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    PHILIPS TRANSMITTING BIPOLAR Search Results

    PHILIPS TRANSMITTING BIPOLAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    PHILIPS TRANSMITTING BIPOLAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    RF Power transistor

    Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting


    Original     		PDF BLV59, BLV59 RF Power transistor TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132

    SOT333

    Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage


    Original     		PDF

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


    Original     		PDF

    SOT123 Package

    Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the


    Original     		PDF SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note

    IN916

    Abstract: NE8392C NE8392CA NE8392CN NE83C92 NE83Q92 NE83Q93 10BASE2 "network interface controller"
    Text: Philips Semiconductors Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION NE8392C PIN CONFIGURATION The NE8392C Coaxial Transceiver Interface CTI is a bipolar coaxial line driver/receiver for Ethernet (10base5) and Thin Ethernet


    Original     		PDF NE8392C NE8392C 10base5) 10base2) SD00279 100ns SD00278 SD00280 SD00281 IN916 NE8392CA NE8392CN NE83C92 NE83Q92 NE83Q93 10BASE2 "network interface controller"

    CXA 2188

    Abstract: pico electronics transformers instrument cluster schematic can bus 305M 330M 87C751 AN430 AN444 P82B715
    Text: MICROCONTROLLER PRODUCTS AN444 Using the P82B715 I2C extender on long cables Author: Don Sherman Philips Semiconductors June 1993 Philips Semiconductors Application note Using the P82B715 I2C extender on long cables AN444 Author: Don Sherman, Sunnyvale The P82B715 I2C Buffer was designed to extend the range of the


    Original     		PDF AN444 P82B715 CXA 2188 pico electronics transformers instrument cluster schematic can bus 305M 330M 87C751 AN430 AN444

    Belden STP

    Abstract: 87C751 AN430 AN444 P82B715 305M 330M tv lcd Schematic i2c program
    Text: Philips Semiconductors Application note Using the P82B715 I2C extender on long cables AN444 Author: Don Sherman, Sunnyvale The P82B715 I2C Buffer was designed to extend the range of the local I2C bus out to 50 Meters. This application note describes the results of testing the buffer on several different types of cables to


    Original     		PDF P82B715 AN444 Belden STP 87C751 AN430 AN444 305M 330M tv lcd Schematic i2c program

    Tea1067 philips

    Abstract: TEA1067 MGR091 PCD3320 MBA454 BST76 transistor PCD3343 SO20 TEA1060 TEA1067T
    Text: INTEGRATED CIRCUITS DATA SHEET TEA1067 Low voltage versatile telephone transmission circuit with dialler interface Product specification File under Integrated Circuits, IC03A June 1990 Philips Semiconductors Product specification Low voltage versatile telephone


    Original     		PDF TEA1067 IC03A TEA1067 SCA60 415102/00/02/pp28 Tea1067 philips MGR091 PCD3320 MBA454 BST76 transistor PCD3343 SO20 TEA1060 TEA1067T

    Belden STP

    Abstract: meter bus belden 8723 RS-232 to i2c converter 305M 330M 87C751 AN430 AN444 P82B715
    Text: Philips Semiconductors Microcontroller Products Application Note Using the P82B715 I2C extender on long cables AN444 Author: Don Sherman, Sunnyvale The P82B715 I2C Buffer was designed to extend the range of the local I2C bus out to 50 Meters. This application note describes


    Original     		PDF P82B715 AN444 Belden STP meter bus belden 8723 RS-232 to i2c converter 305M 330M 87C751 AN430 AN444

    AN465 1

    Abstract: 80C51 AN464 AN465 87LPC76X manual
    Text: INTEGRATED CIRCUITS ABSTRACT Extends the basic concepts presented in AN464 Using the 87LPC76X microcontroller as an I 2C bus master with special focus on multi–master configurations including the arbitration mechanism and handshake by clock synchronization. A description of various


    Original     		PDF AN464 87LPC76X AN465 AN465 1 80C51 AN464 AN465 87LPC76X manual

    sot123 package

    Abstract: sot123 SOT-123 philips blx15 blx13 BLW50F sot122f Blx15 philips BLW96
    Text: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors BIPOLAR RF TRANSMITTING TRANSISTORS HF SINGLE SIDEBAND 1.5 - 30 MHz BIPOLAR TRANSISTORS • Very wide range of devices with supply voltages


    OCR Scan     		PDF BLV10 BLY87C BLY87CAJ1 BLV20 BLY91C BLY91C/01 BLV11 BLY88C BLY88C/01 BLV21 sot123 package sot123 SOT-123 philips blx15 blx13 BLW50F sot122f Blx15 philips BLW96

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Low voltage versatile telephone transmission circuit with dialler interface TEA1067 Asymmetrical high-impedance input 32 k ii for electret microphone GENERAL DESCRIPTION The TEA1067 is a bipolar integrated circuit performing all


    OCR Scan     		PDF TEA1067 TEA1067,

    T119 A

    Abstract: sot 122 SOT123 Package BLW78
    Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain


    OCR Scan     		PDF 4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78

    SOT123 Package

    Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123
    Text: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5


    OCR Scan     		PDF BLV36 BLV38 OT-161, OT-179, BFR96S BFQ34 BLW32 BLX96 BFQ68 BLW33 SOT123 Package BLV62 BLX98 BLF147 BLF175 SOT-48 SOT123

    122d

    Abstract: BLU98 ON4612 sot37 172d BLV100
    Text: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7


    OCR Scan     		PDF BFR90A BFG90A BFR91A BFG91A BLU98 BLV90 BLT80 BLT81 BLV90/SL BLV91/SL 122d ON4612 sot37 172d BLV100

    TEA1064A

    Abstract: TEA1064AT philips tea 1064A
    Text: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting GENERAL DESCRIPTION PACKAGE OUTLINES The TEA1064A is a bipolar integrated circuit that performs all the speech and line interface functions required in fully


    OCR Scan     		PDF TEA1064A PCD3310; PCD332X TEA1064AT philips tea 1064A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A GENERAL DESCRIPTION The TEA1064A is a bipolar integrated circuit that performs all the speech and line interface functions


    OCR Scan     		PDF TEA1064A TEA1064A PCD3310; PCD332X 7Z26S11 PCD3344

    Piezo Contact Microphone

    Abstract: tea 1061 ic pin configuration PCD3343 piezo electric microphone TEA1060 piezo microphone preamplifier Automatic Voltage stabilizer FET electret microphone A1061 BST76
    Text: Philips Semiconductors Product specification Versatile telephone transmission circuits with dialler interface_ TEA1060 TEA1061 g e n e r a l d e s c r ip t io n The TEA1060 and TEA1061 are bipolar integrated circuits performing all speech, and line interface


    OCR Scan     		PDF TEA1060 TEA1061 TEA1061 TEA1060) TEA1061) Piezo Contact Microphone tea 1061 ic pin configuration PCD3343 piezo electric microphone piezo microphone preamplifier Automatic Voltage stabilizer FET electret microphone A1061 BST76

    122d

    Abstract: blw79 BLW80 BLX91 sot 122
    Text: 61 RF/Microwave Devices Bipolar RF Transmitting Transistors UHF 400-512MHz Package Outline Type No. Load Power W> @ 470MHz Power Gain (dB @ 470MHz Supply Voltage (V) 1.2 8 10.5 6 7.5 7.5 0.4 1 2 2 2 2 2.5 4 5 7 10 10 15 20 30 45 60 10 12 6 9 6 9 10 8 10.5


    OCR Scan     		PDF 400-512MHz 470MHz BLT50 BLT53 OT-223, OT-122D, 2N4427 BLU56 BLX65 122d blw79 BLW80 BLX91 sot 122

    philips tea 1064A

    Abstract: piezo electric microphone AMS microphone TEA 1045 TEA1064A S020 TEA1064AT TEA1067 7zu34s Tea1067 philips
    Text: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A G E N E R A L D E S C R IP T IO N The T E A 1 0 6 4 A is a bipolar integrated circuit that performs all the speech and line interface functions


    OCR Scan     		PDF TEA1064A TEA1064 TEA1064A 7Z26S11 PCD3344 711032t. philips tea 1064A piezo electric microphone AMS microphone TEA 1045 S020 TEA1064AT TEA1067 7zu34s Tea1067 philips

    piezoelectric microphone

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Versatile telephone transmission circuit with dialler interface TEA1066T • Receiving amplifier for magnetic, dynamic or piezoelectric earpieces FEATURES • Voltage regulator with adjustable static resistance


    OCR Scan     		PDF TEA1066T PCD3310 piezoelectric microphone

    Wheatstone Bridge INA 125 P

    Abstract: ME 1117 voltage regulator TEA1068 Wheatstone Resistive Bridge amplifier ina 114
    Text: Philips Semiconductors Product specification Versatile telephone transmission circuit with dialler interface • Large gain setting range on microphone and earpiece amplifiers FEATURES • Voltage regulator with adjustable static resistance • Provides supply for external circuitry


    OCR Scan     		PDF 7110fl2b Wheatstone Bridge INA 125 P ME 1117 voltage regulator TEA1068 Wheatstone Resistive Bridge amplifier ina 114