Untitled
Abstract: No abstract text available
Text: PG2074 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5
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PG2074
Freq90MÃ
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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OCR Scan
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PDF
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
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