Photodiode vactec
Abstract: S1723-04 "CT scan" VTH209XDS QQQ112M VTH2090 VTH2091
Text: 3D3übüT SbE ÜG Ü1 1 23 IVCT SSG J^EG&G VACTEC T ^ l- 5 3 VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE VTH2090, 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT E G & G VACTEC -PRODUCT DESCRIPTIO N This PIN photodiode consists of a chip with a
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VTH209XDS
VTH2090,
S1723-04,
Photodiode vactec
S1723-04
"CT scan"
QQQ112M
VTH2090
VTH2091
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"CT scan"
Abstract: EG*G Optoelectronics Photodiode vactec S1723-04 Vactec VTH2090 VTH2091 VTH209XDS
Text: aDBDbOT SbE n 0001153 V CT SSO VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE EtSsG VACTBC V T H 2 0 9 0 , 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT G & 6 E VACTEC PRODUCT DESCRIPTION This PIN photodiode consists of a chip with a 9.2 x 9.2 mm active area mounted in a black
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VTH209XDS
VTH2090,
S1723-04,
io-12
"CT scan"
EG*G Optoelectronics
Photodiode vactec
S1723-04
Vactec
VTH2090
VTH2091
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Untitled
Abstract: No abstract text available
Text: 5bE 3030^0^ D 0001113 n EG kG v a c t e c bQl G 8, G - 4 1-55 VTB9610DS Rev, B PHOTODIODE ARRAY 24 ELEMENT VTB9610 OPTOELECTRONICS E IVCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the photovoltaic mode. The anode of each
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VTB9610DS
VTB9610
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Untitled
Abstract: No abstract text available
Text: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide
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VT0340S
VTD34
T-41-51
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Vactec
Abstract: Photodiode-Array VTB9610
Text: SbE n 3 0 3 0 L i Q c3 0 0 D 1 1 1 3 D bOl ' <4 I ' O O _VTB9610DS Rev. B PHOTODIODE ARRAY 24 ELEMENT E G zG v a c t e c VTB9610 OPTOELECTRONICS E G & G VCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the
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3G30bCH
00D1113
VTB9610DS
VTB9610
285OK
Vactec
Photodiode-Array
VTB9610
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Untitled
Abstract: No abstract text available
Text: VTB6061 CIE VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack age. This photodiode is a spectrally modified VTB6061B with a spectral response closely resembling that of the
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VTB6061
VTB6061B
Cto50Â
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VTP413
Abstract: No abstract text available
Text: Sb E D BDBDbD^ OOOlGbH HVCT VTP Process Photodiodes VTP413 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible
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VTP413
T-41-51
Temperatu75
2x1013
VTP413
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VTB6060
Abstract: 2X10 VTB6060J VTB6061J 6061J
Text: SbE » • 3Q3DbDT 0001D147 0D3 VTB Process Photodiodes IVCT VTB6060J, 6061J E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, three lead TO-8 pack age. Chip is isolated from case. The
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0001D147
VTB6060J,
6061J
T-41-51
VTB6060J
1001c,
x1013
VTB6060
2X10
VTB6060J
VTB6061J
6061J
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Untitled
Abstract: No abstract text available
Text: SbE ]> • BDaObO'i GDDllGS 535 IVCT VTS7080A |~VTS-2 Process Photodiodes T-41-51 E G 8, G VACTEC PACKAGE DIMENSIONS inch mm ( 20.831 .820 PRODUCT DESCRIPTION CASE 16 Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the
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VTS7080A
T-41-51
100/iW
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VTP413
Abstract: S 76 infrared k75m
Text: 5bE D BDBDbO" □ □□lübl4 n e VTP Process Photodiodes • VCT VTP413 E 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm) PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible
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VTP413
T-41-51
2x1013
VTP413
S 76 infrared
k75m
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UV led 200 nm peak
Abstract: uv led 365 VTB5050UVJ VTB5051UVJ
Text: £fc E D 30301,0^ 0001Q44 VTB Process Photodiodes IVCT 3T4 VTB5050UVJ, 1UVJ E G & G VACTEC PACKAGE DIMENSIONS neh (mm) PRODUCT DESCRIPTION CASE U A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planarsilicon photodiode in athree lead TO-5 package with a UV transmitting
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3030bCH
0001Q44
VTB5050UVJ,
VTB5050UVJ
VTB5051UVJ
x1012
8x1013
UV led 200 nm peak
uv led 365
VTB5050UVJ
VTB5051UVJ
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Vactec
Abstract: VTB9415 VTB9416
Text: SbE D 3030bCH 000105b Dlb M V C T VTB Process Photodiodes VTB9415, E G & G VACTEC 9416 T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planarsilicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of
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3030bCH
VTB941
T-41-51
VTB9415
VTB9416
x1013
8x1013
Vactec
VTB9415
VTB9416
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P-111-2
Abstract: VTP1113 VTP1112
Text: SbE D I • aoaübül OOOlOb? IVCT TTl VTP1112, 1113 Process Photodiodes T-41-51 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 19 PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead T O -4 6 package. ABSOLUTE MAXIMUM RATINGS
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VTP1112,
T-41-51
P-111-2
VTP1113
VTP1112
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1150S
Abstract: VTP1150 Photodiode vactec
Text: 5bE D 3Q3QtiQR OQOIQbS VTP Process Photodiodes E 6 & 6 B3Ô HVCT VTP11 50 , 1150S VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) Planar silicon photodiode mounted on a two lead ceramic header. A molded
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VTP1150,
1150S
T-41-51
VTP1150
VIP1150S
100ltage
5x1012
1150S
VTP1150
Photodiode vactec
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Untitled
Abstract: No abstract text available
Text: 5bE D 3030 ^0^ GG01070 fi Ï fi HVCT VTP12 50 , 1250S VTP Process Photodiodes E Hit, T-41-51 VACTEC PACKAGE DIMENSIONS inch (mm PRODUCT DESCRIPTION CASE 12 Planar silicon photodiode mounted on a two lead ceramic header. These diodes have a filter incorporated into the pack
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GG01070
VTP12
1250S
T-41-51
VTP1250
VTP1250S
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DDD104
Abstract: VTB6060UV
Text: SbE ]> • aüaDbDT DDD104Ô T4T IVCT VTB6060UV, 61 UV I VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is
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DDD104Ã
VTB6060UV,
T-41-51
vtb6060uv
vtb6061uv
x1013
DDD104
VTB6060UV
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VTP1013
Abstract: VTP1012
Text: 5bE D • BDBDbD^ □□OlQbb TbS H V C T VTP Process Photodiodes E 6 8, G VTP1012, 1013 VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERME11C CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in
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VTP1012,
T-41-51
HERME11C
x1012
VTP1013
VTP1012
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VTB9412B
Abstract: VTB9413B VTB9414B
Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in
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3030bDT
0001DS7
VTB9412B,
T-41-51
VTB9412B
VTB9413B
VTB9414B
x1013
VTB9412B
VTB9413B
VTB9414B
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s 9413
Abstract: VTP9412 VTP9413
Text: SLE D • SOSObD^ 0001GÛM VTP Process Photodiodes E 6 & G TÔD « V C T VTP9412, 9413 T -41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear
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VTP9412,
T-41-51
VTP9412
VTP9413
x1012
s 9413
VTP9412
VTP9413
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Untitled
Abstract: No abstract text available
Text: 5bE D • 3030^0^ □□□1111 83^ « V C T VTS7070A VTS-3 Process Photodiodes E G & 6 VACTEC T - 9 0 -0 1 PACKAGE DIMENSIONS inch mm CASE 16 PRODUCT DESCRIPTION 1.25-HERMETIC PACKAGE CHIP ACTIVE AREA: .431 in2 (278 mm2) Large area planar silicon photodiode in
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VTS7070A
25-HERMETIC
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VTB1112BI
Abstract: No abstract text available
Text: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in
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G001G34
VTB1112BI,
to-46
vtb1112bi
vtb1113bi
2x1013
VTB1112BI
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VTS7080A
Abstract: No abstract text available
Text: SbE ]> • 3030ijCH Q0011DS S3S ■VCT VTS7080A |~VTS-2 Process Photodiodes E G 8, G T-41-51 VACTEC PACKAGE DIMENSIONS inch mm ( 2 0 .8 3 1 .8 2 0 PRODUCT DESCRIPTION Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the
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3030bCH
00011DS
VTS7080A
T-41-51
VTS7080yp.
VTS7080A
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Untitled
Abstract: No abstract text available
Text: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,
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VTD206K
SFH206K
3030fci01
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VTP5040
Abstract: VTP5041 VTP5841
Text: _ 5 bE D • 303QbtH DD01075 T76 * V C T 4 1 IR VTP5040. VTP Process Photodiodes T-41-51 E G & G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a “flat" win dow, dual lead TO-5 package. Cathode is common to the case. VTP5041 IR
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3D30btH
DD01075
VTP5040.
VTP5041
T-41-51
BxIO12
VTP5040
VTP5841
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