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    PART MARKING ST MOSFETS Search Results

    PART MARKING ST MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    PART MARKING ST MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    92196A146

    Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 92196A146 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr

    Untitled

    Abstract: No abstract text available
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		PDF STAC2932B 2002/95/EC STAC244B STAC2932B DocID15497

    Bead 220 ohm 2.5A

    Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
    Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 Bead 220 ohm 2.5A VK200 marking code transistor ND sd2931-10w

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    ZENER MARKING C8 ST

    Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
    Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS


    Original     		PDF SD2932 SD2932 SD2932W ZENER MARKING C8 ST CAPACITOR 64 680 4J diode t25 4 L5 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b

    sd2931-10w

    Abstract: marking code oz 09-Sep-2004
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004

    sd4931

    Abstract: No abstract text available
    Text: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF SD4931 2002/95/EC SD4931

    SD2933W

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		PDF SD2933 SD2933 SD2933W SD2933W

    resistor 560 ohm

    Abstract: SD2933
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		PDF SD2933 SD2933 resistor 560 ohm

    Untitled

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metalization • Excellent thermal stability • Common source configuration • POUT = 300 W min. with 20 dB gain @ 30 MHz • Thermally enhanced packaging for lower


    Original     		PDF SD2933 SD2933 DocID7193

    FERRITE TOROIDAL CORE DATA

    Abstract: STAC2932B ferrite toroidal
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2932B 2002/95/EC STAC244B STAC2932B STAC2932 FERRITE TOROIDAL CORE DATA ferrite toroidal

    stac2942

    Abstract: No abstract text available
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942BW STAC2942 DocID15501 stac2942

    stac2942

    Abstract: STAC2942B FERRITE TOROID transistor marking code HF
    Text: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC2942B STAC244B STAC2942 FERRITE TOROID transistor marking code HF

    sd2942

    Abstract: SD2942w SD2942 equivalent RG316-25 POWER500 marking 16
    Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS


    Original     		PDF SD2942 SD2942 SD2932. SD2942W SD2942w SD2942 equivalent RG316-25 POWER500 marking 16

    mallory date code

    Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European


    Original     		PDF SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 92196A146 1200 uF 63V capacitor arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177

    C1812X7R501-103KNE

    Abstract: ATC200B103KW50X ELNA America Elna axial ELNA RVS 2643801002 elna 50v sd2918 M113 RVS-50V100M-R
    Text: SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description M113 Epoxy sealed The SD2918 is a n-channel MOS field-effect RF


    Original     		PDF SD2918 SD2918 C1812X7R501-103KNE ATC200B103KW50X ELNA America Elna axial ELNA RVS 2643801002 elna 50v M113 RVS-50V100M-R

    sd4931

    Abstract: ee marking st marking st 2464 st marking ee
    Text: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC european


    Original     		PDF SD4931 2002/95/EC SD4931 ee marking st marking st 2464 st marking ee

    FERRITE TOROID

    Abstract: ST406 measure current toroid 200 pF air variable capacitor
    Text: STAC2932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2932F 2002/95/EC STAC244F STAC2932F FERRITE TOROID ST406 measure current toroid 200 pF air variable capacitor

    STMicroelectronics marking code date

    Abstract: Date Code Marking STMicroelectronics stmicroelectronics datecode STMicroelectronics date CODE Part Marking STMicroelectronics STMicroelectronics date marking CODE marking code stmicroelectronics STMicroelectronics code date marking DATE code stmicroelectronics STMicroelectronics PRODUCT code date
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/ CT/ 0C27 CATANIA, Jul 17th 2000 DSG Discrete and Standard Circuits Group Catania POWER MOS SILICON LINE CHANGE FOR THE INDUSTRY STANDARDS: IRF820 INVOLVED P&L FAMILY: 29 PRODUCT FAMILY: POWER MOSFETs WHAT : FOLLOWING UP THE DIVISIONAL PROGRAM AIMED AT DEVELOPING NEW


    Original     		PDF IRF820 O-220 DSG/CT/0C27 OP271/272 STMicroelectronics marking code date Date Code Marking STMicroelectronics stmicroelectronics datecode STMicroelectronics date CODE Part Marking STMicroelectronics STMicroelectronics date marking CODE marking code stmicroelectronics STMicroelectronics code date marking DATE code stmicroelectronics STMicroelectronics PRODUCT code date

    SD2941-10

    Abstract: EE-19 transformer SD2931-10 VK200
    Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower


    Original     		PDF SD2941-10 175MHz SD2941-10 SD2931-10. EE-19 transformer SD2931-10 VK200

    STAC2942

    Abstract: STAC244 STAC2942B-I FERRITE TOROID R4270
    Text: STAC2942B-I RF power transistor HF/VHF/UHF N-channel MOSFETs Custom data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B-I 2002/95/EC STAC2942B-I STAC244B STAC2942 STAC2942 STAC244 FERRITE TOROID R4270

    STAC2942F

    Abstract: FERRITE TOROID 43 toroid core stac2942
    Text: STAC2942F RF power transistor HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942F 2002/95/EC STAC244F STAC2942F FERRITE TOROID 43 toroid core stac2942

    STAC2942B

    Abstract: stac2942 FERRITE TOROID R0060
    Text: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942 stac2942 FERRITE TOROID R0060

    STAC4932

    Abstract: STAC4932F st marking code STAC244F 1715
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932 st marking code STAC244F 1715