Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PIN DIODE 12 GHZ Search Results

    PIN DIODE 12 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PIN DIODE 12 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SP4T PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7131 50 Ohm SMA SP4T PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7131 MIL-C-39012 com/sma-female-coaxial-switch-pe7131-p PE7131

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SP3T PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7123 50 Ohm SMA SP3T PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7123 MIL-C-39012 com/sma-female-coaxial-switch-pe7123-p PE7123

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7116 50 Ohm SMA SPDT PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7116 MIL-C-39012 switch-8000-mhz-12000-mhz-1-watt-pe7116-p PE7116

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SPST PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +30 dBm TECHNICAL DATA SHEET PE7109 50 Ohm SMA SPST PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +30 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7109 MIL-C-39012 switch-8000-mhz-12000-mhz-1-watt-pe7109-p PE7109

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SPDT PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7117 50 Ohm SMA SPDT PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7117 MIL-C-39012 com/sma-female-coaxial-switch-pe7117-p PE7117

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SP3T PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7124 50 Ohm SMA SP3T PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7124 MIL-C-39012 sma-sp3t-pin-switch-12000-mhz-18000-mhz-0 5-watt-pe7124-p PE7124

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SPST PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7110 50 Ohm SMA SPST PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7110 MIL-C-39012 com/sma-female-coaxial-switch-pe7110-p PE7110

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA Transfer PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7137 50 Ohm SMA Transfer PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7137 MIL-C-39012 com/sma-female-transfer-switch-pe7137-p PE7137

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA Transfer PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7138 50 Ohm SMA Transfer PIN Diode Switch Operating From 12 GHz to 18 GHz Up To +27 dBm Configuration RF Connector RF Connector Specification Control Connector


    Original     		PDF PE7138 MIL-C-39012 com/sma-female-transfer-switch-pe7138-p PE7138

    Untitled

    Abstract: No abstract text available
    Text: 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 6 GHz To 12 GHz, SMA TECHNICAL DATA SHEET PE70A2002 The PE70A2002 is an Analog Controlled 60 dB Pin Diode Attenuator operating from 6 GHz to 12 GHz, and over a temperature range of -55 Deg C to + 85 Deg C. The Input/Output RF Connectors are Removable SMA Female. The control connector is


    Original     		PDF PE70A2002 PE70A2002 tenuator-pin-diode-12-ghz-sma-pe70a2002-p

    pin photodiode 10 ghz

    Abstract: lucent comcode Lucent receiver pin photodiode 20 ghz R2560A R2560A023 PIN photodiode ps pin Photodiode 2 GHz
    Text: Preliminary Data Sheet August 2000 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode


    Original     		PDF R2560A DS00-279OPTO pin photodiode 10 ghz lucent comcode Lucent receiver pin photodiode 20 ghz R2560A023 PIN photodiode ps pin Photodiode 2 GHz

    pin photodiode 10 ghz

    Abstract: SMF-28 raman gain IR block photodiode PIN photodiode 510 nm
    Text: Data Sheet, Rev. 0 March 7, 2003 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode


    Original     		PDF R2560A R2560A023 SMF-28 pin photodiode 10 ghz SMF-28 raman gain IR block photodiode PIN photodiode 510 nm

    Untitled

    Abstract: No abstract text available
    Text: 50 Ohm SMA SP4T PIN Diode Switch Operating From 8 GHz to 12 GHz Up To +27 dBm TECHNICAL DATA SHEET PE7130 Configuration RF Connector RF Connector Specification Control Connector Design SMA Female MIL-C-39012 Solder Pin Absorptive, SP4T Electrical Specifications


    Original     		PDF PE7130 MIL-C-39012 -sma-sp4t-pin-switch-8000-mhz-12000-mhz-0 5-watt-pe7130-p PE7130

    agere photodiode

    Abstract: pin photodiode 10 ghz IR photodiode 865 nm R2560A R2560A023
    Text: Preliminary Data Sheet, Rev. 1 June 2001 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode


    Original     		PDF R2560A DS00-279OPTO-1 DS00-279OPTO) agere photodiode pin photodiode 10 ghz IR photodiode 865 nm R2560A023

    Untitled

    Abstract: No abstract text available
    Text: MADP-011029-14150T High Power PIN Diode 50 MHz - 12 GHz Rev. V1 Features • • • • • • • • Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss


    Original     		PDF MADP-011029-14150T 260oC MADP-011029 MADP-011027-14150T 0E-14 0E-10

    850NM

    Abstract: HFD8104-102 HFD8112-102 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding
    Text: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical


    Original     		PDF 850NM HFD81XX-102 HFD8104-102 HFD8112-102 700-870nm HFE80xx-102 1-866-MY-VCSEL 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical


    Original     		PDF 850NM HFD81XX-102 HFD8104-102 HFD8112-102 700-870nm HFE80xx-102 1-866-MY-VCSEL

    MADL-011023-14150T

    Abstract: MADL-011023
    Text: MADL-011023-14150T PIN Diode Limiter 10 MHz - 12 GHz Rev. V2 Features •        Functional Schematic 3 Terminal LPF Broadband Shunt Structure 10 MHz - 12 GHz Broadband Frequency >50 dBm Peak Power Handling >40 dBm CW Power Handling <0.2 dB Insertion Loss


    Original     		PDF MADL-011023-14150T 260oC MADL-011023 MADP-011029-14150T ODS-1415 MADL-011023-14150T

    MADP-011027-14150T

    Abstract: No abstract text available
    Text: MADP-011027-14150T High Power PIN Diode 50 MHz - 12 GHz Rev. V1 Features •        Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss


    Original     		PDF MADP-011027-14150T 260oC MADP-011027 0E-14 0E-10 MADP-011027-14150T

    Untitled

    Abstract: No abstract text available
    Text: MADP-011028-14150T High Power PIN Diode 50 MHz - 12 GHz Rev. V1 Features •        Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss


    Original     		PDF MADP-011028-14150T 260oC MADP-011028 MADP-011027-14150T 0E-14 0E-10

    Untitled

    Abstract: No abstract text available
    Text: BAT 14-03W Silicon Schottky Diode 2 • DBS mixer applications up to 12 GHz 1 • Low noise figure • Low barrier type VPS05176 2 1 EHA07007 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package


    Original     		PDF 4-03W VPS05176 EHA07007 OD-323 Oct-07-1999

    noise diode

    Abstract: No abstract text available
    Text: BAT 15-03W Silicon Schottky Diode • DBS mixer applications up to 12 GHz 2 • Low noise figure 1 • Low barrier type VPS05176 1 2 EHA07001 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package


    Original     		PDF 5-03W VPS05176 EHA07001 OD-323 Oct-07-1999 EHD07079 EHD07081 EHD07082 noise diode

    1-GT-38

    Abstract: Triangle Microwave Triangle Microwave attenuator 1-GT-10 KDI triangle 2-gt attenuator
    Text: TEMPERATURE COMPENSATED, VOLTAGE CONTROLLED, ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE 0.25-18 GHz SERIES 1-GT-TT/TR CI.12 5 / 0 3 2 0 01 A . TH RU 4 M T6 . H O LES -aio GENERAL INFORMATION: KDI/Triangle’s pin diode attenuators continuously change


    OCR Scan     		PDF

    SK 10 BAT 065

    Abstract: 9620* diode sk 10 bat
    Text: SIEMENS Silicon Dual Schottky Diode BAT 14-099 • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration


    OCR Scan     		PDF Q62702-A3461 OT-143 EH007095 SK 10 BAT 065 9620* diode sk 10 bat