AN32155
Abstract: UBGA024-W-2525AEL
Text: Package Standards Total pages Page 6 2 1. Outline Drawing Unit:mm Package Code : UBGA024-W-2525AEL Body Material Br / Sb Free : Epoxy Resin Reroute Material : Cu Bump - - Established Revised : SnAgCu Exclusive use for AN32155A Semiconductor Company, Panasonic Corporation
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UBGA024-W-2525AEL
AN32155A
AN32155
UBGA024-W-2525AEL
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Pressure Sensors
Abstract: No abstract text available
Text: Circuit Components Catalog Pressure sensor Built-in amplifier and compensating circuit S Package M Package New L Package P Package RoHS compliant PS-A PRESSURE SENSOR FEATURES TYPICAL APPLICATIONS 1. Contains built-in amplification and temperature compensation circuit.
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ASCTB244E
201303-T
Pressure Sensors
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AN30259A
Abstract: XBGA012-W-1316AEL RESIN molding epoxy resin BGA OUTLINE DRAWING AN3025
Text: Package Standards 1. Outline Drawing Total pages Page 6 2 Unit:mm Package Code : XBGA012-W-1316AEL Body Materia l : Br/Sb Free Epoxy resin Reroute Material : Cu Bump - - Established Revised : SnAgCu Exclusive use for AN30259A Semiconductor Company, Panasonic Corporation
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XBGA012-W-1316AEL
AN30259A
Br/S09-05
AN30259A
XBGA012-W-1316AEL
RESIN
molding
epoxy resin
BGA OUTLINE DRAWING
AN3025
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Untitled
Abstract: No abstract text available
Text: PS-A ADP5 Pressure sensor Built-in amplifier and compensating circuit S Package M Package L Package P Package PS-A PRESSURE SENSOR FEATURES TYPICAL APPLICATIONS 1. Contains built-in amplification and temperature compensation circuit. Circuit design and adjustment of
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100713J
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panasonic dual band vco
Abstract: No abstract text available
Text: High-performance GaAs switch IC with Panasonic’s thinnest package Small packaged DPDT GaAs switch IC for general RF use Overview A high RF performance GaAs switch IC is packed into Panasonic’s thinnest package of 0.4mm thickness. The product realizes minimization and loss improvement for
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500MHz
M00663AE
panasonic dual band vco
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LE79271
Abstract: Le79238 LE79124 ATIS-0600016 dpdt mechanical relays 3v GR-909 MMBTA92 vtds fxs interface integrated circuit AGN200A
Text: Le79234-SW TM VoiceEdge Control Processor Software Package Next Generation Carrier Chipset NGCC Data Sheet Applications • Call Control Package • • • • Document ID#:133545 Version 1 July 2009 Ordering Information Call Control Functions Basic Test Package
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Le79234-SW
GR909
Le79234SLNT
Le79234SLBT
Le79234SLAT
Le79234SLATP
GR844
LE79271
Le79238
LE79124
ATIS-0600016
dpdt mechanical relays 3v
GR-909
MMBTA92
vtds
fxs interface integrated circuit
AGN200A
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thermistor 100k
Abstract: ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt
Text: SLD-1026Z 3 Watt Discrete LDMOS Device Plastic Surface Mount Package SLD-1026Z Preliminary 3 WATT DISCRETE LDMOS DEVICE PLASTIC SURFACE MOUNT PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Z Part Number Package: SOF-26 Product Description
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SLD-1026Z
SOF-26
SLD-1026Z-EVAL-2
SLD-1026Z-EVAL-3
SLD-1026Z-EVAL-4
SLD-1026Z-EVAL-5
SLD-1026Z-EVAL-6
SLD-1026Z-EVAL-7
thermistor 100k
ECJ-2YB1H104K
ecj2yb1h104k
smd transistor ne c2
transistor SMD DK
ERJ3GSY0R00V
philips thermistor 250 ohm
RK73ZETTP
600S0R5BT250XT
600s3r3bt250xt
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Untitled
Abstract: No abstract text available
Text: Automation Controls Catalog Highly efficient reflection package for proximity sensor Package AAM11 Series for IR LED Module FEATURES 1. Realization of small, low-profile reflector package through application of our unique MID* technology MIPTEC Individual piece: 2.3 x 1.95 × 0.9 mm
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AAM11
ACCTB54E
201303-T
AAM11
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Untitled
Abstract: No abstract text available
Text: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package High-speed switching Incorporating a built-in gate protection-diode Two elements incorporated into one package SSMini type package, reduction of the mounting area and assembly cost
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UP0187BG
2SK3938
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UP0187BG
Abstract: 2SK3938 UP0187B
Text: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package High-speed switching Incorporating a built-in gate protection-diode Two elements incorporated into one package SSMini type package, reduction of the mounting area and assembly cost
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UP0187BG
2SK3938
UP0187BG
2SK3938
UP0187B
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2SK3938
Abstract: UP0187B UP0187BG
Text: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package High-speed switching Incorporating a built-in gate protection-diode Two elements incorporated into one package SSMini type package, reduction of the mounting area and assembly cost
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UP0187BG
2SK3938
UP0187B
UP0187BG
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FK3F0301
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FK3F0301 Silicon N-channel MOS FET For switching circuits FK330301 in Lead-less type package • Overview Package FK3F0301 is N-channel small signal MOS FET employed small size surface mounting package.
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2002/95/EC)
FK3F0301
FK330301
FK3F0301
FK3F03010L
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CU-106A
Abstract: 0.4mm pitch BGA IPC-6012A beagleboard 0.4mm pitch BGA routing IPC-6012 IPC-D-317 NAND FLASH LGA reflow profile CU-106A shelf life CBB Capacitor Selection Guide
Text: Application Report SPRAAV1B – May 2009 PCB Design Guidelines for 0.4mm Package-On-Package PoP Packages, Part I Keith Gutierrez and Gerald Coley . ABSTRACT
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SLD-3091FZ
Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Text: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features 30 Watt Output P1dB
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SLD-3091FZ
SLD-3091FZ
EDS-104668
SLD3091FZ
GaN Bias 25 watt
InP transistor HEMT
915 MHz RFID
27PF
A191
22UF
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PACKAGE PANASONIC
Abstract: TRANSISTORS SELECTION GUIDE
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for T V and Monitor Display A Tentative (Package Symbol) TOP-3F =TO P-3 Type Full Package, TOP-3 Type Large Package. TO-22Q(F) =TO-22Q Type Full Pack Package. Panasonic
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O-22Q
PACKAGE PANASONIC
TRANSISTORS SELECTION GUIDE
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MIP0122SY
Abstract: MIP0123SY MIP0222 MIP0222SY MIP0125SY TOP224Y TOP222Y top223y mip0223sy mip0223
Text: Panasonic Provides several enhancements over the first generation THE SECOND GENERATION THREE TERMINAL PACKAGE INTELLIGENT POWER DEVICE SERIES FOR PWM CONVERTER Package photograph Feature • Integrated PWM controller and 700Y high voltage MOSFET in three terminal.
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264VAC)
D00025CE
O-220
MIP022X
O-220
T0-220
MIP0122SY
MIP0123SY
MIP0222
MIP0222SY
MIP0125SY
TOP224Y
TOP222Y
top223y
mip0223sy
mip0223
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top224y
Abstract: MIP0222 MIP0223SY MIP0223 MIP0222SY TOP122Y MIP0122SY MIP0226SY TOP226Y MIP0225SY
Text: Panasonic Provides several enhancements over the first generation THE SECOND GENERATION THREE TERMINAL PACKAGE INTELLIGENT POWER DEVICE SERIES FOR PWM CONVERTER • ■ ■ Feature ■ Package photograph •Integrated PWM controller and 700V high voltage MOSFET in three terminal.
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264VAC)
T0-220
OP129Y
D00025CE
MIP022X
O-220
top224y
MIP0222
MIP0223SY
MIP0223
MIP0222SY
TOP122Y
MIP0122SY
MIP0226SY
TOP226Y
MIP0225SY
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UN211H
Abstract: UN2211
Text: Transistors Selection Guide by Applications and Functions # Transistors with built-in Resistor (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package) 136 Panasonic Transistors (Selection Guide by Applications and Functions) Main Characteristics
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UN2211
UN2212
UN2213
UN2214
UN2215
UN2216
UN2217
UN2218
UN2219
UN2210
UN211H
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hologram unit
Abstract: HUH7801 795-820 253c
Text: Panasonic Hologram Unit HUH7801 Unit : mm Laser Unit For optical information processing • Features • Package size 4.8 X 8.2 X 2.55 mm • Package integrating laser and photodetector • No holograms ■ Application • PD ■ Absolute Maximum Ratings
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HUH7801
hologram unit
HUH7801
795-820
253c
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Untitled
Abstract: No abstract text available
Text: Panasonic Small Package Reflective Photo-interrupter Series 0N2170/2270,CNB1001/1002/2001 ,CNB2003 • ■ Features Package photograph •M iniature and thin type:2.7x3.4mm Height 1.5mm •P lastic resin to cut-off visible light is used •E asy interface to control circuit
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0N2170/2270
CNB1001/1002/2001
CNB2003
2170/CN
B1001
ON2270/CNB2001/CNB2003
ON2170/ON2270
1002/CNB2001
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ON2170
Abstract: optical interrupter darlington phototransistor 3 pin "Photo Interrupter" Application Note 3 pin phototransistor ic 1001 1002 phototransistor visible light CNB2003 ON2270 CNB1002
Text: Panasonic Small Package Reflective Photo-interrupter Series ON2170/2270,CNB1001/1002/2001 ,CNB2003 • ■ Features Package photograph •M iniature and thin type:2.7x3.4mm Height 1.5mm •P lastic resin to cut-off visible light is used •E asy interface to control circuit
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ON2170/2270
CNB1001/1002/2001
CNB2003
ON2170/CNB1001
/CNB1002
ON2270/CNB2001
/CNB2003
ON2170/ON2270
1001/CNB1002/CNB2001
ON2170
optical interrupter darlington
phototransistor 3 pin
"Photo Interrupter" Application Note
3 pin phototransistor
ic 1001 1002
phototransistor visible light
CNB2003
ON2270
CNB1002
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Untitled
Abstract: No abstract text available
Text: Panasonic G aAs M M ICs GN4002 GaAs N-Channel IC Unit : mm For high-frequency small-power SPDT switch • Features • Low insertion loss : LOSS= 0.6dB • High isolation : ISO= 30dB • Small package : Mini-type 6-pin package ■ Absolute Maximum Ratings
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GN4002
Charact120
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN2012 GaAs N-Channel IC Unit : mm For UHF band mixer • Features • Large-capacitance capacitor built-in external bypass capacitor not necessary • Low distortion (IP3=12dBm) • High conversion gain (CG=12dB) • Small package : S-mini type 5-pin package
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GN2012
12dBm)
83MHz
390nH
100pF
1000pF
100MHz
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SSMini
Abstract: No abstract text available
Text: Panasonic S w itc h in g Diodes MA137 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 0.80 0 .8 0 ± 0.05 I Features Small SS-Mini type package with two incorporated elements, en abling high-density mounting Series connection in package
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MA137
100mA
100pA
100MHz
N-50BU
SSMini
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