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    PN06L06

    Abstract: No abstract text available
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 PN06L06 PN06L06

    PN06L06

    Abstract: No abstract text available
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 PN06L06 PN06L06