2SK1842
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Drain current Gate current Power dissipation Junction temperature
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2SK1842
2SK1842
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LDMOS
Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior
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AN1223
LDMOS
LDMOS digital
bipolar junction transistor
"RF Power Transistors"
mosfet high power rf ldmos
AN1223
amplitude modulation applications
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amplitude modulation applications
Abstract: LDMOS AN1223
Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain
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AN1223
amplitude modulation applications
LDMOS
AN1223
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mosfet high power rf ldmos
Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain
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AN1223
mosfet high power rf ldmos
Bipolar Junction Transistor
AN1223
RF MOSFET CLASS AB
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Infrared-Sensor
Abstract: latest Infrared-Sensor 2SK2380 SC-89
Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.80) (0.80) Drain current Gate current Allowable power dissipation Channel temperature
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2SK2380
Infrared-Sensor
latest Infrared-Sensor
2SK2380
SC-89
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pyroelectric sensor application notes
Abstract: Junction-FET pyro pyroelectric sensor 2SK2988 "Field Effect Transistor" JISC7030 SC-75
Text: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
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2SK2988
SC-75
pyroelectric sensor application notes
Junction-FET
pyro
pyroelectric sensor
2SK2988
"Field Effect Transistor"
JISC7030
SC-75
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
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2SJ0163
2SJ163)
2SK1103
O-236
SC-59
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Junction-FET
Abstract: Silicon Junction FETs p channel Junction-FET 2SK2593 SC-89
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1 2 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 1.60+0.05 – 0.03 Gate to Source voltage Drain current Gate current Allowable power dissipation
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2SK2593
Junction-FET
Silicon Junction FETs
p channel Junction-FET
2SK2593
SC-89
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Untitled
Abstract: No abstract text available
Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation
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2SK1103
2SJ163
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
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2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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2SK0198
Abstract: 2SK198
Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30 V Drain current ID 20 mA Gate current IG 10 mA Power dissipation
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2SK0198
2SK198)
2SK0198
2SK198
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KSK161
Abstract: power Junction FET
Text: KSK161 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER TO-92 • NF =2.5dB TYP •YFS=9.0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDO IG PD TJ T STG Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature
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KSK161
KSK161
power Junction FET
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation
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2SK1103
2SJ0163
2SJ163)
2SJ0163
2SJ163
2SK1103
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Junction-FET
Abstract: KSK211
Text: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER SOT-23 • NF =2.5dB TYP •YFS=9.0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDO IG PD TJ T STG Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature
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KSK211
OT-23
Junction-FET
KSK211
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Hitachi DSA002749
Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over
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HAF2001
220AB
D-85622
Hitachi DSA002749
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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0E12
Abstract: MOSFET Termination Structure
Text: Low Voltage Super Junction MOSFET Simulation and Experimentation Timothy Henson, Joe Cao International Rectifier 233 Kansas St, El Segundo, CA 90245 USA as presented at ISPSD Conference , April 2003 Abstract. The application of Super Junction concepts to a low voltage power MOSFET is
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P06V
Abstract: D024 KSK161
Text: KSK161 SILICON N-CHANNEL JUNCTION FET _ i- FM TUNER VHF AMPLIFIER • NF - 2.S dB TYP •|Yra|- 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (T.-25 °C) Characteristic Symbol Gate-Drain Voltage Gate Current Power Dissipation Junction Temperature
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KSK161
O-92S
00E4flbb
P06V
D024
KSK161
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Untitled
Abstract: No abstract text available
Text: KSK161 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER • N F =2.5dB TYP • I Y fs I «9.0 m S (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol Characteristic Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature Storage Temperature
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KSK161
-100M,
os-10V,
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transistor equivalent table
Abstract: No abstract text available
Text: Letter Symbol and Graphical Symbol 8.1 Letter symbol Table 1 General Description Symbol Rth Rth j-c Rth j-s noise figure allowable power dissipation therm al resistance therm al resistance, junction to case therm al resistance, (junction to stud) Rth j-a
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Untitled
Abstract: No abstract text available
Text: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VH F AMPLIFIER S O T-23 . N F = 2 .5 d B T Y P • I Y fs I =9-0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol G ate-D rain Voltage G ate-C urrent Power Dissipation Junction Tem perature
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KSK211
-100nA,
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7.1 Channel audio amplifier
Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_
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BFW13
BFW12
BFW11
BFW10
BF245A
BF245B
BF245C
BF256A
BF256B
BF545A
7.1 Channel audio amplifier
amplifier
audio
BFT46
BF861A
n channel audio
BF410C
BF512
transistors BFW10
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