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Catalog Datasheet	MFG & Type	Document Tags	PDF
MX29F1610 Abstract: 29F1610-12 00F1H Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture	Original	MX29F1610 16M-BIT 120/150ns 150ms MX29F1610 29F1610-12 00F1H	PDF
00F1H Abstract: No abstract text available Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles	OCR Scan	MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H	PDF
Q20G Abstract: 00F1H MX-2S Text: is M « r r c a M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPRO M commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture - 16 equal sectors of 128k bytes each	OCR Scan	100/120/150ns -100mA 100mA 100ns Q20G 00F1H MX-2S	PDF
00F1H Abstract: No abstract text available Text: TM M X29F161Q MACftOMX, INC. 1 B IS A -B n tS M x 8 / 1 M x 1 B C M 0 8 S IN G L E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 100,000 write/erase cycles	OCR Scan	X29F161Q 120ns X29F1610 -100mA 100mA 00F1H	PDF