MJE350
Abstract: No abstract text available
Text: ON Semiconductort MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON
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MJE350
r14525
MJE350/D
MJE350
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MJE350
Abstract: No abstract text available
Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON
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MJE350
r14525
MJE350/D
MJE350
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON
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MJE350
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MJE350 b c e
Abstract: Power Transistors TO-126 Case MJE350
Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
MJE350 b c e
Power Transistors TO-126 Case
MJE350
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8805 VOLTAGE REGULATOR
Abstract: MJE350 b c e MJE350 pnp mje350
Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
8805 VOLTAGE REGULATOR
MJE350 b c e
MJE350
pnp mje350
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TRANSISTORS BJT list
Abstract: power BJT 2N6181 power BJT PNP "Power BJT"
Text: 2N6181 Si PNP Power BJT 2.50 Transistors Bipolar Silicon PNP Power Transistors Ame. Page 1 of 2 Enter Your Part # Home Part Number: 2N6181 Online Store 2N6181 Diodes Si PNP Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N6181
2N6181
com/2n6181
TRANSISTORS BJT list
power BJT
power BJT PNP
"Power BJT"
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PNP TRANSISTOR "SOT89"
Abstract: SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w
Text: PNP ᒦൈहࡍྯ PNP Medium Power Transistor PNP Medium Power Transistor FHFCX593 PNP ᒦൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX493 SOT-89 PIN ASSIGNMENT 引腳說明
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FHFCX593
OT-89
FHFCX493
OT-89
FHFCX593
Char20
-250mA
-25mA
-500mA
PNP TRANSISTOR "SOT89"
SOT-89
TRANSISTOR PNP
PNP TRANSISTOR SOT89
transistor PNP 5 w
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2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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MJE350
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SC1419
TIP54
MJ1000
MJ15024 MJ15025
2SC1943
SE9302
MJE2482
2SD675
BU326
BU108
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NTE131MP
Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.
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NTE131
NTE155
100mA
NTE131MP
NTE155
NTE131
germanium transistors NPN
Germanium power
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PNP Transistors
Abstract: No abstract text available
Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation
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40362L
40362L
O-205AD/TO-39
07-Sep-2010
PNP Transistors
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BD234
Abstract: PNP POWER TRANSISTOR SOT-32
Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.
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BD234
BD234
OT-32
OT-32
PNP POWER TRANSISTOR SOT-32
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40394
Abstract: PNP Transistors MD14
Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation
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07-Sep-2010
40394
PNP Transistors
MD14
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier. APPLICATION * Low frequency power amplifier
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2SB647
2SB647
2SB647L-x-T9N-B
2SB647G-x-T9N-B
2SB647L-x-T9N-K
2SB647G-x-T9N-K
O-92NL
QW-R211-010
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BD234
Abstract: SGS-Thomson
Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3
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BD234
BD234
OT-32
OT-32
SGS-Thomson
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Untitled
Abstract: No abstract text available
Text: 2N5022 Si PNP Power BJT 8.90 Transistors Bipolar Silicon PNP Power. 1 of 2 Home Part Number: 2N5022 Online Store 2N5022 Diodes Si PNP Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N5022
com/2n5022
2N5022
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2N1183B
Abstract: No abstract text available
Text: 2N1183B Ge PNP Power BJT 19.98 Transistors Bipolar Germanium PNP Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1183B Online Store 2N1183B Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1183B
2N1183B
com/2n1183b
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2N1039
Abstract: No abstract text available
Text: 2N1039 Ge PNP Power BJT 6.75 Transistors Bipolar Germanium PNP Power Transistors. Page 1 of 1 Enter Your Part # Home Part Number: 2N1039 Online Store 2N1039 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1039
2N1039
com/2n1039
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2N924
Abstract: 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025
Text: je m lt r o n ic r sem iconductors s s S em itronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Polarity tm Power Dissipation @ 25°C mW t . ij (°C) BVcbo (volts) PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
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2n327a
2n327b
2n32ba
2n328b
2n329a
2N924
2N936
2N1226
2N3346
2N1623
2N923
2N1221
2N1240
2N925
2N1025
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Untitled
Abstract: No abstract text available
Text: ?M VE5 MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 VOLTS .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability. •
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MJEC350
3kA/10kA/10kA
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Untitled
Abstract: No abstract text available
Text: ftnasr Back to Bipolar Power Transistors MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP
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3kA/10kA/10kA
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MP3731
Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed
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MP2100A,
MP2200A,
MP2300A,
MP2400A
MP2000A
MP3730
MP3731
MP3730
MP3731
MP2200A
O446
Motorola germanium transistor pnp
MP2100A
MP2300A
MP2400A
germanium transistors PNP
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40X40
Abstract: MJEC350
Text: ÍJhN BF MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability.
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MJEC350
VEB-30Vdc.
lc-01
40X40
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JE350
Abstract: je 350
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
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MJE350
O-22SAA
JE350
je 350
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and
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BD234
OT-32
BD234
OT-32
O-126)
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