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    P5182 Price and Stock

    onsemi NCP51820AMNTWG

    IC GATE DRVR HALF-BRIDGE HI SPD
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    DigiKey NCP51820AMNTWG Cut Tape 5,493 1
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    NCP51820AMNTWG Digi-Reel 5,493 1
    • 1 $3.19
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    NCP51820AMNTWG Reel 4,000 4,000
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    Avnet Americas NCP51820AMNTWG Reel 20 Weeks 4,000
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    Mouser Electronics NCP51820AMNTWG 46,151
    • 1 $2.26
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    Newark NCP51820AMNTWG Cut Tape 6,849 1
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    NCP51820AMNTWG Reel 4,000
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    TME NCP51820AMNTWG 1
    • 1 $2.46
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    Richardson RFPD NCP51820AMNTWG 8,000 4,000
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    Avnet Asia NCP51820AMNTWG 20 Weeks 4,000
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    Avnet Silica NCP51820AMNTWG 21 Weeks 4,000
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    EBV Elektronik NCP51820AMNTWG 22 Weeks 4,000
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    Master Electronics NCP51820AMNTWG 8,000
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    Wuhan P&S NCP51820AMNTWG 1,654 1
    • 1 $2.65
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    onsemi NCP51820GAN1GEVB

    EVAL BOARD FOR NCP51820
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    DigiKey NCP51820GAN1GEVB Box
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    Mouser Electronics NCP51820GAN1GEVB
    • 1 $68.75
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    Newark NCP51820GAN1GEVB Bulk 1
    • 1 $71.5
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    Avnet Silica NCP51820GAN1GEVB 17 Weeks 1
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    onsemi NCP51820GAN2GEVB

    EVAL BOARD FOR NCP51820
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    DigiKey NCP51820GAN2GEVB Box 1
    • 1 $69.71
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    Avnet Americas NCP51820GAN2GEVB Bulk 1
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    Marsh Instruments P5182 (ALTERNATE: P5182)

    Pressure Gauge, 4.5" PP Case, SS Internals, 1/4" Lower Mount, 0-5000 psi | Marsh Instruments P5182
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    RS P5182 (ALTERNATE: P5182) Bulk 3 Weeks 1
    • 1 $175.91
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    Panasonic Electronic Components ECA-1HM101

    Aluminum Electrolytic Capacitors - Radial Leaded 100uF 50V
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    TTI ECA-1HM101 Bulk 35,500 100
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    Find more P5182 price and stock on Findchips.com

    P5182 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G200

    Abstract: f 0952
    Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 f 0952

    0.047 mf capacitor

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 0.047 mf capacitor

    500 watts amplifier schematic diagram

    Abstract: OZ 960 OZ 960 S G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF P4525-ND P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram OZ 960 OZ 960 S G200

    500 watts amplifier schematic diagram

    Abstract: NGT 03 G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF 70pacitor, P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram NGT 03 G200

    jx 903

    Abstract: f10107 PTF 10107 ptf10107 ge-14 transistor
    Text: GOLDMOS PTF 10107 Field Effect Transistor 5 Watts, 2.0 GHz Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P5182 1-877-GOLDMOS 1522-PTF jx 903 f10107 PTF 10107 ptf10107 ge-14 transistor

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
    Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210901 PTF210901 CW 7805 CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350

    AT27280

    Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
    Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTFA212002E PTFA212002E 200-watt, AT27280 variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 SMD TRANSISTOR MARKING 904

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149
    Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched, 70 Watt LDMOS FET intended for cellular and GSM amplifier applications from 921–960 MHz. This device operates at 50% efficiency with 16 dB of gain. Nitride


    Original     		PDF 1-877-GOLDMOS 1301-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149

    infineon 018

    Abstract: No abstract text available
    Text: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization


    Original     		PDF PTF180101 PTF180101 infineon 018

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    PCC103BCT-ND

    Abstract: capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR
    Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5


    Original     		PDF PC56106-ND PCC103BCT-ND P5182-ND 220ECT-ND 1-877-GOLDMOS 1522-PTF PCC103BCT-ND capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR

    resistor 220 ohm

    Abstract: G200 10137
    Text: PTF 10137 GOLDMOS Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P5182 1-877-GOLDMOS 1522-PTF resistor 220 ohm G200 10137

    capacitor 100uF 50V

    Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
    Text: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface


    Original     		PDF 0805CS-080 1-877-GOLDMOS 1522-PTF capacitor 100uF 50V resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY

    Untitled

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt

    OZ 960 S

    Abstract: G200 resistor 220 ohm 20222
    Text: PTF 102027 GOLDMOS Field Effect Transistor 40 Watts, 925–960 MHz Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures


    Original     		PDF P5182-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF OZ 960 S G200 resistor 220 ohm 20222

    G200

    Abstract: 10133 capacitor 0.1 mf
    Text: PTF 10133 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with 13.5 dB of gain. Full gold metallization


    Original     		PDF 1-877-GOLDMOS 1301-PTF G200 10133 capacitor 0.1 mf

    500 watts amplifier schematic diagram

    Abstract: G200 gsm amplifier ghz 100 watts amplifier circuit diagram E7020
    Text: GOLDMOS PTF 10138 Field Effect Transistor 60 Watts, 1.0 GHz Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram G200 gsm amplifier ghz 100 watts amplifier circuit diagram E7020

    G200

    Abstract: No abstract text available
    Text: PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical


    Original     		PDF P4525-ND P5182-ND 220QBK-ND 1-877-GOLDMOS G200

    PTF210301E

    Abstract: No abstract text available
    Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation


    Original     		PDF PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F*

    PTF 10138

    Abstract: G200
    Text: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF PTF 10138 G200

    Untitled

    Abstract: No abstract text available
    Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 1522-PTF

    G200

    Abstract: 500 watts amplifier schematic diagram gsm amplifier Ericsson
    Text: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 500 watts amplifier schematic diagram gsm amplifier Ericsson

    Untitled

    Abstract: No abstract text available
    Text: PTF181301E PTF181301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF181301E and PTF181301F are thermally-enhanced, 130-watt, internally matched GOLDMOS FETs intended for GSM and EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides


    Original     		PDF PTF181301E PTF181301F 130-watt, PTF181301F*