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    PHILIPS FERRITE 4B1 CURRENT Search Results

    PHILIPS FERRITE 4B1 CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    PHILIPS FERRITE 4B1 CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips ferrite 4b1

    Abstract: philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead
    Text: Philips Components Magnetic Products SMD Wide Band Chokes SMD Wide Band Chokes SMD wide-band chokes are an alternative to a SMD bead when more impedance or damping is required. The design of this product is based on our well known range of through-hole wide-band chokes. In these products the conductor wire is


    Original     		PDF MWW006 MWW007 8/10-3B1 MWW008 8/10-4B1 philips ferrite 4b1 philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead

    3C80 ferrite

    Abstract: philips 3h1 ferrite material 3c80 material Philips Components, Soft Ferrites Data Handbook M PHILIPS toroidal core 3c90 3h1 ferrite material PHILIPS toroidal core 4a11 philips 3C85 ferrite material PHILIPS toroidal core 3c85 PHILIPS ferrite transformer cores
    Text: MAIN MAIN MENU MENU APPLICATIONS Philips Components Soft ferrites Applications APPLICATIONS INTERFERENCE SUPPRESSION Introduction Unwanted high frequency signals are blocked, wanted signals can pass. With the increasing use of electronic equipment it is of vital importance to suppress interfering


    Original     		PDF MBW422 3C80 ferrite philips 3h1 ferrite material 3c80 material Philips Components, Soft Ferrites Data Handbook M PHILIPS toroidal core 3c90 3h1 ferrite material PHILIPS toroidal core 4a11 philips 3C85 ferrite material PHILIPS toroidal core 3c85 PHILIPS ferrite transformer cores

    B0239

    Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
    Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.


    OCR Scan     		PDF LX1214E500X 100A1201kp B0239 Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor

    j78 transistor

    Abstract: j78 transistor equivalent
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very


    OCR Scan     		PDF LLE15180X j78 transistor j78 transistor equivalent

    by239

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


    OCR Scan     		PDF LLE16350X by239

    Transistor AND DIODE Equivalent list

    Abstract: 100A101kp
    Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF LLE15370X MBD764 Transistor AND DIODE Equivalent list 100A101kp

    diode BY239

    Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
    Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF LLE16045X diode BY239 bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55

    diode BY239

    Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter


    OCR Scan     		PDF LXE15450X MLC446 OT439A. diode BY239 bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15

    Transistor AND DIODE Equivalent list

    Abstract: Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239
    Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common emitter class AB.


    OCR Scan     		PDF LX1214E500X OT439A. Transistor AND DIODE Equivalent list Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239

    12NC philips diode 93

    Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF LLE15180X OT437A. 12NC philips diode 93 transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K

    j78 transistor equivalent

    Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


    OCR Scan     		PDF LLE16045X OT437A. j78 transistor equivalent Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15

    diode BY239

    Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF LLE15370X OT437A. diode BY239 Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15

    m 32 ab transistor

    Abstract: mlc444 bd239 equivalent
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter


    OCR Scan     		PDF LXE15450X m 32 ab transistor mlc444 bd239 equivalent

    philips ferrite material specifications 12nc

    Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency


    OCR Scan     		PDF LLE18150X 7110fi5b philips ferrite material specifications 12nc Class E amplifier BDT91 BY239 LLE18150X Tekelec diode

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for


    OCR Scan     		PDF bb53T31 OM2064 MEA191 DD32SD4 DD32SDS

    philips ferrite 4b1

    Abstract: No abstract text available
    Text: bb53^31 Philips Sem iconductors 0 0 3 3 4T3 303 ^HAPX pro d u ct specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology


    OCR Scan     		PDF OM2063 003S4T7 MEA200 philips ferrite 4b1

    1S1212

    Abstract: zo 103 ma MC75
    Text: Philips Semiconductors Product specification Wideband amplifier module OM2Q63 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF


    OCR Scan     		PDF OM2Q63 IS2112 1S1212 zo 103 ma MC75

    Untitled

    Abstract: No abstract text available
    Text: bb53T3:ii 003250b b27 « A P X OM2070 N AflER PHILIPS/DISCRETE bTE D _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate,


    OCR Scan     		PDF bb53T3 003250b OM2070 0Q3ES11

    OM2070

    Abstract: philips if catv amplifier
    Text: Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF


    OCR Scan     		PDF OM2070 IS2112 711005b DD157n OM2070 philips if catv amplifier

    philips ferrite 4b1

    Abstract: philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
    Text: bbS3^31 Philips Semiconductors DG324T2 205 ^HAPX Product specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology


    OCR Scan     		PDF bbS3131 OM2063 philips ferrite 4b1 philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL IPS /DI SCRE TE b^E ]> bbS3T31 0033444 SST OM361 APX _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band amplifier in hybrid integrated circuit technique on a thin-film substrate,


    OCR Scan     		PDF bbS3T31 OM361 0Q3S44fl bb53T31

    philips ferrite core 4b1

    Abstract: OM2064 ei ferrite core vHF amplifier DIAGRAM philips ferrite 4b1
    Text: Philips Sem iconductors bb53T31 DDaSHTT bh? Product specification IAPX Hybrid integrated VHF/UHF wideband amplifier OM2064 N AMER PHILIPS/DISCR ETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for


    OCR Scan     		PDF btiS3T31 0D325QS OM2064 OM2064 DM2064 philips ferrite core 4b1 ei ferrite core vHF amplifier DIAGRAM philips ferrite 4b1

    uhf tv booster circuit diagram

    Abstract: OM2070 112dBuV philips if catv amplifier
    Text: • IAPX DÜ32SDb b27 OM2070 LTE D N AMER PHILIPS/DISCRETE y HYBRID IN TEG R A TED CIRCUIT VHF/UHF W IDE-BAND A M PLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M ATV and CATV systems, and as


    OCR Scan     		PDF 0D32SDL OM2070 uhf tv booster circuit diagram OM2070 112dBuV philips if catv amplifier

    Om2061

    Abstract: No abstract text available
    Text: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.


    OCR Scan     		PDF OM2061 T-74-09-01 7Z63782 7Z837Q1 Om2061