25N250
Abstract: IXBX25N250
Text: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBX25N250
PLUS247TM
25N250
IXBX25N250
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34N80
Abstract: IXFN34N80 ixfx34n80
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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34N80
247TM
34N80
IXFN34N80
ixfx34n80
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35n120au1
Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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35N120AU1
35n120au1
IXSX35N120AU1
IGBT 500V 35A
35N120AU
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IXGK55N120A3H1
Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
Text: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGK55N120A3H1
IXGX55N120A3H1
IC110
O-264
338B2
IXGK55N120A3H1
IXGX55N120A3H1
IXGX55N120
PLUS247
IC110
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IXGX320N60A3
Abstract: IXGK320N60A3 PLUS247
Text: IXGK320N60A3 IXGX320N60A3 GenX3TM 600V IGBTs VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK320N60A3
IXGX320N60A3
O-264
IC110
320N60A3
3-08-A
IXGX320N60A3
IXGK320N60A3
PLUS247
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IXBX64N250
Abstract: IC100 IXBK64N250 PLUS247
Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK64N250
IXBX64N250
IC110
O-264
IC100
64N250
5-10-A
IXBX64N250
IC100
IXBK64N250
PLUS247
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000
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24N100
24N100
247TM
O-264
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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120N20
120N20
ID104
247TM
O-264
125OC
728B1
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Untitled
Abstract: No abstract text available
Text: IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXK110N65B4H1
IXXX110N65B4H1
IC110
10-30kHz
O-264
IF110
110N65B4H1
02-04-13-B
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120N20
Abstract: No abstract text available
Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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120N20
120N20
ID104
247TM
O-264
125OC
728B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS
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180N06
180N06
247TM
O-264
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DSA003710
Abstract: No abstract text available
Text: Advance Technical Information Linear Power MOSFET IXTK17N120L With Extended FBSOA IXTX17N120L VDSS ID25 N-Channel Enhancement Mode RDS on = 1200 = 17 ≤ 0.99 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR
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IXTK17N120L
IXTX17N120L
O-264
PLUS247
O-264)
PLUS247TM)
Featur91
338B2
DSA003710
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ixfk74n50p2
Abstract: 74N50P2
Text: IXFK74N50P2 IXFX74N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 74A Ω 77mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFK74N50P2
IXFX74N50P2
O-264
PLUS247
74N50P2
74N50P2
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol
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21N100Q
21N100Q
247TM
O-264
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IXFK38N80Q2
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q2-Class VDSS ID25 IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFK38N80Q2
IXFN38N80Q2
IXFX38N80Q2
250ns
O-264
IXFK38N80Q2
38N80Q2
8-08-A
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs VCES = 600V IC90 = 120A VCE sat ≤ 2.1V IXGK120N60B IXGX120N60B TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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IXGK120N60B
IXGX120N60B
O-264
120N60B
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Untitled
Abstract: No abstract text available
Text: GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300
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IXGK400N30A3
IXGX400N30A3
10kHz
O-264
IC110
400N30A3
1-18-08-A
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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35N120AU1
150perature
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IXGX320N60A3
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGK320N60A3 IXGX320N60A3 Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK320N60A3
IXGX320N60A3
O-264
IC110
320N60A3
3-08-A
IXGX320N60A3
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IXFX38N80Q2
Abstract: IXFK38N80Q2 38N80 IXFN38N80Q2 PLUS247 SOT227B package
Text: HiPerFETTM Power MOSFETs Q2-Class IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 VDSS ID25 = 800V = 38A Ω ≤ 220mΩ ≤ 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK38N80Q2
IXFN38N80Q2
IXFX38N80Q2
250ns
O-264
IXFK38N80Q2
38N80Q2
8-08-A
IXFX38N80Q2
38N80
IXFN38N80Q2
PLUS247
SOT227B package
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ixgk100n170
Abstract: 100N170 IXGX100N170 PLUS247
Text: Preliminary Technical Information IXGK100N170 IXGX100N170 High Voltage IGBT VCES = 1700V IC90 = 100A VCE sat ≤ 3.0V TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous
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IXGK100N170
IXGX100N170
O-264
100N170
ixgk100n170
IXGX100N170
PLUS247
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IXGK320N60B3
Abstract: IXGX320N60B3 PLUS247 DS100157
Text: Advance Technical Information IXGK320N60B3 IXGX320N60B3 GenX3TM 600V IGBTs VCES = 600V IC25 = 320A VCE sat ≤ 1.60V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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IXGK320N60B3
IXGX320N60B3
O-264
IC110
338B2
IXGK320N60B3
IXGX320N60B3
PLUS247
DS100157
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IXBX64N250
Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
Text: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500
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IXBK64N250
IXBX64N250
O-264
IC110
PLUS247TM
64N250
IXBX64N250
IXBK64N250
64N250
IXBX 64N250
PLUS247
128a
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IXFK30N100Q2
Abstract: IXFX30N100Q2 PLUS247
Text: IXFK30N100Q2 IXFX30N100Q2 HiPerFETTM Power MOSFETs VDSS ID25 = 1000V = 30A Ω ≤ 400mΩ ≤ 300ns RDS on Q2-Class trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK30N100Q2
IXFX30N100Q2
300ns
O-264
30N100Q2
7-08-A
IXFK30N100Q2
IXFX30N100Q2
PLUS247
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