MBT3946DW
Abstract: No abstract text available
Text: MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous
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MBT3946DW
OT-363
SC-88)
MBT3946DW
OT-363
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Untitled
Abstract: No abstract text available
Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to
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NSM11156DW6T1G
NSM11156DW6T1G
SC-88/SOT-363
NSM11156DW6/D
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419B-02
Abstract: NSM11156DW6T1G marking .544 sot363
Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to
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NSM11156DW6T1G
NSM11156DW6T1G
SC-88/SOT-363
NSM11156DW6/D
419B-02
marking .544 sot363
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MBT3946DW
Abstract: MMBT3904WH audio output TRANSISTOR PNP 1N916 MMBT3904W
Text: MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon 2 3 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous
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MBT3946DW
OT-363
SC-88)
MBT3946DW
OT-363
MMBT3904WH
audio output TRANSISTOR PNP
1N916
MMBT3904W
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MBT3946DW
Abstract: audio output TRANSISTOR PNP 1N916 MMBT3904W
Text: MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon 2 3 1 6 5 1 * “G” Lead Pb -Free 4 5 6 2 4 3 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP)
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MBT3946DW
OT-363
SC-88)
OT-363
MBT3946DW
audio output TRANSISTOR PNP
1N916
MMBT3904W
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l04 ic code
Abstract: marking code L06 marking L06 CMLT3906E CMLT3946 marking l04
Text: Central CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT3904E two single NPN , CMLT3906E (two single PNP), and CMLT3946E (one each NPN and PNP
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CMLT3904E
CMLT3906E
CMLT3946E
CMLT3904E
CMLT3906E
CMLT3946E
OT-563
100MHz
l04 ic code
marking code L06
marking L06
CMLT3946
marking l04
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Untitled
Abstract: No abstract text available
Text: MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon 2 3 1 6 5 1 * “G” Lead Pb -Free 4 5 6 2 4 3 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP)
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MBT3946DW
OT-363
SC-88)
OT-363
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c4g TRANSISTOR
Abstract: transistor C4G CMLT3906EG X10-4 CMLT3904EG MARKING code 46g MARKING code 46g sot 563
Text: Central CMLT3904EG NPN CMLT3906EG PNP CMLT3946EG NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT3904EG two single NPN , CMLT3906EG (two single PNP), and CMLT3946EG (one each NPN and PNP complementary)
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CMLT3904EG
CMLT3906EG
CMLT3946EG
CMLT3904EG
CMLT3906EG
CMLT3946EG
OT-563
CMLT3904EG:
CMLT3906EG:
c4g TRANSISTOR
transistor C4G
X10-4
MARKING code 46g
MARKING code 46g sot 563
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PEMD4
Abstract: PEMB4 PEMH4 PUMD4
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMB4; PUMB4 PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 2001 Sep 14 2003 Oct 15 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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SCA75
R75/04/pp8
PEMD4
PEMB4
PEMH4
PUMD4
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PEMD6
Abstract: PEMB3 PEMH7 PUMB3
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMB3; PUMB3 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2001 Sep 19 2003 Oct 15 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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SCA75
R75/02/pp8
PEMD6
PEMB3
PEMH7
PUMB3
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CMLT3906EG
Abstract: transistor C4G CMLT3904E CMLT3906E CMLT3946E marking L06
Text: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS SOT-563 CASE ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)
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CMLT3904E
CMLT3904EG*
CMLT3906E
CMLT3906EG*
CMLT3946E
CMLT3946EG*
OT-563
x10-4
CMLT3904E
CMLT3906EG
transistor C4G
marking L06
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PEMB1
Abstract: PEMH1
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMB1; PUMB1 PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Product specification Supersedes data of 2001 Sep 13 2003 Oct 15 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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SCA75
R75/02/pp8
PEMB1
PEMH1
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PUMD9
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMB9; PUMB9 PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Feb 03 2003 Oct 03 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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SCA75
R75/02/pp8
PUMD9
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PEMD13
Abstract: B5 MARKING PEMB1
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMB13; PUMB13 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2002 Jan 14 2003 Dec 11 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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PEMB13;
PUMB13
PEMB13
SCA75
R75/02/pp8
PEMD13
B5 MARKING
PEMB1
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PEMD13
Abstract: PEMB13 PEMH13 PUMB13 PUMD13 PUMH13 PEMB1
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMB13; PUMB13 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Dec 11 2004 Apr 15 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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PEMB13;
PUMB13
SCA76
R75/03/pp8
PEMD13
PEMB13
PEMH13
PUMB13
PUMD13
PUMH13
PEMB1
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Untitled
Abstract: No abstract text available
Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors PNP NPN COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR
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BCX17LT1G,
BCX18LT1G,
BCX19LT1G,
BCX17,
BCX19
BCX18
OT-23
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PEMB19
Abstract: PEMD19 PEMH19 PUMB19 PUMD19 PUMH19 PEMB1
Text: PEMB19; PUMB19 PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors. Table 1: Product overview Type number Package Philips
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PEMB19;
PUMB19
PEMB19
OT666
PEMD19
PEMH19
OT363
SC-88
PUMD19
PEMB19
PEMD19
PEMH19
PUMB19
PUMD19
PUMH19
PEMB1
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PUMB15
Abstract: PUMH15
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB15 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Nov 07 2004 Apr 14 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors;
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MBD128
PUMB15
SCA76
R75/02/pp7
PUMH15
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2N924
Abstract: 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025
Text: je m lt r o n ic r sem iconductors s s S em itronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Polarity tm Power Dissipation @ 25°C mW t . ij (°C) BVcbo (volts) PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
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2n327a
2n327b
2n32ba
2n328b
2n329a
2N924
2N936
2N1226
2N3346
2N1623
2N923
2N1221
2N1240
2N925
2N1025
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2N3637S
Abstract: 1000 volt pnp transistor 2N3634S 2N3635S 2N3636S 2N4928S 2N4929S 2N4930S 2N4931S BC140
Text: TO-39 PNP TRANSISTORS HIGH VOLTAGE AMPLIFIER AND SWITCH Device Type Polarity v CEO Volts lç max. (mA) PNP PNP PNP PNP PNP PNP PNP PNP 140 140 175 175 100 150 200 250 1000 1000 1000 1000 100 500 500 500 Device Type Polarity v CEO (Vdc) I q max. (mA) BC160
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2N3634S
2N3635S
2N3636S
2N3637S
2N4928S
2N4929S
2N4930S
2N4931S
BC160
BC161
1000 volt pnp transistor
BC140
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transistor potencia
Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP
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fl531BÃ
BC546
BC547
BC548
BC549
BC556
BC557
PA6015
PB6015
PA6025
transistor potencia
t092
ebc Transistor
BC558 ebc
CEB npn
PB6025
PA6014
transistores
BF494
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BD282
Abstract: BD285 BD286 BD283 BD284 BD281 B0283 NPN TRANSISTORS LIST BC461 2N5322 complementary npn-pnp
Text: Sem iconductors Transistors - NPN/PNP Complementary NPN/PNP Complementary Transistors R E FE R E N C E T A B L E Max P toi @ T c = 2 5 'C W Code Polarity BC440 BC460 NPN PNP BC441 BC481 N PN PNP } 10 } 10 BD281 BD282 N PN PNP } BD283 BD284 NPN PNP } BD285
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BC440
BC460
BC441
BC461
BD281
BD282
BD283
BD284
BD285
BD286
BD282
BD286
BD284
B0283
NPN TRANSISTORS LIST
BC461 2N5322
complementary npn-pnp
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2N217s
Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025
Text: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP
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2N327A
2N327B
2N326A
2N328B
2N329A
2N32SB
2N330A
2N923
2N924
2N925
2N217s
2N1028
2N936
2NJ228
2n1854
2N3346
2N16S5
2N1025
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transistor pnp 3906
Abstract: CMKT3906 be marking pnp
Text: Central" CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini" DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS FEATURES: • ULTRAmini SPACE SAVING PACKAGE • TWO NPN 3904 or TWO PNP (3906) TRANSISTORS IN A SINGLE PACKAGE
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CMKT3904
CMKT3906
CMKT3946
CMKT3904:
CMKT3906:
CMKT3946:
CMKT3904
CMKT3906
CMKT3946
OT-363
transistor pnp 3906
be marking pnp
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