Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER AMPLIFIER 2SC5359 2SA1987 TRANSISTOR Search Results

    POWER AMPLIFIER 2SC5359 2SA1987 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER 2SC5359 2SA1987 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1987 2SC5359

    Untitled

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1987 2SC5359

    Untitled

    Abstract: No abstract text available
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5359 2SA1987

    transistor 2SC5359

    Abstract: 100-W 2-21F1A 2SA1987 2SC5359
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1987 2SC5359 transistor 2SC5359 100-W 2-21F1A 2SA1987 2SC5359

    2Sa1987

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1987 2SC5359 2-21F1A 2Sa1987

    Untitled

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1987 2SC5359 2-21F1A

    100-W

    Abstract: 2-21F1A 2SA1987 2SC5359
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1987 2SC5359 100-W 2-21F1A 2SA1987 2SC5359

    Untitled

    Abstract: No abstract text available
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5359 2SA1987

    transistor 2SC5359

    Abstract: 2SC5359 100-W 2-21F1A 2SA1987
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C


    Original     		PDF 2SC5359 2SA1987 transistor 2SC5359 2SC5359 100-W 2-21F1A 2SA1987

    transistor 2Sc5359

    Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C


    Original     		PDF 2SC5359 2SA1987 transistor 2Sc5359 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987

    transistor 2SC5359

    Abstract: 2SC5359
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C


    Original     		PDF 2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359

    2SA1987 2SC5359

    Abstract: 2SC5359 100W AUDIO AMPLIFIER 2SA1987
    Text: Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC5359 2SA1987 2SA1987 2SC5359 2SC5359 100W AUDIO AMPLIFIER 2SA1987

    transistor 2SC5359

    Abstract: 2SC5359
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359

    2SA1987 2SC5359

    Abstract: 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
    Text: SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC5359 2SA1987 2SA1987 2SC5359 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn

    100W AUDIO ic AMPLIFIER

    Abstract: 2SA1987 2SC5359 100w audio amplifier 2SA1987 2SC5359
    Text: Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio


    Original     		PDF 2SA1987 2SC5359 -230V; 100W AUDIO ic AMPLIFIER 2SA1987 2SC5359 100w audio amplifier 2SA1987 2SC5359

    2SA1987 2SC5359

    Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
    Text: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1987 2SC5359 -230V; 2SA1987 2SC5359 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359

    2sa1987 transistor equivalent

    Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS


    Original     		PDF 2SA1987 -230V 2SC5359 -230V 2sa1987 transistor equivalent transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 tr 2sA1987

    transistor 2SC5359

    Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SC5359 2SA1987 transistor 2SC5359 tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
    Text: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 2SC53

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SC5359 2SA1987 ----L20

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
    Text: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SA1987 2SC5359 transistor 2SC5359 2-21F1A 2SA1987 power amplifier 2sc5359 2sa1987 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SC5359 2SA1987

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SA1987 2SC5359