J15D
Abstract: J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101
Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: Laser Components GmbH, Germany, Phone: 0049 0 8142 28640, www.lasercomponents.com J15 Mercury Cadmium Telluride Detectors (2 to 26 µm) General Detector Bias and Operating Circuit D* and Responsivity vs. Bias
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allo142
J15D
J15D16-M204-S01M-60
W1 466C
DE1M
J15D14
J15D14-M204-S500U-60
J15-D
5-3CN-S01M
gold metal detectors
PA-101
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Pyroelectric Detectors
Abstract: schematic insb W1 466C PA-101 capacitor RC 65 8142 T gold metal detectors J15-IN J15TE2 HgCdTe TE cooled GE detector
Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, [email protected] Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, [email protected]
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D1065
Abstract: D0865
Text: Chipscale Termination Arrays ISO-9001 Registered High purity alumina substrate • • • • Superior TaNFilm resistors on ceramic substrate High density networks on a reduced footprint Excellent solution for thin, portable products Custom array solutions also available
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ISO-9001
D1065A
D0865B
D1065B
CD0865
CD1065
CD0865
100ppm/
Issue16OCT01
D1065
D0865
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35 x 35 PBGA, 580 100 balls
Abstract: Enplas drawings HG7900 BGA Ball Crack 153pin NEC stacked CSP 2000 PEAK TRAY bga BGA-35 Lead Free reflow soldering profile BGA NEC stacked CSP
Text: High Performance! Contents Contents 1. What is a BGA Ball Grid Array ? _ 3 2. Varieties of NEC's BGA _ 3 3. Advantages _ 4 4. Photographs _ 6 5. Line-up_ 8
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C13550EJ1V0PF00
35 x 35 PBGA, 580 100 balls
Enplas drawings
HG7900
BGA Ball Crack
153pin
NEC stacked CSP 2000
PEAK TRAY bga
BGA-35
Lead Free reflow soldering profile BGA
NEC stacked CSP
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CD 8403
Abstract: S268P
Text: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides
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S268P
D-74025
CD 8403
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106 10k 804
Abstract: 106F 213B
Text: CTS ClearONE Terminator Reliability Test Data RELIABILITY TEST DATA Table of Contents BGA RESISTOR ARRAY DESIGN VALIDATION TEST PLAN .3 DESIGN VERIFICATION PLAN &
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motherboard vrm circuit
Abstract: signal path designer
Text: Decoupling Solutions John Prymak, Erik Reed, Michael Randall, Peter Blais, Bill Long KEMET Electronics Corporation, 2835 KEMET Way, Simpsonville, SC 29681 Phone: +1-864-963-6573, FAX: +1-864-967-6867 e-mail: [email protected] Abstract Integrated circuit IC technology has advanced over time, requiring innovative decoupling solutions that address
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S268P
Abstract: silicon photodiode array
Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
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S268P
S268P
D-74025
20-May-99
silicon photodiode array
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JEDEC JESD22-B117
Abstract: JESD22-B117 Solder Paste, Indium 5.8 N41 250 y 803 IPC-9504 10k resistor 1/8 watt datasheet hot air bga Solder Paste, Indium 5.1, Type 3 10k resistor 1/4 watt datasheet
Text: RELIABILITY TEST DATA Table of Contents BGA RESISTOR ARRAY DESIGN VALIDATION TEST PLAN .3 DESIGN VERIFICATION PLAN & REPORT .4
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S268P
Abstract: No abstract text available
Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
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S268P
S268P
D-74025
20-May-99
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S268P
Abstract: Photodiode Array
Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
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S268P
S268P
D-74025
20-May-99
Photodiode Array
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S268P
Abstract: No abstract text available
Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant
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S268P
S268P
D-74025
15-Jul-96
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S268P
Abstract: No abstract text available
Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
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S268P
S268P
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
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S268P
S268P
08-Apr-05
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8-Port Fast Ethernet Switch
Abstract: ELAN-1X100 1x100 PM3350 PM3351 8 port ethernet switch ASN.1 A10 ASN.1 A11
Text: PM3350 APPLICATION NOTE PMC-971171 ISSUE 1 PM3350 ELAN 8X10 8 PORT ETHERNET SWITCH PM3350 ELAN8X10 ANSWERS TO FREQUENTLY ASKED QUESTIONS REGARDING THE PM3350 ELAN-8X10 DEVICE ISSUE 1: FEBRUARY 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000
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PM3350
PMC-971171
PM3350
ELAN8X10
ELAN-8X10
8-Port Fast Ethernet Switch
ELAN-1X100
1x100
PM3351
8 port ethernet switch
ASN.1 A10
ASN.1 A11
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ELAN-1X100
Abstract: 1X100 PM3350 PM3351
Text: PM3351 APPLICATION NOTE PMC-971167 ISSUE 1 PM3351 ELAN 1X100 ETHERNET SWITCH PM3351 ELAN 1X100 ANSWERS TO FREQUENTLY ASKED QUESTIONS REGARDING THE PM3351 ELAN-1X100 DEVICE ISSUE 1: FEBRUARY 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000
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PM3351
PMC-971167
PM3351
1X100
1X100
ELAN-1X100
PM3350
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lem lt 100 p
Abstract: P791-01
Text: PbSe Photoconductive Detectors Capable of detecting to 5 pm range TE-cooled types • High-speed response • Operates at room temperature Com pared to other types o f detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at
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KIRDB0054EA
KIRDB0056EA
P3207-04)
650nm
KIRDB0057EA
lem lt 100 p
P791-01
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diode matrix hm1
Abstract: HM1-0104 HM1-0168 diode matrix harris HM-0104 HM-0110 HM-0168 HM-0186 HM1-0110 HM1-0186
Text: æ HM-0110 4x10 HM-0168 ( 6 x 8 ) HM-0104 (IOx 4) HARRIS SEM IC O N D U C T O R _ _ HM-0186 ( 8x 6) Commercial Diode Matrices DESCRIPTION PACKAGI CODE 1A T O -1 16(14 LEA D C ER A M IC D.I.P) The commercial diode matrices are arrays of passivated sili
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M-0110
HM-0168
HM-0104
HM-0186
14-lead
O-116
HM1-0104
HM1-0168
HM1-0186
HM1-0110
diode matrix hm1
HM1-0104
HM1-0168
diode matrix harris
HM-0104
HM-0110
HM-0168
HM-0186
HM1-0110
HM1-0186
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P2680-01
Abstract: P4115
Text: PbSe Photoconductive Detectors Spectral Response Range: 1.5 to 5.1 |um Detection capability up 5 urn range TE-cooled types TE-cooled types ensure stable and reliable m easurem ent over ex tended time periods. •High-speed response ■Room temperature operation
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RETICON CA10A
Abstract: RETICON CA10A RETICON RF R00064N R00064NAG-011 automatic clock room light reticon photodiode linear array reticon photodiode array RC00640NB-011
Text: E G a G RETICON lñE D 3D3073Ô a a a 3 n 7 ? R00064N Self-Scanned Circular Photodiode Array : " r 4 !-SS The R00064N is the first self-scanned photodiode array available in a circular configuration. The device will find appli cation in such fields as tracking, alignment, pattern recogni
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3D3073Ô
R00064N
R00064N
R00064NAG-011
RC00640NB-011
RETICON CA10A
RETICON
CA10A
RETICON RF
automatic clock room light
reticon photodiode linear array
reticon photodiode array
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Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.
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C4159
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
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Glass Thermometers
Abstract: 15V temperature controller peltier peltier effect element 9x104
Text: PbS Photoconductive Cells Easy-to-Use Photoconductive Detectors with High Responsivity Over 3 jjl m PbS cells make use of the photoconductive effect by which the elec trical resistance decreases with application o f infrared radiation Operates at Room Temperature
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KIRDB0048EA
KIRDB0049EA
KIHDB0050EA
Glass Thermometers
15V temperature controller peltier
peltier effect element
9x104
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pr 8501 b
Abstract: P394A P3226-02 P3226 PBS P394 series
Text: PbS Photoconductive Detectors Easy-to-use photoconductive detec tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame
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KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
K3413-01,
P3981-01,
pr 8501 b
P394A
P3226-02
P3226 PBS
P394 series
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TO8 16 pin Peltier
Abstract: No abstract text available
Text: PbSe Photoconductive Cells Capable of Detecting to The 5 n m Range TE-cooled Types PbSe cells operates on the same principle as in PbS cells, but can be used to detect longer wavelengths up to or over 5 // m. In particular, T E -cooled types en su re stable and reliable m easurem ent o v e r ex
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KIRDB0056EA
P3207)
650nm
TO8 16 pin Peltier
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