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    PN SMD TRANSISTOR Search Results

    PN SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PN SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PI N CONFIGURATI ON N PN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code = 3E VHF/UHF Transistor


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    PDF CMBTH10 OT-23 C-120 CMBTH10Rev190402E

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON N PN 1 = BASE SOT-23 Formed SMD Package 2 = EMITTER 3 = COLLECTOR 3 For Lead Free Parts, Device Part #


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    PDF BC846, BC847, BC848 OT-23 BC846 BC846A BC846B BC847 BC847A BC847B

    TLP521-1BL-SW

    Abstract: Isocom Components E72HA2.2B-L
    Text: ISOCOM COMPONENTS TLP521-1BL-SW, TLP521-2BL-SW, TLP521-4BL-SW DRAFT DESCRIPTION The TLP521-1BL-SW, TLP521-2BL-SW and TLP521-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In


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    PDF TLP521-1BL-SW, TLP521-2BL-SW, TLP521-4BL-SW TLP521-2BL-SW TLP521-4BL-SW TLP521-1BL-SW TLP521-2BL-SW 5300VRMS E91231 TLP521-1BL-SW Isocom Components E72HA2.2B-L

    TLP621 smd

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS TLP621-1BL-SW, TLP621-2BL-SW, TLP621-4BL-SW DRAFT DESCRIPTION The TLP621-1BL-SW, TLP621-2BL-SW and TLP621-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In


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    PDF TLP621-1BL-SW, TLP621-2BL-SW, TLP621-4BL-SW TLP621-2BL-SW TLP621-4BL-SW TLP621-1BL-SW TLP621-2BL-SW 5300VRMS E91231 TLP621 smd

    Untitled

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS ICPL2530, ICPL2531 DESCRIPTION The ICPL2530 and ICPL2531 dual channel devices each consists of an infrared emitting diode optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output transistor collector increases the speed


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    PDF ICPL2530, ICPL2531 ICPL2530 ICPL2531 5000VRMS

    5-pin smd Voltage Regulators

    Abstract: RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH
    Text: SPACE QUALIFIED PRODUCTS RADIATION HARD AMPLIFIERS Part type RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07 RH07CDICE RH1013M RH1013DICE RH1014M MSK114RH RH108A RH108ADICE RH27AE RH27E RH27C RH27CDICE RH1056A RH1056DICE RH1498M RH1498DICE MSK198RH


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    PDF RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07CDICE RH1013M RH1013DICE RH1014M 5-pin smd Voltage Regulators RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH

    network resistor

    Abstract: 0R05 resistor network SIL smd resistor 1218
    Text: V is hay Sfe r nice w w w. v i s h a y. c o m S e l ect o r G ui d e thin film resistors/networks resistive pr o d ucts V I S HAY I N T E R T E C H N OLO G Y , I N C . Thin Film Resistors • SMD chip resistors bare chips and wraparound • SIL resistor


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    PDF hours/Pn/70 10ppm/ VMN-SG2119-0708 network resistor 0R05 resistor network SIL smd resistor 1218

    Untitled

    Abstract: No abstract text available
    Text: Web Site: www.parallax.com Forums: forums.parallax.com Sales: [email protected] Technical: [email protected] Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Propeller Project Board USB (#32810) Parallax’s Propeller Project Board USB is a low cost solution for permanent projects using the multicore


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    PDF 175mm) 473mm)

    transistor smd marking NE

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    PDF CMBT847 100uA, C-120 transistor smd marking NE

    NB smd transistor

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    PDF CMBA847 100uA, C-120 NB smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    PDF CMBT9014 OT-23 100uA, C-120

    TRANSISTOR SMD 9013

    Abstract: equivalent of transistor 9013 9013 SMD CMBT9013
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    PDF OT-23 100uA, C-120 TRANSISTOR SMD 9013 equivalent of transistor 9013 9013 SMD CMBT9013

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


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    PDF CMBT2484 C-120

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 smd code marking SOT223 MINI POWER MOSFET SMD TRANSISTOR MARKING BF transistor 313 smd
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner ● Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies e.g. with molded interconnection devices call for sustained reduction in


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    817 Optocoupler

    Abstract: 4 pin optocoupler 817 optocoupler 817 817 OPTO-coupler 4 pin optocoupler C 817 optocoupler A 817 optocoupler C 817 optocoupler C 814 CNY 42 optocoupler smd Optocoupler 201
    Text: Avago Technologies Optoisolation Product Part Number System Application Bulletin 102 Introduction The following information is provided to assist in the understanding of the Avago Technologies Optocouplers part number nomenclature identification. This document is intended as a general guide to the partnumbering system employed by each family.


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    PDF SO-16 EN60747 5989-0341EN AV01-0683EN 817 Optocoupler 4 pin optocoupler 817 optocoupler 817 817 OPTO-coupler 4 pin optocoupler C 817 optocoupler A 817 optocoupler C 817 optocoupler C 814 CNY 42 optocoupler smd Optocoupler 201

    sj 2025

    Abstract: CAP SMD X7R 100NF 50V 10 ic sj 2025 ak300/2 Diode SMD SJ 19 0603 100nF/50V avx Diode SMD SJ 24 Diode SMD SJ 7 SMD TRANSISTOR R90 TRANSISTOR ECG 69
    Text: Freescale Semiconductor User’s Guide Document Number: KT33730UG Rev. 1.0, 9/2009 KIT33730EKEVBE Evaluation Board Figure 1. KIT33730EKEVBE Evaluation Board Table of Contents 1 Kit Contents / Packing List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    PDF KT33730UG KIT33730EKEVBE sj 2025 CAP SMD X7R 100NF 50V 10 ic sj 2025 ak300/2 Diode SMD SJ 19 0603 100nF/50V avx Diode SMD SJ 24 Diode SMD SJ 7 SMD TRANSISTOR R90 TRANSISTOR ECG 69

    CMPA801B025

    Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


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    PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack

    CMPA801B025F

    Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


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    PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f

    BDS78

    Abstract: No abstract text available
    Text: Philips Components Data sheet status P r o d u c t s p e c ific a t io n date of issue A p ril 1991 BDS202/204/78 PN P silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors in a miniature SMD envelope


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    PDF BDS202/204/78 OT223 OT223) BDS201/203/77. BDS202 BDS204 BDS78 0034b04 003MbDS BDS78

    SMD M1A

    Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
    Text: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­


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    PDF OT-23 OT-23 BF536 BF550 BF569 BF579 BF660 BF747 BF767 BF824 SMD M1A marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 smd transistors smd code marking sot23 smd transistors code

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


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    PDF BDS943/945/947 OT223 OT223) BDS944/946/948. BDS943 BDS945 BDS947cation D034b3b btS3T31

    lvdt interface WITH ADC

    Abstract: 883B IC LVDT CMOS spice model
    Text: Other Military Products— Selection Guides Analog I/O Port Model Resolution Bits Conv Time max fis SHA BW kHz typ Settling Time xs Ref. Volt Int/Ext Bus Interface Qual Level AD7569 8 2 500 1 Int 8 , (jlP 883B, SMD Comments CMOS, Complete I/O Port with DAC.


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    PDF AD7569 AD1341 AD1334 12-Bit 883Bcted. AD637 AD536A AD598 AD590 lvdt interface WITH ADC 883B IC LVDT CMOS spice model

    MARKING ZX SOT-23

    Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
    Text: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches


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    PDF OT-23 350mW CMPT8099 CMPT930 CMPT2222A CMPT3904 CMPT4401 CMPT8599 SMPT29 500ns MARKING ZX SOT-23 BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323

    SMD MARKING CODE C2U

    Abstract: smd code marking C2G
    Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX


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    PDF OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A BC857C BC858 BC858A SMD MARKING CODE C2U smd code marking C2G