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    POWER AMPLIFIER KITS Search Results

    POWER AMPLIFIER KITS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER KITS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power, high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n


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    PDF SST12LP19E SST12LP19E 11b/g/n DS70005041C

    AN887

    Abstract: APP887 LQP10A1N0C00 MAX2240
    Text: Maxim > App Notes > Wireless and RF Keywords: power amplifier, nonlinear power amplifier, PA, RF, lumped components, lump, Bluetooth, HomeRF, 802.11, FSK May 01, 2002 APPLICATION NOTE 887 REP032: Lumped element output match for the MAX2240 nonlinear 2.45GHz power amplifier PA


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    PDF REP032: MAX2240 45GHz 131kB) 20dBm com/an887 AN887, APP887, AN887 APP887 LQP10A1N0C00

    SST12LP19E-QX6E

    Abstract: No abstract text available
    Text: 2.4 GHz High-Gain, High-Efficiency Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power, high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n


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    PDF SST12LP19E SST12LP19E 11b/g/n DS70005041D SST12LP19E-QX6E

    500w power amplifier circuit diagram

    Abstract: 500w power rf linear amplifier circuit diagram LM351 op amp schematic rf Power supply 500w 1000w power amplifier circuit diagram 500w amplifier diagram LM351 data sheet LM351 pin diagram SCHEMATIC 1000w power amp amp linear digital 1000w rf
    Text: CLC5523 Low-Power, Variable Gain Amplifier General Descriptions Features The CLC5523 is a low power, wideband, DC-coupled, voltagecontrolled gain amplifier. It provides a voltage-controlled gain block coupled with a current feedback output amplifier. High


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    PDF CLC5523 CLC5523 250MHz 800V/ms, 135mW drivi37-7018 500w power amplifier circuit diagram 500w power rf linear amplifier circuit diagram LM351 op amp schematic rf Power supply 500w 1000w power amplifier circuit diagram 500w amplifier diagram LM351 data sheet LM351 pin diagram SCHEMATIC 1000w power amp amp linear digital 1000w rf

    SST12LP18E-QX8E-K

    Abstract: ds75008a
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP18E A Microchip Technology Company Product Brief The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n applications. It typically provides


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    PDF SST12LP18E SST12LP18E 11b/g/n DS75008A SST12LP18E-QX8E-K ds75008a

    Untitled

    Abstract: No abstract text available
    Text: WM9010 Low Power Class G Stereo Headphone Amplifier LOW COST HEADPHONE AMPLIFIER IN A SMALL PACKAGE THAT DELIVERS AN OUTSTANDING LISTENING EXPERIENCE FOR PORTABLE AUDIO DEVICES. WM9010 is a low power, capless Class G stereo headphone amplifier designed for


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    PDF WM9010 WM9010 PO-FL-9010-09/10

    CATV Amplifier Application

    Abstract: applications of sweep circuits AN799 APP799 MAX3510
    Text: Maxim > App Notes > Wireless and RF Keywords: CATV, CATV amplifier, upstream amplifier, power amplifier, harmonic distortion, third-order distortion, single-tone harmonic Sep 07, 2001 APPLICATION NOTE 799 REP029: MAX3510 cable upstream amplifier harmonic distortion


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    PDF REP029: MAX3510 55MHz 55MHz. li18kB) com/an799 AN799, APP799, CATV Amplifier Application applications of sweep circuits AN799 APP799

    SST12LP07

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 A Microchip Technology Company Data Sheet The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good


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    PDF SST12LP07 SST12LP07 16-contact 29tioned DS75033A

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier Module SST12LP08A A Microchip Technology Company Product Brief The SST12LP08A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for linear high-power applications


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    PDF SST12LP08A SST12LP08A DS75013A

    SST12LP08

    Abstract: SST12LP08-QX6E SST12LP08-QXBE RF MODULE CIRCUIT DIAGRAM dect 12-Contact DS7501
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier Module SST12LP08 A Microchip Technology Company Product Brief The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for linear high-power applications with


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    PDF SST12LP08 SST12LP08 11b/g 12-contact DS75014A SST12LP08-QX6E SST12LP08-QXBE RF MODULE CIRCUIT DIAGRAM dect DS7501

    LM351 op amp

    Abstract: LM351 op-amp integrator LM351 op-amp LM351 op amp pin diagram CLC404 CLC409 CLC425 CLC5523 CLC5523I CLC5523IM
    Text: N CLC5523 Low-Power, Variable Gain Amplifier General Descriptions Features The CLC5523 is a low power, wideband, DC-coupled, voltagecontrolled gain amplifier. It provides a voltage-controlled gain block coupled with a current feedback output amplifier. High impedance inputs and minimum dependence of bandwidth


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    PDF CLC5523 CLC5523 250MHz 135mW LM351 op amp LM351 op-amp integrator LM351 op-amp LM351 op amp pin diagram CLC404 CLC409 CLC425 CLC5523I CLC5523IM

    LM351 op amp

    Abstract: LM351 op-amp LM351 op-amp integrator LM351 op amp pin diagram LM351 CLC404 CLC409 CLC425 LM351 for CLC5523I
    Text: N CLC5523 Low-Power, Variable Gain Amplifier General Descriptions Features The CLC5523 is a low power, wideband, DC-coupled, voltagecontrolled gain amplifier. It provides a voltage-controlled gain block coupled with a current feedback output amplifier. High impedance inputs and minimum dependence of bandwidth


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    PDF CLC5523 CLC5523 250MHz 135mW LM351 op amp LM351 op-amp LM351 op-amp integrator LM351 op amp pin diagram LM351 CLC404 CLC409 CLC425 LM351 for CLC5523I

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5


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    PDF SST12LP15A SST12LP15A 16contact DS75056A

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency


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    PDF SST12LP15B SST12LP15B 16-contact 12-contact DS75029B

    TDK common mode choke notes

    Abstract: No abstract text available
    Text: 19-3457; Rev 2; 2/07 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    PDF MAX9701 TDK common mode choke notes

    12-Contact

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency


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    PDF SST12LP15B SST12LP15B 16-contact 12-contact DS75029A

    SST12CP11

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the


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    PDF SST12CP11 SST12CP11 DS75054A

    abstract of power amplifier

    Abstract: schematics for a PA amplifier AN456 rf amplifier application notes tdma abstract APP456 MAX2265 amplifier rf a appnote
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, wireless, power amplifier, PA, transmitter, cdma, tdma, pae, rfics, rf ics, rf ic Nov 01, 2000 APPLICATION NOTE 456 CDMA Power Amplifier PA for Cellular IS-95 Ultra-Low Cost Applications Abstract: Tune MAX2265 power amplifier for IS-95 requirements in the cellular band. Target specs are 28dB


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    PDF IS-95 MAX2265 28dBm -45dBc MAX2265 com/an456 MAX2265: AN456, abstract of power amplifier schematics for a PA amplifier AN456 rf amplifier application notes tdma abstract APP456 amplifier rf a appnote

    SST11LP11-QVC

    Abstract: rf power amplifier transistor with s-parameters SST11LP11 SST11LP11-QVCE SST11LP11-QVC-K GP111
    Text: 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications SST11LP114.9-5.8 GHz High-Linearity Power Amplifier FEATURES: APPLICATIONS: • Gain: – ~24 dB gain across the 4.9-5.8 GHz band • High linear output power: – ~25 dBm P1dB


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    PDF SST11LP11 SST11LP114 QAM/54 16-contact S71284-00-000 SST11LP11-QVC rf power amplifier transistor with s-parameters SST11LP11 SST11LP11-QVCE SST11LP11-QVC-K GP111

    SST11LP11

    Abstract: SST11LP11-QVC SST11LP11-QVCE SST11LP11-QVC-K
    Text: 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications SST11LP114.9-5.8 GHz High-Linearity Power Amplifier FEATURES: APPLICATIONS: • Gain: – ~24 dB gain across the 4.9-5.8 GHz band • High linear output power: – ~25 dBm P1dB


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    PDF SST11LP11 SST11LP114 QAM/54 16-contact S71284-00-000 SST11LP11 SST11LP11-QVC SST11LP11-QVCE SST11LP11-QVC-K

    Untitled

    Abstract: No abstract text available
    Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire


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    PDF SST11LP12 SST11LP12 16-contact DS75047A

    SST12LP15B

    Abstract: Silicon Storage Technology
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B A Microchip Technology Company Product Brief The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency


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    PDF SST12LP15B SST12LP15B 16-contact DS75005B Silicon Storage Technology

    HT40

    Abstract: "channel estimation"
    Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire


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    PDF SST11LP12 SST11LP12 16-contact DS75047A HT40 "channel estimation"

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C A Microchip Technology Company Data Sheet The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.Easily configured for high-power applications with good power-added efficiency, it typically provides 32 dB gain with 29% PAE @


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    PDF SST12LP14C SST12LP14C 16-tioned DS75034A