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    PNP TRANSISTOR TO-92 BC327 Search Results

    PNP TRANSISTOR TO-92 BC327 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR TO-92 BC327 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3. EMITTER Parameter Value


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    BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA PDF

    BC327

    Abstract: BC328 transistor BC328
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value


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    BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 transistor BC328 PDF

    BC327A

    Abstract: Transistor B C 458
    Text: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol


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    BC327A BC327A Transistor B C 458 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol


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    BC327A BC327A PDF

    BC327

    Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage


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    BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 BC327 equivalent transistor BC328 BC327 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: TO-92 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current -0.8 A ICM: Collector-base voltage BC327 -50 V


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    BC327/ BC328 BC327 BC328 BC327 breakd-45V, -100mA -300mA PDF

    BC327

    Abstract: No abstract text available
    Text: BC327 TO-92 Plastic-Encapsulate Transistor s Transistor PNP TO-92 1.COLLECTOR 2.BASE 3.EMITTER 1 2 3 TYPICAL CHARACTERISTICS -1.0 -1.0 o T A =25 o C T j =25 C V BE (sat)@Ic/I B =10 -0.8 Ic=-500mA -0.6 -0.4 Ic=-300mA -0.2 V VOLTAGE(VOLTS) V CE ,COLLECTOR EMITTER VOLTAGE(VOLTS)


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    BC327 -500mA -300mA -100mA -10mA 100us BC327 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC337/338 1 TO-92  ORDERING INFORMATION Ordering Number


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    BC327/328 BC337/338 BC327L-xx-T92-B BC327G-xx-T92-B BC327L-xx-T92-K BC327G-xx-T92-K BC328L-xx-T92-B BC328G-xx-T92-B BC328L-xx-T92-K BC328G-xx-T92-K PDF

    transistor BC327

    Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


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    BC327/328 BC337/BC338 BC327 BC328 transistor BC327 BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338 PDF

    IC 630

    Abstract: BC327
    Text: DC COMPONENTS CO., LTD. BC327 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter


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    BC327 -500mA, -50mA -300mA -100mA, -300mA, -10mA, 100MHz IC 630 BC327 PDF

    BC327

    Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
    Text: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16


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    BC327 BC328 BC327-16 BC327-25 BC328-16 BC328-25 BC328-40 BC327-40 -10mA, -100mA BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25 PDF

    transistor bc328

    Abstract: TRANSISTOR BC327 equivalent components for transistor bc328 BC327 BC328
    Text: BC327BC328 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC


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    BC327. BC328 BC327 transistor bc328 TRANSISTOR BC327 equivalent components for transistor bc328 BC327 BC328 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC327/328 BC337/338 BC327 BC328 -300mA -10mA, 20MHz QW-R201-038 PDF

    TRANSISTOR BC327-40

    Abstract: bc327 TRANSISTOR
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC327/328 BC337/338 BC327 BC328 QW-R201-038 TRANSISTOR BC327-40 bc327 TRANSISTOR PDF

    BC307

    Abstract: BC327 BC328 BC338 BC327 W 75
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC307 BC327 BC328 BC338 BC327 W 75 PDF

    BC307

    Abstract: BC338 BC327 BC328
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC307 BC338 BC327 BC328 PDF

    BC327

    Abstract: BC328
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC327 BC328 PDF

    bc338

    Abstract: No abstract text available
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC327 bc338 PDF

    bc337 fairchild

    Abstract: BC337 pnp transistor
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC32ugh bc337 fairchild BC337 pnp transistor PDF

    BC307

    Abstract: 2001 PNP TO-92
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC32Product BC32716TA BC307 2001 PNP TO-92 PDF

    bc327 pnp

    Abstract: BC327
    Text: BC327 PNP EPITAXIAL PLANAR TRANSISTOR Features KM h H Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,


    OCR Scan
    BC327 625mW MIL-STD-202, DS21708 BC327 bc327 pnp PDF

    BC337 pnp transistor

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage


    OCR Scan
    BC327/328 BC337/BC338 SC327 BC328 BC327 BC337 pnp transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data_


    OCR Scan
    BC327 625mW MIL-STD-202, DS21708 PDF

    BC327

    Abstract: DS21
    Text: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data


    OCR Scan
    BC327 625mW MIL-STD-202, BC327 DS21 PDF