dual photodiode
Abstract: photodiode dvd cd S4204 S2721-02 S3096-02 dvd photodiode common cathode photodiode
Text: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204 Dual-element, plastic package photodiode S2721-02, S3096-02 and S4204 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.
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S2721-02,
S3096-02,
S4204
S3096-02
S4204
SE-171
KMPD1039E02
dual photodiode
photodiode dvd cd
S2721-02
dvd photodiode
common cathode photodiode
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S2721
Abstract: S4204 S8703 S2721-02 Si PIN PHOTODIODE DVD photodiode dvd cd S3096-02 dvd photodiode BURR SPECIFICATIONS
Text: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.
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S2721-02,
S3096-02,
S4204,
S8703
S4204
S8703
SE-171
KMPD1039E03
S2721
S2721-02
Si PIN PHOTODIODE DVD
photodiode dvd cd
S3096-02
dvd photodiode
BURR SPECIFICATIONS
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S2721
Abstract: Si PIN PHOTODIODE DVD
Text: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.
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S2721-02,
S3096-02,
S4204,
S8703
S4204
S8703
SE-171
KMPD1039E03
S2721
Si PIN PHOTODIODE DVD
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scintillator
Abstract: S2744-08 S3588-08
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08
S2744-08
S3588-08
SE-171
KPIN1049E01
scintillator
S2744-08
S3588-08
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E04
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S2744-08
Abstract: S2744-09 S3588-08 S3588-09
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E05
S2744-08
S2744-09
S3588-08
S3588-09
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S2744-08
Abstract: S2744-09 S3588-08 S3588-09
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E03
S2744-08
S2744-09
S3588-08
S3588-09
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E02
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S2744-08
Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E04
S2744-08
S2744-09
S3588-08
S3588-09
PIN photodiode 420 nm
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E06
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E06
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S8558
Abstract: No abstract text available
Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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GP1U271X
Abstract: GP1U27X GP1U270X GP1U272X GP1U273X GP1U277X
Text: ! PREPARED BY: SPEC. No. DATE: RKd Jiw s ,199Y APPROVED BY: SW- @>/y?/ 9 Pages PAGE DATE: ;<, aim - ELE~RONIC COMPONENTS GROUP SHARP CORPORATION REPRESEWA~ DMSION OPTO-ELECTROMC DEVICES DW. SPECIFICATION \ DEVICE SPECIFICATION FOR Infrared Light Detecting unit
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Nellcor compatible probe 520-1011N
Abstract: finger probe nellcor 520-1011N finger plethysmography slaa274 IR LED and photodiode heart rate MS430FG437 MSP430FG437PN Nellcor compatible 520-1011N BC856ASMD
Text: SLAA274 – November 2005 A Single-Chip Pulsoximeter Design Using the MSP430 Vincent Chan, Steve Underwood . MSP430 Products This application report discusses the design of non-invasive optical plethysmography
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SLAA274
MSP430
MSP430
MSP430FG437
Nellcor compatible probe 520-1011N
finger probe nellcor
520-1011N
finger plethysmography
slaa274
IR LED and photodiode heart rate
MS430FG437
MSP430FG437PN
Nellcor compatible 520-1011N
BC856ASMD
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KA9201
Abstract: KS74HCTLS04 KA9201Q TE-2012 CP2119 KA9201D KA9201M TE2012 KS74HCTLS
Text: RF-AMP KA9201 INTRODUCTION 30−SOP−375 The KA9201, which is an RF amplifier, is a monolithic integrated circuit designed for three-spot type optical pick-up of the compact disc player. It consists of an RF signal processing circuit, a Focus Error AMP, a
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KA9201
30-SOP-375
KA9201,
30-SDIP-400
32-QFP-0707
KA9201
KS74HCTLS04
KA9201Q
TE-2012
CP2119
KA9201D
KA9201M
TE2012
KS74HCTLS
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GaP photodiode APD
Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23
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S1087.
S1087-01
G1115
G1116
G1117
G1118
G1120
G1126-02.
S6801-01
S6926.
GaP photodiode APD
uv photodiode, GaP
GaP photodiode PIN
S-4036
UV photodiode
PIN Photodiode
S3590
GaP photodiode
schottky photodiode
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photodiode
Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23
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G1115
G1116
G1117
G1118
G1120
G1126-02.
S5107.
S5139.
S5343.
S5344
photodiode
schottky photodiode
uv photodiode, GaP
GaP photodiode APD
Si PIN PHOTODIODE
uv photodiode
Si apd photodiode 800 nm
GaP photodiode
PIN 38 PHOTODIODE
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S2662-01
Abstract: S3204-03 L627 S3590-03 S1790
Text: Large-Area PIN Silicon Photodiodes FEATURES Silicon photodiodes are promising devices for scintillation detec • Large active area: 10 X 10 mm, 10 X 20 mm, 30 X 30mm, etc. • High quantum efficiency • Low dark current • Low bias voltage operation • Sensitivity matching with BGO scintillators
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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AD533
Abstract: ci tl071 LEM sensor CURRENT S1300 analog divider S-1300
Text: HAMAMATSU TECHNICAL DATA T he H m am atsu silicon PSD P osition S en sitive D etectors are op toelectron ic sensors that provide con tinu ou s position data of light spots travelin g o ve r th e ir p h o to se n sitive su r faces. LA R G E-A R EA PSD SERIES
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HPI-262082F
44-ftt
SD1003E02
1-08191-H
34-3-G
99-65S3
AD533
ci tl071
LEM sensor CURRENT
S1300
analog divider
S-1300
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AT8U
Abstract: 4-Pin, Microtech connector F0061 F0062 pal20l8b s9493 MS29673 Z75N T6832
Text: niCROTECH SEMICONDUCTORS 4 SE D > bll 7 S o V 0000024 3 B H I C S MICROTECH BS9000 Approved product list Memory Part N9 Package style BS Spec. N9 Functional Description M S 6 1 1 6 -2 2 4 PIN D IL B S 9 40 0 G 0 0 8 5 2k x 8 S R A M M S29653 18 PIN DIL B S 9400 G 0 1 12
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BS9000
S29653
S29673
S29683
BS94Q0
T58128
E-0109-05
AT8U
4-Pin, Microtech connector
F0061
F0062
pal20l8b
s9493
MS29673
Z75N
T6832
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S27C256
Abstract: No abstract text available
Text: S G S-THOnSON Û7D D I 7 ^ 2 3 7 87D 10547 ' o r u i v D r 'V ^ /^ - S * ? X jS J .C M O ^ ^ ^ ADVANCE INFORMATION The TS27C256 is a high speed 2 5 6 K U V erasable and electrically reprogram mable EPROM ideally suited for applications where fast turn-around and
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DD10S47
TS27C256
28-pin
S27C256
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S27C64A
Abstract: TS27C64A-25CQ TS27C64A-20CQ ah rzj TS27C64AQ 27C64a 27C64-3 TS27C64A-25VQ DIP-28 27C64-15
Text: • iZ J * J 0DS73^6 T !- S G S -T H O M S O N M U l « [ M i [ L l « ( M O ( g g ) _ S G S-THOMSON 3DE T S 2 7 C 6 4 A Q » 64K (8K x 8) CMOS UV ERASABLE PROM ■ FAST ACCESS TIME - 150ns, 200ns, 250ns, 300ns ■ COMPATIBLE TO HIGH SPEED MICROPRO
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0DS73
TS27C64AQ
150ns,
200ns,
250ns,
300ns
28-PIN
DIP-28
TS27C64A
S27C64A
TS27C64A-25CQ
TS27C64A-20CQ
ah rzj
TS27C64AQ
27C64a
27C64-3
TS27C64A-25VQ
DIP-28
27C64-15
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