PASSIVATION Search Results

PASSIVATION Result Highlights (5)

Part	Manufacturer	Description	Download
SF-QSFPPEXPAS-005	Amphenol Cables on Demand	Amphenol SF-QSFPPEXPAS-005 5m 40GbE QSFP+ Cable - Amphenol 40-Gigbit Ethernet Passive Copper Cable (SFF-8436 & 802.3ba) - QSFP+ to QSFP+ (16.4 ft)	Datasheet
SF-QSFPPEXPAS-001	Amphenol Cables on Demand	Amphenol SF-QSFPPEXPAS-001 1m 40GbE QSFP+ Cable - Amphenol 40-Gigbit Ethernet Passive Copper Cable (SFF-8436 & 802.3ba) - QSFP+ to QSFP+ (3.3 ft)	Datasheet
SF-NDAAFF100G-001M	Amphenol Cables on Demand	Amphenol SF-NDAAFF100G-001M 1m (3.3') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28	Datasheet
SF-NDVVYG0002-002M	Amphenol Cables on Demand	Amphenol SF-NDVVYG0002-002M 2m (6.6') 400GbE OSFP Cable - Amphenol 400-Gigabit Ethernet Passive Copper OSFP Cable (28 AWG) – OSFP to OSFP 2m (6.6')	Datasheet
SF-QSFPPEXPAS-007	Amphenol Cables on Demand	Amphenol SF-QSFPPEXPAS-007 7m 40GbE QSFP+ Cable - Amphenol 40-Gigbit Ethernet Passive Copper Cable (SFF-8436 & 802.3ba) - QSFP+ to QSFP+ (23 ft)	Datasheet

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Carling Technologies PIN-HANDLE-TIE-2P-PASSIVATION PIN HANDLE TIE 2P PASSIVATION
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PIN-HANDLE-TIE-2P-PASSIVATION	Bulk			368	1 - 10 - 100 - 1000 $0.14766 10000 $0.14766	Buy Now
SPRINGS 70110S + PASSIVATION
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Bisco Industries	70110S + PASSIVATION		10			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Carling Technologies PINHANDLETIE2PPASSIVATION Switch Hardware
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Sager	PINHANDLETIE2PPASSIVATION					1 - 10 - 100 - 1000 - 10000 -	Buy Now

PASSIVATION Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5SMY 12J1721 Abstract: No abstract text available Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage	Original	PDF	12J1721 CH-5600 5SMY 12J1721
TPSMA*A Abstract: No abstract text available Text: TPSMA6.8 thru TPSMA43A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology	Original	PDF	TPSMA43A DO-214AC J-STD-020, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TPSMA*A
Untitled Abstract: No abstract text available Text: microtech GmbH electronic Teltow Chip resistors - Made in Germany ISO/TS 16949:2009 Thick film series - Standard Type: CDF Sizes: 0402, 0603, 0805, 1206 Characteristics: • • • • • • • Chip resistors in thick film technology Resistance area coated with glass and varnish passivation	Original	PDF	1000h
Untitled Abstract: No abstract text available Text: P6KA6.8 thru P6KA43A Vishay General Semiconductor PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high	Original	PDF	P6KA43A DO-204AC DO-15) 22-B106 AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
MBRA340T3G Abstract: DIODE marking code A34 Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRA340T3G, NRVBA340T3G MBRA340T3/D MBRA340T3G DIODE marking code A34
MBRS360T3G Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3 Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3
NRVBS2040LT3G Abstract: 403A-0 MBRS2040LT3G Text: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation	Original	PDF	MBRS2040LT3G, NRVBS2040LT3G AEC-Q101 MBRS2040LT3/D 403A-0 MBRS2040LT3G
Untitled Abstract: No abstract text available Text: 16RIA Series Vishay High Power Products Medium Power Thyristors Stud Version , 16 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package	Original	PDF	16RIA O-208AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
3BZ marking Abstract: TABLE200 3By marking 3KASMC 3bm -3.3 marking 3Bk Text: 3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology	Original	PDF	3KASMC10 3KASMC43A J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AB 2011/65/EU 2002/95/EC. 3BZ marking TABLE200 3By marking 3KASMC 3bm -3.3 marking 3Bk
AXP 188 Abstract: btp 128 550 BDP 162 DO-220AA J-STD-002 AXP 209 btp 129 MARKIN CODE 324 arp Text: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount PAR Transient Voltage Suppressors FEATURES ® • Junction passivation optimized design passivated anisotropic rectifier technology eSMP Series • TJ = 185 °C capability suitable for high reliability	Original	PDF	TPSMP43A DO-220AA J-STD-020, 11-Mar-11 AXP 188 btp 128 550 BDP 162 DO-220AA J-STD-002 AXP 209 btp 129 MARKIN CODE 324 arp
J-STD-002 Abstract: TPSMC10 TPSMC10A Text: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology	Original	PDF	TPSMC47A DO-214AB J-STD-020, AEC-Q101 11-Mar-11 J-STD-002 TPSMC10 TPSMC10A
EPA240D Abstract: No abstract text available Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	PDF	EPA240D 33dBm EPA240D
L 9101 Abstract: HSCH-9101 HSCH-9201 HSCH-9251 VF10 HSCH9201 Text: Agilent HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation HSCH-9201 Description	Original	PDF	HSCH-9101/9201/9251 HSCH-9201 HSCH-9101 HSCH-9201 HSCH-9251 CH-9201. 10E-5 10E-13 5965-8851E 5988-1897EN L 9101 VF10 HSCH9201
EPA040A Abstract: No abstract text available Text: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	PDF	EPA040A 18GHz 12GHz EPA040A

G200 Abstract: f 0952 Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.	Original	PDF	P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 f 0952
marking code onsemi Diode B34 Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34 Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D marking code onsemi Diode B34 b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
EFA040A-70 Abstract: PT 1132 Text: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EFA040A-70 70mil 12GHz 18GHz EFA040A-70 PT 1132
EFA080A-70 Abstract: No abstract text available Text: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EFA080A-70 70mil 12GHz 18GHz EFA080A-70
TGF1350 Abstract: No abstract text available Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation	OCR Scan	PDF	TGF1350 TGF1350
BUD620 Abstract: E2 p SMD Transistor Text: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate	OCR Scan	PDF	BUD620 BUD620 D-74025 18-Jul-97 E2 p SMD Transistor
Untitled Abstract: No abstract text available Text: SLSD-71N1 SILO NEX Solderable Planar Photodiode Features • Visible to IR spectral range • High reliability, oxide passivation • High open circuit voltage • Linear short circuit current • Low capacitance, high speed • Solderable contacts 0.200 0.040	OCR Scan	PDF	DATA01SC 25mw/cm` 880nm
2N65s Abstract: S2003LS1 S4003LS3 T106A1 EC103A S2003LS3 T106F1 S4003LS2 S6003LS2 KT106 Text: à ? vV TECCOR ELECTRONICS, INC. A S IE B E COMPANY 1801 H U RD D R IV E IR V IN G , T E X A S 75038-4385 PH O N E 214/580-1515 FA X 214/550-1309 TO-92 TO-202AB TH ERM O TAB TO-220AB SENSITIVE SCRs 0.8 - 10 Amps G EN ER A L DESCRIPTION G LA S S PASSIVATION	OCR Scan	PDF	O-202AB O-220AB 2N65s S2003LS1 S4003LS3 T106A1 EC103A S2003LS3 T106F1 S4003LS2 S6003LS2 KT106
13005 2 transistor Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT Text: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage	OCR Scan	PDF	TD13004 TD13005 TD13ig T02S1 T0252 13005 2 transistor D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Untitled Abstract: No abstract text available Text: T e m ic BUF660 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation	OCR Scan	PDF	BUF660 D-74025 18-Jul-97

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PASSIVATION Search Results

PASSIVATION Result Highlights (5)

PASSIVATION Price and Stock

Carling Technologies PIN-HANDLE-TIE-2P-PASSIVATION

SPRINGS 70110S + PASSIVATION

Carling Technologies PINHANDLETIE2PPASSIVATION

PASSIVATION Datasheets Context Search

5SMY 12J1721

TPSMA*A

Untitled

Untitled

MBRA340T3G

MBRS360T3G

NRVBS2040LT3G

Untitled

3BZ marking

AXP 188

J-STD-002

EPA240D

L 9101

EPA040A

G200

marking code onsemi Diode B34

EFA040A-70

EFA080A-70

TGF1350

BUD620

Untitled

2N65s

13005 2 transistor

Untitled