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    PHOTOTRANSISTOR 500-600 NM Search Results

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    4n35 optocoupler spice model

    Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011

    phototransistor peak 550 nm

    Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
    Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung


    Original     		PDF GEO06840 phototransistor peak 550 nm Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601

    9260 transistor

    Abstract: No abstract text available
    Text: SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0.0.1 0.15 0.13 Vorläufige Daten/Preliminary Data 0.5 0.3 6 5 4 1


    Original     		PDF GEO06840 sfh9260 OHF00499 OHO02260 9260 transistor

    fototransistor

    Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
    Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung


    Original     		PDF GEOY6840 fototransistor phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260

    fototransistor

    Abstract: No abstract text available
    Text: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly


    Original     		PDF D-93055 fototransistor

    VEMT2020

    Abstract: npn phototransistor VEMT2000X01 VEMT2020X01 IPC 7351 2 pin phototransistor P 250 20594 VSMB2000X01 VEMT2520 VEMT2000
    Text: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to


    Original     		PDF VEMT2000X01, VEMT2020X01 AEC-Q101 VEMT2000X01 VSMB2000X01 J-STD-020 2002/95/EC 2002/96/EC VEMT2000X01 VEMT2020 npn phototransistor VEMT2020X01 IPC 7351 2 pin phototransistor P 250 20594 VSMB2000X01 VEMT2520 VEMT2000

    phototransistor 650 nm

    Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor

    Untitled

    Abstract: No abstract text available
    Text: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm


    Original     		PDF VEMT2000X01, VEMT2020X01 AEC-Q101 VEMT2000X01 VSMB2000X01 J-STD-020 2002/95/EC 2002/96/EC VEMT2000X01

    transistor h 331

    Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF 331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm

    VSMB20

    Abstract: VSMG2020 VEMT2000X01 VSMB2000X01 VSMY2850 VEMD25
    Text: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm


    Original     		PDF VEMT2000X01, VEMT2020X01 AEC-Q101 VEMT2000X01 VSMB2000X01 J-STD-020 2002/95/EC 2002/96/EC VEMT2000X01 VSMB20 VSMG2020 VSMB2000X01 VSMY2850 VEMD25

    transistor d-331

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 transistor d-331

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 phototransistor 650 nm

    phototransistor 650 nm

    Abstract: phototransistor peak 550 nm
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm

    Untitled

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text:  !D monolithic 13 NPN phototransistor array EEEEEEEEEEEEEEEECFCA93298C Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45


    Original     		PDF 13-bits 030mm 12234556667832897A8B5C

    Untitled

    Abstract: No abstract text available
    Text:  D!" 13 bit absolute encoder chip 0.6mm EEEEEEEEEEEEEEEECFCA93298C OIT19C consists in a silicon phototransistor’s monolithic array of 13 elements. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon


    Original     		PDF OIT19C 300-900nm. 030mm 12234556667832897A8B5C OIT19C

    Untitled

    Abstract: No abstract text available
    Text:  !" MONOLITHIC 9 NPN PHOTRANSISTOR ARRAY EEEEEEEEEEEEEEEECFCA93298C OIT26 consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is


    Original     		PDF OIT26 300-900nm. 030mm 12234556667832897A8B5C

    Untitled

    Abstract: No abstract text available
    Text:  !" incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT8C consists monolithic array. in two silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is


    Original     		PDF 300-900nm. 030mm 12234556667832897A8B5C

    Untitled

    Abstract: No abstract text available
    Text:  !" enhanced absolute encoder chip EEEEEEEEEEEEEEEECFCA93298C OIT7C consists in three silicon phototransistor’s monolithic arrays. The two arrays of six devices are placed on top and bottom of the device, they represent each bit of the encoder disc. A further array of four


    Original     		PDF 030mm 12234556667832897A8B5C

    Untitled

    Abstract: No abstract text available
    Text:  !" absolute/incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT6C consists in monolithic arrays. two silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon


    Original     		PDF 300-900nm. 030mm 12234556667832897A8B5C

    Untitled

    Abstract: No abstract text available
    Text:  !"#$ incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT2C-X consists monolithic array. in a silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is


    Original     		PDF 300-900nm. 030mm 12234556667832897A8B5C

    Q62702-P1819

    Abstract: No abstract text available
    Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung


    Original     		PDF OHF00312 GPL06965 Q62702-P1819

    Untitled

    Abstract: No abstract text available
    Text: Dialight 591 - 7602-1XX True Surface Mount LED COLLECTOR ID Part No.* Configuration 591-7602-1 xx 900 nm Phototransistor Applications 3.0 • Control and drive circuits LED LEAD SOLDERING SURFACE A I 1-120] “ *i • Copiers • Proximity Sensors COLLECTOR


    OCR Scan     		PDF 7602-1XX

    Untitled

    Abstract: No abstract text available
    Text: SMALL TYPE PHOTOTRANSISTOR PH110 FEATURES_ DESCRIPTION_ • HIGH SENSITIVITY lc = 400 |iA TYP, H = 50 |xW/cm2 • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP The PH110 is a small type high sensitivity phototransistor


    OCR Scan     		PDF PH110 PH110 SE310 b427S2S 00bS3G2 b427525 00bS303