QW-R502-641
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PDF
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UTT150N03
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC’s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior
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UTT150N03
UTT150N03
QW-R502-516
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UTT150N03
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC’s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior
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UTT150N03
UTT150N03
QW-R502-516
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design
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UF9640
UF9640
QW-R502-484
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
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UTT150N06
UTT150N06
102nC)
UTT150N06L-TA3-T
UTT150N06G-TA3-T
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design
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UF9640
UF9640
QW-R502-484
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
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Original
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UTT150N06
UTT150N06
102nC)
O-220
QW-R502-512
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
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Original
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UF9640
UF9640
O-220
QW-R502-484
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
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Original
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UF9640
UF9640
QW-R502-484
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
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UF9640
UF9640
QW-R502-484
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PDF
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Untitled
Abstract: No abstract text available
Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC120AM12CT3AG
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irfps40n60k
Abstract: IRFPS
Text: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V
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IRFPS40N60K
O-247AC
5M-1994.
O-274AA
irfps40n60k
IRFPS
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PDF
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AUIRF7319Q
Abstract: 96364B 8763A
Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET
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96364B
AUIRF7319Q
AUIRF7319Q
96364B
8763A
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PDF
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96364
Abstract: No abstract text available
Text: PD - 96364 AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET
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AUIRF7319Q
96364
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET
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96364B
AUIRF7319Q
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PWM solenoid driver
Abstract: LM9061 LM9061M LM9061MX M08A NDP706A UVSO 4
Text: LM9061 Power MOSFET Driver with Lossless Protection withstand 60V power supply transients. The LM9061 is available in an 8-pin small outline surface mount package. General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as
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LM9061
LM9061
PWM solenoid driver
LM9061M
LM9061MX
M08A
NDP706A
UVSO 4
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PDF
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Untitled
Abstract: No abstract text available
Text: LM9061 Power MOSFET Driver with Lossless Protection withstand 60V power supply transients. The LM9061 is available in an 8-pin small outline surface mount package. General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as
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LM9061
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IRFM9240
Abstract: JANTX2N7237 JANTXV2N7237
Text: PD - 90497E POWER MOSFET THRU-HOLE TO-254AA IRFM9240 JANTX2N7237 JANTXV2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D IRFM9240 0.51Ω -11A HEXFET® MOSFET technology is the key to International
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90497E
O-254AA)
IRFM9240
JANTX2N7237
JANTXV2N7237
MIL-PRF-19500/595
IRFM9240
O-254AA.
MIL-PRF-19500
JANTX2N7237
JANTXV2N7237
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IRF 450 MOSFET
Abstract: IRFM240 JANTX2N7219 JANTXV2N7219
Text: PD - 90555D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International
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90555D
O-254AA)
IRFM240
JANTX2N7219
JANTXV2N7219
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
IRF 450 MOSFET
IRFM240
JANTX2N7219
JANTXV2N7219
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PDF
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IRFN9240
Abstract: JANS2N7237U JANTX2N7237U JANTXV2N7237U
Text: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91554E
IRFN9240
JANTX2N7237U
JANTXV2N7237U
JANS2N7237U
MIL-PRF-19500/595
-150A/
-200V,
IRFN9240
JANS2N7237U
JANTX2N7237U
JANTXV2N7237U
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5S45S
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
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OCR Scan
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IRFY9240CM
-200Volt,
5545S
DD24541
5S45S
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