2CJQJ
Abstract: sot223 device Marking 20CJQ100 40HF EIA-541 P460
Text: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform
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PD-20480
20CJQ100
20CJQ100
OT-223
2CJQJ
sot223 device Marking
40HF
EIA-541
P460
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PDF
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SOT-227 Package
Abstract: IRFP250 UFB120FA20 0 227 200 001 SOT-227 heatsink
Text: Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 28ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape
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Original
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PD-20487
UFB120FA20
OT-227
UFB120FA20
SOT-227 Package
IRFP250
0 227 200 001
SOT-227 heatsink
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PDF
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800H
Abstract: HN29V51211 HN29V51211T-50
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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IRFP250
Abstract: UFB120FA40 ultrafast diode 10a 400v
Text: Bulletin PD-20488 12/01 UFB120FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 35ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape
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Original
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PD-20488
UFB120FA40
OT-227
UFB120FA40
IRFP250
ultrafast diode 10a 400v
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PDF
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40HF
Abstract: 60CTTN015
Text: Bulletin PD-20489 rev. A 02/03 60CTTN015 60 Amp TRENCH SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform PerDevice 60 A VRRM 15 V 1800 A 0.3 V -55 to150 °C This center tap Schottky rectifier has been optimized for low
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PD-20489
60CTTN015
to150
O-220AB
40HF
60CTTN015
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PDF
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800H
Abstract: HN29V51211T-50H
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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AH10T
Abstract: hn29w12811t-50 Hitachi DSA00170
Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル
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HN29W12811
029-sector
984-bit)
ADJ-203-551A
50/80ns
HN29W12811T-50
HN29W12811T-80
AH10T
hn29w12811t-50
Hitachi DSA00170
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD-20482 rev. A 06/98 10BF. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB DO-214AA Features Major Ratings and Characteristics Characteristics 10BF. 10 20 40 Units 60 80 Low profile package IF(AV) 1 A VRRM 100 to 800 V IFSM
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PD-20482
DO-214AA)
315x0
DO-214AA
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PDF
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PI5A4684
Abstract: GA10 PI5A4684GAE
Text: PI5A4684 Chip Scale Packaging, Dual SPDT Analog Switch Description • • • • • • • • • • • Pericom Semiconductor's PI5A4684 is a dual high-bandwidth, fast single-pole double throw SPDT CMOS switch. It can be used as an analog switch or as a low-delay bus switch. Specified
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PI5A4684
PI5A4684
10-contact
PD-2048
PI5A4684GAE
10-ball
PS8792D
GA10
PI5A4684GAE
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PDF
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300CNQ
Abstract: 300CNQ035 300CNQ040 300CNQ045
Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for
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PD-20481
300CNQ.
O-244AB
300CNQ
12-Mar-07
300CNQ035
300CNQ040
300CNQ045
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PDF
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Hitachi DSA00281
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W25611
057-sector
072-bit)
ADE-203-995C
D-85622
Hitachi DSA00281
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PDF
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800H
Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265A
800H
HN29V102414T-50
Hitachi DSA0047
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PDF
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K2111
Abstract: 800H HN29V25611AT-50H Hitachi DSA00480
Text: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The
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HN29V25611AT-50H
057-sector
072-bit)
ADE-203-1334A
HN29V25611AT-50H
K2111
800H
Hitachi DSA00480
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PDF
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SOT-227 Package
Abstract: SOT-227 heatsink irfp250 ansi UFB200FA40
Text: Bulletin PD-20486 rev. B 02/02 UFB200FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 60ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape
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PD-20486
UFB200FA40
OT-227
UFB200FA40
SOT-227 Package
SOT-227 heatsink
irfp250 ansi
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PDF
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800H
Abstract: M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11
Text: MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS 271,299,072 BITS CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities
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M5M29F25611VP
M5M29F25611
800H
M5M29F25611VP
SA10
MITSUBISHI GATE ARRAY
mitsubishi S-A11
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PDF
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DO-214AA
Abstract: DO-214AA, SMB DO-214AA diode B 80 smb code book Tape Information
Text: 10BF. Series Preliminary Data Sheet PD-20482 rev. B 06/99 Ordering Information Table Device Code 10 B F 80 1 2 3 4 1 - Current Rating x 10: 10 = 1A 2 - B = DO-214AA SMB Surface Mount 3 - F = Ultrafast Recovery 4 - Voltage code: Code = VRRM / 10 SMB Tape & Reel Information
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PD-20482
DO-214AA
DO-214AA
DO-214AA, SMB
DO-214AA diode
B 80
smb code book
Tape Information
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PDF
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10BF10
Abstract: 10BF20 10BF40 10BF60 10BF80 Device Code 10 diode 10bf60
Text: Preliminary Data Sheet PD-20482 rev. B 06/99 10BF. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB DO-214AA Features Major Ratings and Characteristics Characteristics 10BF. 10 20 40 Units 60 80 For surface mounted applications Low profile package
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Original
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PD-20482
DO-214AA)
315x0
DO-214AA
10BF10
10BF20
10BF40
10BF60
10BF80
Device Code 10
diode 10bf60
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PDF
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800H
Abstract: HN29V25611A HN29V25611AT-50 D2111
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Hitachi DSA00276
Abstract: No abstract text available
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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Original
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HN29V51211
113-sector
248-bit)
ADE-203-1221A
D-85622
Hitachi DSA00276
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PDF
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O2-A2
Abstract: 800H HN29V51211 HN29V51211T-50
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Original
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PDF
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800H
Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178A
HN29W25611T
16nents
800H
ADE-203-1178A
HN29W25611T-50H
sa 2111
Hitachi DSA00358
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PDF
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SOT-227 Package
Abstract: IRFP250 UFB200FA40
Text: Bulletin PD-20486 rev. C 10/02 UFB200FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape
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Original
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PD-20486
UFB200FA40
OT-227
UFB200FA40
SOT-227 Package
IRFP250
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform
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Original
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PD-20480
20CJQ100
20CJQ100
08-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 28ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape
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Original
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PD-20487
UFB120FA20
OT-227
UFB120FA20
08-Mar-07
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PDF
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