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    PHOTODIODE INGAAS Search Results

    PHOTODIODE INGAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    ISL78365ARZ-T7A Renesas Electronics Corporation Automotive High Speed Quad Laser Diode Driver Visit Renesas Electronics Corporation

    PHOTODIODE INGAAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Photodiode modules C10439 series Integrates photodiode for precision photometry with low-noise amp The C10439 series photodiode modules are high-precision photodetectors that integrate a photodiode and a current-to-voltage amplifier. The output from these photodiode modules is an analog voltage and can be easily checked with a voltmeter, etc.


    Original     		PDF C10439 KACC1139E03

    G9906-01

    Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
    Text: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.


    Original     		PDF G9906-01 G9906-01 SE-171 KIRD1075E02 KIRD1075E02 photodiode InGaAs NEP

    InGaas PIN photodiode, 1550 NEP

    Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


    Original     		PDF MXA-256-1, MXA-256-X InGaas PIN photodiode, 1550 NEP PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array

    opto 2561

    Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


    Original     		PDF MXA-256-1, MXA-256-X opto 2561 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP

    Untitled

    Abstract: No abstract text available
    Text: Photosensor amplifier C8366 series Current-to-voltage conversion amplifier C8366: for high-speed Si PIN photodiode C8366-01: for high-speed InGaAs PIN photodiode Features Applications Wide band DC to 100 MHz Typ. (-3 dB; varies depending on the photodiode used)


    Original     		PDF C8366 C8366: C8366-01: C8366 B1201, KACC1067E06

    InGaas PIN photodiode chip

    Abstract: G8909-01 KIRD1053E02 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02 InGaas PIN photodiode chip G8909-01 KIRD1053E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02

    DWDM AWG

    Abstract: InGaAs photodiode array chip
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02 DWDM AWG InGaAs photodiode array chip

    photo diode array InGaAs

    Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02 photo diode array InGaAs G8909-01 InGaAs photodiode array chip KIRD1053E02

    InGaAs photodiode array chip

    Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance l DWDM monitor with AWG • General ratings Parameter Active area


    Original     		PDF G8909-01 SE-171 KIRD1053E01 InGaAs photodiode array chip G8909-01 KIRD1053E01 50 um photodiode

    PIN photodiode crosstalk

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E01 PIN photodiode crosstalk

    MXA-512-1

    Abstract: MXA-512-2 photodiode 256 elements silicon photodiode 512 elements
    Text: Imaging Telecom Multiplexed InGaAs Photodiode Array MXA-512 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-512-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 nm. The


    Original     		PDF MXA-512 MXA-512-X MXA-512-1 MXA-512-2 photodiode 256 elements silicon photodiode 512 elements

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.


    Original     		PDF G8195 SE-171 KIRD1034E02

    SE-171

    Abstract: G8195 G8195-11 G8195-12 pin photodiode 10 ghz Hamamatsu se171
    Text: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.


    Original     		PDF G8195 SE-171 KIRD1034E02 G8195-11 G8195-12 pin photodiode 10 ghz Hamamatsu se171

    G8941

    Abstract: G8941-01 G8941-02 G8941-03
    Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm


    Original     		PDF G8941 G8941-01: G8941-02: G8941-03: G8941-01 G8941-02 G8941-03 G8941-01 G8941-02 G8941-03

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm


    Original     		PDF G8941 G8941-01: G8941-02: G8941-03: G8941-01 G8941-02 G8941-03

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm


    Original     		PDF G8941 G8941-01: G8941-02: G8941-03: G8941-01 G8941-02 G8941-03

    inGaAs photodiode 1550 array

    Abstract: pin Photodiode 1550 nm photodiode Photodiode Array linear photodiode array 1550 nm inGaAs photodiode 1550 pin photodiode 1550 pin Photodiode 1300 nm PIN photodiode ps p-i-n photodiode 10 Ghz
    Text: PDCA12-68 12 Channel InGaAs p-i-n Photodiode REV 09/01 Features Specifications T=25°C 1x12 p-i-n- photodiode array Parameter Sym Min Typ Max Unit Array pitch 250 µm Diameter of light sensitive area 68 µm Responsivity λ = 830 nm R 0.45 Individual pads for each photodiode


    Original     		PDF PDCA12-68 PDCA12-68 CH-6805 inGaAs photodiode 1550 array pin Photodiode 1550 nm photodiode Photodiode Array linear photodiode array 1550 nm inGaAs photodiode 1550 pin photodiode 1550 pin Photodiode 1300 nm PIN photodiode ps p-i-n photodiode 10 Ghz

    PIN photodiode 500 nm

    Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
    Text: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with


    Original     		PDF GFD1300-550 temperature-10 GFD1300-550 FIBER54 PIN photodiode 500 nm Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm

    G8194

    Abstract: G8194-21 G8194-22 G8194-23 G8194-32 InGaas PIN photodiode, 795 ,sensitivity TIA 604-10
    Text: PHOTODIODE InGaAs PIN photodiode G8194 series Receptacle type, 1.3/1.55 µm, 2 GHz G8194 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		PDF G8194 SE-171 KIRD1033E02 G8194-21 G8194-22 G8194-23 G8194-32 InGaas PIN photodiode, 795 ,sensitivity TIA 604-10

    Receptacle LC

    Abstract: pin Photodiode 2 GHz G8194 G8194-21 G8194-22 G8194-23 G8194-32 TIA 604-10 FC Receptacle pin photodiode 20 ghz
    Text: PHOTODIODE InGaAs PIN photodiode G8194 series Receptacle type, 1.3/1.55 µm, 2 GHz G8194 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		PDF G8194 SE-171 KIRD1033E04 Receptacle LC pin Photodiode 2 GHz G8194-21 G8194-22 G8194-23 G8194-32 TIA 604-10 FC Receptacle pin photodiode 20 ghz

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		PDF G9801 SE-171 KIRD1081E01

    G9801

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		PDF G9801 SE-171 KIRD1081E01

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G9821 STM-16/OC-48) SE-171 KIRD1085E01