POWER DIOD Search Results

POWER DIOD Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

POWER DIOD Price and Stock

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IXYS Corporation DSA1-12D Small Signal Switching Diodes 1 Amps 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	DSA1-12D	Box			100	1 - 10 - 100 $2.81 1000 $2.68 10000 $2.57	Buy Now
IXYS Corporation DSA1-18D Small Signal Switching Diodes 1800V 2.3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	DSA1-18D	Box			100	1 - 10 - 100 $2.7 1000 $2.5 10000 $2.5	Buy Now
IXYS Corporation DSA1-16D Small Signal Switching Diodes 1 Amps 1600V 1600V 1A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	DSA1-16D	Box			100	1 - 10 - 100 $2.71 1000 $2.5 10000 $2.5	Buy Now

POWER DIOD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 16. Programmable Power and Temperature Sensing Diode in Stratix III Devices SIII51016-1.1 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are operating, while dynamic power is comprised of the	Original	PDF	SIII51016-1
power diodes with V-I characteristics Abstract: variable power supply circuit Text: 16. Programmable Power and Temperature-Sensing Diodes in Stratix III Devices SIII51016-1.5 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are	Original	PDF	SIII51016-1 power diodes with V-I characteristics variable power supply circuit
NTE5700 Abstract: NTE5701 NTE5702 d 5702 1200v scr NTE5705 schematic diagram scr 10K Varistor schematic symbol for varistor vgd schematic diagram Text: NTE5700 thru NTE5705 Industrial Power Module Description: The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and power diodes configured in a single package. Applications include power supplies, control circuits and battery chargers.	Original	PDF	NTE5700 NTE5705 NTE5705 NTE441A NTE5701 NTE5702 d 5702 1200v scr schematic diagram scr 10K Varistor schematic symbol for varistor vgd schematic diagram
SE 7889 Abstract: peltier cooler Peltier module L8413 LLD1007E01 AL7 1BW Text: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%) 30 Top=25℃ RADIANT OUTPUT POWER (W)	Original	PDF	L8413 SE-171-41 LLD1007E01 SE 7889 peltier cooler Peltier module L8413 LLD1007E01 AL7 1BW
L8411 Abstract: LLD1008E01 Text: HIGH POWER QUASI-CW LASER DIODE L8411 Figure 1: Radiant Output Power vs. Forward Current Figure 2: Radiant Output Power vs. Forward Current 100 120 Pulse Duration=200 s Frequency=1KHz RADIANT OUTPUT POWER W Pulse Duration=200μs Frequency=50Hz RADIANT OUTPUT POWER (W)	Original	PDF	L8411 00W/bar SE-171-41 LLD1008E01 L8411 LLD1008E01
Cree SiC diode die Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet Text: APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power Factor Correction CircuitsCorrection Circuits by Ranbir Richmond BySingh Ranbir and SinghJames and James Richmond Introduction conditions; and complex EMI filtering	Original	PDF	200-V CPWR-AN01, Cree SiC diode die snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
Untitled Abstract: No abstract text available Text: Power Management in Stratix V Devices 11 2013.05.06 SV51013 Subscribe Feedback This chapter describes the programmable power technology, hot-socketing feature, power-on reset POR requirements, power-up sequencing recommendation, temperature sensing diode (TSD), and their	Original	PDF	SV51013
100mw laser diode INGAAs Abstract: 100mw laser diode 980 nm laser diode 980 nm ML8624S ML8624S-01 ML8624S-02 ML8624S-03 ML8924 ML8924-01 ML8924-02 Text: MITSUBISHI LASER DIODES PRELIMINARY ML8XX4 SERIES 980nm High Power Laser Diode TYPE NAME ML8624S,ML8924 980nm High Power LD FEATURES DESCRIPTION Various Power (CW 200,150,100mW) ML8xx4 series are InGaAs/ GaAs high power laser 980nm typical emission wavelength	Original	PDF	980nm ML8624S ML8924 100mW) 980nm, 0-70degC) 100mW. 2-90deg 100mw laser diode INGAAs 100mw laser diode 980 nm laser diode 980 nm ML8624S-01 ML8624S-02 ML8624S-03 ML8924 ML8924-01 ML8924-02
Fiber-Bragg-Grating Abstract: 2 Wavelength Laser Diode laser diode 980 nm ML8922 High power laser diode 100mw laser diode INGAAs 100mw laser diode INGAAs 980 nm 100mw laser diode 980 nm Text: MITSUBISHI LASER DIODES PRELIMINARY ML8XX2 SERIES 980nm High Power Laser Diode TYPE NAME ML8622S,ML8922 980nm High Power LD FEATURES DESCRIPTION Various Power (CW 200,150,100mW) ML8xx2 series are InGaAs/ GaAs high power laser 980nm typical emission wavelength	Original	PDF	980nm ML8622S ML8922 100mW) 980nm, 0-70degC) 100mW, 2-90deg Fiber-Bragg-Grating 2 Wavelength Laser Diode laser diode 980 nm ML8922 High power laser diode 100mw laser diode INGAAs 100mw laser diode INGAAs 980 nm 100mw laser diode 980 nm
150C1K Abstract: SMA-FL Text: MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide	Original	PDF	MBRAF1100T3G MBRAF1100T3/D 150C1K SMA-FL
AC-DC Controllers Abstract: No abstract text available Text: WHY DIODES – POWER SUPPLY 1 Why DIODES? Simple and Efficient Solutions In Power Supply Accessible Design and Applications Expertise Full System Solution Complete Power Solutions for Multiple Applications Industry-standard discretes and ICs Improve power supply efficiency	Original	PDF	ZXGD3100 AP37xx/39xx AC-DC Controllers
b8h100g Abstract: MBRB8H100T4G Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and	Original	PDF	MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G
SLD104U Abstract: SLD104AU SLD-104U M259 Text: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply	Original	PDF	SLD104AU SLD104AU SLD104U, M-259 SLD104U SLD-104U M259
SLD301V-1 Abstract: 1w laser diode 830 nm SLD301V SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3 Text: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Pin Configuration	Original	PDF	SLD301V 100mW SLD301V M-248 LO-11) SLD301V-1 1w laser diode 830 nm SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3

APT0601 Abstract: APTM100A13SCG APT0502 Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance	Original	PDF	APTM100A13SCG APT0601 APTM100A13SCG APT0502
SLD104U Abstract: SLD104AU SLD104U equivalent C6802 IEC60825-1 AlGaAs laser diode low noise, 780 nm, 7 mw low noise, 780 nm, 5.6 mm, 5 mw Text: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply	Original	PDF	SLD104AU SLD104AU SLD104U, M-259 SLD104U SLD104U equivalent C6802 IEC60825-1 AlGaAs laser diode low noise, 780 nm, 7 mw low noise, 780 nm, 5.6 mm, 5 mw
SiC POWER MOSFET Abstract: sic MOSFET APTMC60TLM14CAG Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	PDF	APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG
Untitled Abstract: No abstract text available Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance	Original	PDF	APTM100A13SCG
b8h100g Abstract: No abstract text available Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and	Original	PDF	MBRB8H100T4G MBRB8H100/D b8h100g
reverse-conducting thyristor Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate	Original	PDF	MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
B8H100G Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and	Original	PDF	MBRB8H100T4G MBRB8H100/D B8H100G B8H100 MBRB8H100T4G B8H1 C146C marking 146C
2 Wavelength Laser Diode Abstract: SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO Text: _ SLD304V SONY, lOOOmW High Power Laser Diode Description Package O utline Unit: mm SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output	OCR Scan	PDF	SLD304V SLD304V 900mW 900mW) 2 Wavelength Laser Diode SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO
Laser Diode 1550 nm Abstract: SLD304 Text: SLD304V SONY, lOOOmW High Power Laser Diode Package Outline Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current	OCR Scan	PDF	SLD304V SLD304V 900mW EleSLD304V --900m Laser Diode 1550 nm SLD304
Untitled Abstract: No abstract text available Text: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline	OCR Scan	PDF	SLD304V SLD304V 900mW

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POWER DIOD Search Results

POWER DIOD Result Highlights (5)

POWER DIOD Price and Stock

IXYS Corporation DSA1-12D

IXYS Corporation DSA1-18D

IXYS Corporation DSA1-16D

POWER DIOD Datasheets Context Search

Untitled

power diodes with V-I characteristics

NTE5700

SE 7889

L8411

Cree SiC diode die

Untitled

100mw laser diode INGAAs

Fiber-Bragg-Grating

150C1K

AC-DC Controllers

b8h100g

SLD104U

SLD301V-1

APT0601

SLD104U

SiC POWER MOSFET

Untitled

b8h100g

reverse-conducting thyristor

B8H100G

2 Wavelength Laser Diode

Laser Diode 1550 nm

Untitled