PCN0407
Abstract: FR4 substrate Substrate FR4 epoxy EPC16UC88 EPC16UC88AA
Text: PROCESS CHANGE NOTIFICATION PCN0407 UFBGA 88 PACKAGE SUBSTRATE CHANGE Change Description: The substrate for the 88 Lead Ultra FineLine BGA package assembled by Sharp will change from polyimide tape to glass epoxy FR4. This change does not affect form, fit, or function.
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PCN0407
EPC16UC88
EPC16UC88AA.
PCN0407
FR4 substrate
Substrate
FR4 epoxy
EPC16UC88AA
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PCN0404
Abstract: SUMITOMO g700l sumitomo EME G700L G700L TQFP 144 PACKAGE Compound SUMITOMO mold compound TQFP 144 PACKAGE altera G700
Text: PROCESS CHANGE NOTICE PCN0404 ADDITIONAL MOLD COMPOUND FOR TQFP 144 PACKAGE Change Description: The Sumitomo G700L mold compound is being added as additional mold compound choice for selected Altera devices in thin quad flat pack TQFP 144 lead packages assembled by
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PCN0404
G700L
PCN0404
SUMITOMO g700l
sumitomo EME G700L
TQFP 144 PACKAGE
Compound
SUMITOMO
mold compound
TQFP 144 PACKAGE altera
G700
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Untitled
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Golledge Electronics Ltd Fax: +44 1460 256 101 Ashwell Park, Ilminster www.golledge.com Somerset, TA19 9DX, UK PRODUCT WITHDRAWAL NOTICE Document ref: Issued: Authorised: PCN040130A v1.0 30 Jan 04 JPG Products affected GVXO-25, GVXO-61, GVXO-63, VCXO2, VCXO2H, VCXO2V
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PCN040130A
GVXO-25,
GVXO-61,
GVXO-63,
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Sn63pB37 tds
Abstract: W3E32M64S-XSBX TSOP66
Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES DDR SDRAM rate = 200, 250, 266, 333* Package: BENEFITS • 208 Plastic Ball Grid Array PBGA , 13 x 22mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#)
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W3E32M64S-XSBX
32Mx64
Sn63pB37 tds
W3E32M64S-XSBX
TSOP66
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Untitled
Abstract: No abstract text available
Text: W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% Space Savings vs. FPBGA Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count 2.5V ±0.2V core power supply
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W3E32M64S-XSBX
32Mx64
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#)
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W3E32M64S-XSBX
32Mx64
PCN04019
333Mbs
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XSBX PRELIMINARY* 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% SPACE SAVINGS vs. TSOP Package: • 43% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count
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W3E32M64S-XSBX
32Mx64
333Mbs/166MHz
PCN04019
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% Space Savings vs. FPBGA Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count 2.5V ±0.2V core power supply
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W3E32M64S-XSBX
32Mx64
PCN04019
333Mbs
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TSOP RECEIVER
Abstract: W3E32M64S-XSBX Theta JC of FBGA
Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#)
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W3E32M64S-XSBX
32Mx64
TSOP RECEIVER
W3E32M64S-XSBX
Theta JC of FBGA
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES DDR SDRAM rate = 200, 250, 266, 333*, 400* Package: BENEFITS • 208 Plastic Ball Grid Array PBGA , 13 x 22mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)
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32Mx64
333Mbs
400Mbs
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IR 936
Abstract: PCN055
Text: Rectifier Diodes ~ Stud & fiat base types Type | V RRM Range If AV ^ T"cASE ^(RMS) @25°C IF @25°C IpSM(2) 10ms 10ms V r=s 60% VR« 1 0 V I2t (2) Irrm 10ms V0 @ Tj Max. ^RRM (Note 5) (Note 2) (Note 2) (Note 1) (V) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S)
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SWXPCN012
SWxPCN020
SWxPGN030
SWxPCN040
SWxPCN055
SWXPCN075
SWXPHN300
SWxHHN300
SWxPHN320
SWXHHN320
IR 936
PCN055
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PHN300
Abstract: PCN030
Text: R ectifier D iodes ~ Stud & flat base types Type ^RR M ^F AV Range a» T ca se ^ F S M ( l) ^ F SM {2) I2 t (2) 1 10ms 10ms 10ms VR=s60% Vfi« 1 0 V IF ^ f (r m s ) @25°C @25°C I rrm v„ @ Tj Max. ^RR M (Note 5) (V) (A) (°C) (A) (A) (A) (A) (Note 2) (A2s)
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SWXPCN012
SWXPCN020
SWxPCN030
SWxPCN040
SWxPCN055
SWxPCN075
SWxPHN300
SWXHHN300
SWxPHN320
SWxHHN320
PHN300
PCN030
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pcn040
Abstract: SWXPHN400 pcn075 PCN030 SWXHHN400 11175 SWXHHN320 ST1500 SWXKBR515 SWXKBR595
Text: Rectifier D iodes ~ Stud & fiat base types V RRM Range If A V ^ T" c ASE IF @25°C ^F(RMS) @25°C IpSM (2) 10ms 10ms V r=s 60% VR« 1 0 V I2t l M* Type (2) 10ms V0 @ Tj Max. ^RBM (Note 2) (Note 2) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S) (V) SWxPCN012 200-1200
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SWXPCN012
SWxPCN020
SWxPCN030
SWxPCN040
SWxPCN055
SWXPCN075
SWXPHN300
SWxHHN300
SWxPHN320
PCN075
pcn040
SWXPHN400
pcn075
PCN030
SWXHHN400
11175
SWXHHN320
ST1500
SWXKBR515
SWXKBR595
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WESTCODE PHN400
Abstract: pcn040 21450 SW PCN040 PHN400 SW08PCN012 1520-T CXC16C CXC14C CXC935
Text: UESTCODE SEMI CONDUCTORS 3TE D • =170^53 □□□2510 T «WESB . Ordering Stud and flat-base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e.g. N012 - normal polarity, R 012 reverse
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SW08PCN012
SW12CXC300
36x30
16UNF
16UNF-2A
WESTCODE PHN400
pcn040
21450
SW PCN040
PHN400
SW08PCN012
1520-T
CXC16C
CXC14C
CXC935
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