4218165
Abstract: PD4218165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165L, 4218165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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PD42S18165L,
4218165L
16-BIT,
4218165L
PD42S18165L
50-pin
42-pin
4218165
PD4218165
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NEC 4218165-60
Abstract: 4218165-60 4218165 PD4218165 4218165LE
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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Original
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PDF
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PD42S18165,
16-BIT,
PD42S18165
50-pin
42-pin
NEC 4218165-60
4218165-60
4218165
PD4218165
4218165LE
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MC-422000F32BA-60
Abstract: MC422000F32BA60 MC-422000F32FA-60 MC422000F32FA60 MC422000F32BA70 MC422000F32
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000F32 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-422000F32 is a 2,097,152 words by 32 bits dynamic RAM module on which 4 pieces of 16 M DRAM: /¿PD4218165 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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MC-422000F32
32-BIT
MC-422000F32
uPD4218165
C-422000F32-60
C-422000F32-70
L427S25
b42752£
MC-422000F32BA-60
MC422000F32BA60
MC-422000F32FA-60
MC422000F32FA60
MC422000F32BA70
MC422000F32
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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hilti te 24
Abstract: hilti te 17 GO 440 104 esm 433 rac
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO
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42S18165L
16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L,
4218165L
50-pin
42-pin
1R35-207-3
hilti te 24
hilti te 17
GO 440
104 esm 433 rac
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IPD42S18165-60
Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode
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16-BIT,
uPD42S18165
uPD4218165
fiPD42S18165
PD42S18165,
50-pin
42-pin
iPD42S18165-60,
PD42S18165-70,
043lg
IPD42S18165-60
tfk 014
PD42S18165
HV Tr 3
TFK 227
PD4218165
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUI' //P D 4 2 S 18 16 5 L, 4 2 18 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE D e s c rip tio n The ¿iPD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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16-BIT,
uPD42S18165L
uPD4218165L
iiPD42S18165L
PD42S18
4218165L
50-pin
42-pin
IR35-207-3
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I1244
Abstract: D42S18165 LH 446
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page
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16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L
iiPD42S18165L,
4218165L
50-pin
42-pin
1PD42S18165L-A60,
4218165L-A60
I1244
D42S18165
LH 446
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MC-421000F32BA-60
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT J E C / MC-421000F32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-421000F32 is a 1,048,576 words by 32 bits dynamic RAM module on which 2 pieces of 16M DRAM: fiPD4218165 are assembied.
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MC-421000F32
32-BIT
MC-421000F32
fiPD4218165
427SS5
M72B-G0A46
MC-421000F32BA-60
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MC-422000fA64fB-60
Abstract: MC-422000FA64-70
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000FA64FB 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE HYPER PAGE MODE Description The MC-422000FA64FB is a 1,048,576 words by 64 bits dynamic RAM module on which 8 pieces of 16 M DRAM: fiPD4218165 are assembled.
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MC-422000FA64FB
64-BIT
MC-422000FA64FB
uPD4218165
MC-422000FA64-60
MC-422000FA64-70
MC-422000fA64fB-60
MC-422000FA64-70
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT U P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE description The,uPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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16-BIT,
uPD42S18165
PD42S18165
JUPD42S18165,
50-pin
42-pin
PD42S18165,
/iPD42S18165GS,
42181SSG5:
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LM316
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MEC mPD42S18165, 4218165 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynamic RAMs w ith optional hyper page
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uPD42S18165
16-BIT,
PD42S18165,
jiPD42S18165,
50-pin
42-pin
HPD42S18165-60,
HPD42S18165-70,
/JPD42S1
S50G5-60-7JF4
LM316
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PD4218165
Abstract: NEC 4218165-60 irf 44 n
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /jPD42S1 8165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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OCR Scan
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PDF
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16-BIT,
uPD42S1
/jPD42S18165
/jPD42S18165,
50-pin
42-pin
fPD42S
//PD42S18165-70,
00818EBÍ
//PD42S18165,
PD4218165
NEC 4218165-60
irf 44 n
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MC-421000F32
Abstract: MC-421000F32BA-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-421000F32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-421000F32 is a 1,048,576 words by 32 bits dynamic RAM module on which 2 pieces of 16 M DRAM: ,uPD4218165 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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OCR Scan
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PDF
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MC-421000F32
32-BIT
MC-421000F32
uPD4218165
MC-421
OOOF32-60
MC-42100)
72B-50A4«
MC-421000F32BA-60
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