PJ4N3KDW Search Results

PJ4N3KDW Price and Stock

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PanJit Semiconductor PJ4N3KDW_R1_000A1 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	PJ4N3KDW_R1_000A1		2,844			1 - 10 - 100 - 1000 - 10000 -	Get Quote
PanJit Semiconductor PJ4N3KDW_R1_00001 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	PJ4N3KDW_R1_00001		19,123			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	PJ4N3KDW_R1_00001			32 Weeks	18,600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
PanJit Group PJ4N3KDW_R1_00001 MOSFET DIS.100mA 30V N-CH SOT363 SMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	PJ4N3KDW_R1_00001		14,710			1 - 10 $0.11309 100 $0.11309 1000 $0.11309 10000 $0.0927	Buy Now
PanJit Group PJ4N3KDW_R2_00001 MOSFET DIS.100mA 30V N-CH SOT363 SMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	PJ4N3KDW_R2_00001					1 - 10 $0.07759 100 $0.07759 1000 $0.07759 10000 $0.0636	Get Quote

PJ4N3KDW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PJ4N Abstract: No abstract text available Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), [email protected],IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)	Original	PDF
Untitled Abstract: No abstract text available Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference	Original	PDF	OT-363 RB500V-40
Untitled Abstract: No abstract text available Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@1mA=7.0 • RDS(ON), [email protected],IDS@10mA=5.0 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference	Original	PDF	2011/65/EU 2013-REV
PJ4N Abstract: PJ4N3KDW MARKING GA SOT-363 DM800 Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@1mA=7.0Ω • RDS(ON), [email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference	Original	PDF	2002/95/EC OT-363 PJ4N PJ4N3KDW MARKING GA SOT-363 DM800
PJ4N Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), [email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance	Original	PDF	2002/95/EC IEC61249 OT-363 RB500V-40 PJ4N marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW