BFQ34
Abstract: transistor marking N1 BFQ34/01,112
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4
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BFQ34
OT122A
BFQ34/01
BFQ34/01
OT122
BFQ34
transistor marking N1
BFQ34/01,112
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BFR134
Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar
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BFR134
BFR134
2322 712
2322-712
Philips fr 153 30
philips resistor 2322 763
Transistor 933
2222 372
transistor J 3305
109 transistor 33 db
2222 379
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers
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DD315
BFQ54T
BFQ34T.
0031ST4
BB339
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transistor 45 f 122
Abstract: BFQ54 sot 122 philips bfq54
Text: Philips Components BFQ54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _À_ _ _ _ _ PNP 4 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SOT122 package, prim arily intended fo r MATV and microwave amplifiers, such as radar systems, spectrum analysers etc.
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bfq54
BFQ54
OT122
EiFQ34.
IS21I2
1-IS11I2)
1-IS22I
45005B,
transistor 45 f 122
sot 122
philips bfq54
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OM2070
Abstract: philips if catv amplifier
Text: Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2070
IS2112
711005b
DD157n
OM2070
philips if catv amplifier
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OM2070B
Abstract: philips if catv amplifier 9C42
Text: Philips Semiconductors Product specification Wideband amplifier module OM2070B DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2070B
711Da2b
DCH72S6
OM2070B
philips if catv amplifier
9C42
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OM2082
Abstract: R767 R3R40 MGC961 S2112
Text: Philips Semiconductors Preliminary specification Wideband amplifier module QM2082/61 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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QM2082/61
9S765
MSA340
S2112time
711002b
00ci5731
OM2082
R767
R3R40
MGC961
S2112
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philips if catv amplifier
Abstract: MSA806 gt 6312 diagram tv Philips 14 sf 829 SF 829 B uhf tv booster circuit diagram
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2082/60
MSA340
IS21I2
SCD24
7110A2L
philips if catv amplifier
MSA806
gt 6312
diagram tv Philips 14
sf 829
SF 829 B
uhf tv booster circuit diagram
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2083/60
IS21I2
SCD24
7110fl2fc,
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1S1212
Abstract: zo 103 ma MC75
Text: Philips Semiconductors Product specification Wideband amplifier module OM2Q63 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF
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OM2Q63
IS2112
1S1212
zo 103 ma
MC75
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uhf tv booster circuit diagram
Abstract: philips if catv amplifier 4894 gt 6312 diagram tv Philips 14
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2081/60 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2081/60
MSA338
IS21I2
SCD24
711002b
DDRM42Ã
uhf tv booster circuit diagram
philips if catv amplifier
4894
gt 6312
diagram tv Philips 14
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MSA338
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q81/87 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2Q81/87
MSA338
IS2112
711005b
MSA338
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4894
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q81/86 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2081/86
IS2112
SCD30
7110flSb
4894
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MSA806
Abstract: philips if catv amplifier gt 6312 philips MATV amplifiers
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q82/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2Q82/86
MSA340
SCD24
7110fl2b
MSA806
philips if catv amplifier
gt 6312
philips MATV amplifiers
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150 db UHF VHF BOOSTER
Abstract: philips if catv amplifier wideband amplifier
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q82/87 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2Q82/87
MSA340
En573fl
150 db UHF VHF BOOSTER
philips if catv amplifier
wideband amplifier
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BFG23
Abstract: No abstract text available
Text: • bbSBTBl 0017b47 3 ■ N AMER PHILIPS/DISCRETE BFG23 SSE D J V T-3l-i£r P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as MATV and CATV systems, up to 2 GHz.
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0017b47
BFG23
OT-103)
BFG91A.
BFG23
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'JE T> bbsa^ai 003245D fiS3 IAPX U M d /u HYBRID INTEGRATED CIRCUIT VHF/UHF W IDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV and CATV systems, and as
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003245D
OM370
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Untitled
Abstract: No abstract text available
Text: I I N AnER PHILIPS/DISCRETE bRE D bbSB'm 0D3E4flb JOl 11 APX O M 2060 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as preamplifier in MATV systems, and as general-purpose ampli
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Q03E4TD
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HYBRID OM2060
Abstract: OM2060 philips om2060
Text: N AMER PHILIPS/DISCRETE bTE D • ^53^31 0D3E4flb TGT * A P X OM2060 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as preamplifier in MATV systems, and as general-purpose ampli
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OM2060
HYBRID OM2060
OM2060
philips om2060
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D'ISCRETE 25E D • bbS3131 GQlfi425 i ■ J OM339 t 7 y -0 7 -0 1 - HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid integrated circuit technique, designed fo r use in mast head booster-amplifiers, as amplifier in MATV systems, and as general-purpose amplifier fo r v.h.f. and
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bbS3131
GQlfi425
OM339
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Om2061
Abstract: No abstract text available
Text: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.
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OM2061
T-74-09-01
7Z63782
7Z837Q1
Om2061
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BFR92A
Abstract: bft92 die transistor P2P marking code P2p SOT23 BFR90A BFT92 TRANSISTOR FQ
Text: DISCRETE SEMICONDUCTORS BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistor
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BFR92A
BFT92.
collector-emittFR92A
bft92 die
transistor P2P
marking code P2p SOT23
BFR90A
BFT92
TRANSISTOR FQ
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BFQ34T
Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Text: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in
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BFQ54T
BFQ34T.
D31SCÃ
BFQ54T
MBB339
BFQ34T
philips MATV amplifiers
25c2570
Philips MBB
MBB339
638 transistor
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BFR90A
Abstract: BFR92A BFT92 A18 transistor
Text: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;
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bbS3T31
001fl0b3
BFR92A
OT-23
BFT92
150mV;
BFR90A
BFR92A
BFT92
A18 transistor
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