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    P2804 Search Results

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    P2804 Price and Stock

    Semtech Corporation UCLAMP2804L.TCT

    TVS DIODE 2.8VWM 10VC 8-SOIC
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    DigiKey UCLAMP2804L.TCT Cut Tape 7,342 1
    • 1 $2.59
    • 10 $1.671
    • 100 $2.59
    • 1000 $0.84765
    • 10000 $0.84765
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    UCLAMP2804L.TCT Digi-Reel 7,342 1
    • 1 $2.59
    • 10 $1.671
    • 100 $2.59
    • 1000 $0.84765
    • 10000 $0.84765
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    UCLAMP2804L.TCT Reel 6,000 3,000
    • 1 -
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    • 10000 $0.75
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    Mouser Electronics UCLAMP2804L.TCT 4,659
    • 1 $1.79
    • 10 $1.5
    • 100 $1.03
    • 1000 $0.784
    • 10000 $0.749
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    Newark UCLAMP2804L.TCT Cut Tape 886 1
    • 1 $1.09
    • 10 $1.09
    • 100 $1
    • 1000 $0.923
    • 10000 $0.923
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    UCLAMP2804L.TCT Reel 3,000
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    • 10000 $0.9
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    Richardson RFPD UCLAMP2804L.TCT 1
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    Avnet Silica UCLAMP2804L.TCT 15 Weeks 3,000
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    Symmetry Electronics UCLAMP2804L.TCT 1
    • 1 $0.81
    • 10 $0.78
    • 100 $0.732
    • 1000 $0.732
    • 10000 $0.732
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    Soberton Inc SP-2804Y

    SPEAKER 8OHM 500MW TOP PORT 85DB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SP-2804Y Tray 4,680 1
    • 1 $1.6
    • 10 $1.302
    • 100 $1.151
    • 1000 $0.86757
    • 10000 $0.8125
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    Master Electronics SP-2804Y 250
    • 1 -
    • 10 -
    • 100 $1.19
    • 1000 $0.901
    • 10000 $0.82
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    Vishay Siliconix SIP2804DY-T1-E3

    IC OFFLINE SWITCH FLYBACK 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIP2804DY-T1-E3 Digi-Reel 2,899 1
    • 1 $1.75
    • 10 $1.285
    • 100 $1.0407
    • 1000 $0.9125
    • 10000 $0.9125
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    SIP2804DY-T1-E3 Cut Tape 2,899 1
    • 1 $1.75
    • 10 $1.285
    • 100 $1.0407
    • 1000 $0.9125
    • 10000 $0.9125
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    SIP2804DY-T1-E3 Reel
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    Soberton Inc SP-2804L

    SPEAKER 4OHM 1.5W TOP PORT 92DB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SP-2804L Tray 1,818 1
    • 1 $2.09
    • 10 $1.705
    • 100 $1.4125
    • 1000 $1.4125
    • 10000 $1.4125
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    Master Electronics SP-2804L 50
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    • 100 $1.75
    • 1000 $1.51
    • 10000 $1.39
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    Toshiba America Electronic Components TLP280-4(GB,J,F)

    OPTOISO 2.5KV 4CH TRANS 16-SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TLP280-4(GB,J,F) Tube
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    Find more P2804 price and stock on Findchips.com

    P2804 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2804BDG Niko Semiconductor N-Channel Logic Level Enhancement Original PDF
    P2804BDG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P2804BVG Niko Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    P2804BVG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P2804HVG Niko Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    P2804HVG Niko Semiconductor Dual N-Channel Enhancement FET Original PDF
    P2804ND5G Niko Semiconductor N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary Original PDF
    P2804NV Niko Semiconductor N- and P-Channel Enhancement FET Original PDF
    P2804NVG Niko Semiconductor N- & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    P2804NVG Niko Semiconductor N- and P-Channel Enhancement FET Original PDF

    P2804 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P2804

    Abstract: P2804BVG
    Text: P2804BVG N-Channel Logic Level Enhancement NIKO-SEM SOP-8 Lead-Free Mode Field Effect Transistor D 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE PRODUCT SUMMARY V BR DSS RDS(ON) ID 40V 28mΩ 7.5A G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise PARAMETERS/TEST CONDITIONS


    Original     		PDF P2804BVG SEP-30-2004 P2804 P2804BVG

    P2804ND5G

    Abstract: SEM 2005 p2804 niko P2804N g1id
    Text: NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS ON S2 G2 D1 V(BR)DSS S2


    Original     		PDF P2804ND5G O-252-5 Apr-18-2005 P2804ND5G SEM 2005 p2804 niko P2804N g1id

    P2804BDG

    Abstract: nikos P2804BDG Niko-Sem TO-252 AUG-19-2004 NIKO-SEM P2804bDG TO252-DPAK niko-sem p2804
    Text: NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 28mΩ 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2804BDG O-252 AUG-19-2004 P2804BDG nikos P2804BDG Niko-Sem TO-252 AUG-19-2004 NIKO-SEM P2804bDG TO252-DPAK niko-sem p2804

    SEM 2004

    Abstract: NIKO-SEM Niko Semiconductor P2804 P2804NV
    Text: P2804NV N- & P-Channel Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOP-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P2804NV May-12-2004 SEM 2004 NIKO-SEM Niko Semiconductor P2804 P2804NV

    P2804HVG

    Abstract: No abstract text available
    Text: P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 40 28mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2804HVG AUG-19-2004 P2804HVG

    P2804NVG

    Abstract: No abstract text available
    Text: P2804NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P2804NVG 15Diode AUG-19-2004 P2804NVG

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)


    Original     		PDF ELM34604AA-N ELM34604AA-N P2804NVG

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM34406AA-N •General description ■Features ELM34406AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=7.5A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM34406AA-N ELM34406AA-N P2804BVG

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM32408LA-S ELM32408LA-S P2804BDG O-252

    L9939

    Abstract: B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF --D28 723646Y Y12142 77105Z Y12171G 65V500A P27999G 11V256YY B10996 63244L L9939 B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910

    ELM34406AA

    Abstract: p2804bvg
    Text: 单 N 沟道 MOSFET ELM34406AA-N •概要 ■特点 ELM34406AA-N 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=7.5A ·Rds on < 28mΩ (Vgs=10V) ·Rds(on) < 42mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM34406AA-N P2804BVG ELM34406AA p2804bvg

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー N チャンネル MOSFET ELM34806AA-N •概要 ■特長 ELM34806AA-N は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=40V ・ Id=7A MOSFET です。 ・ Rds on < 28mΩ (Vgs=10V)


    Original     		PDF ELM34806AA-N P2804HVG AUG-19-2004

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)


    Original     		PDF ELM34604AA-N ELM34604AA-N P2804NVG

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM32408LA-S ELM32408LA-S P2804BDG O-252

    p2003bdg

    Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
    Text: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been


    Original     		PDF DMN3024LSD DMN3024LSS DMN2027LK3 DMP3025LK3 DMN3020LK3 DMN3024LK3 DMN4009LK3 DMN4015LK3 DMN4030LK3 DMN4036LK3 p2003bdg p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17

    p2804bvg

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM34406AA-N •General description ■Features ELM34406AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=7.5A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM34406AA-N ELM34406AA-N P2804BVG p2804bvg

    复合

    Abstract: ELM35601KA
    Text: 复合沟道 MOSFET ELM35601KA-S •概要 ■特点 ELM35601KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=40V P 沟道 ·Vds=-40V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-5.5A


    Original     		PDF ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 复合 ELM35601KA

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34806AA-N •General description ■Features ELM34806AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=7A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM34806AA-N ELM34806AA-N P2804HVG AUG-19-2004

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32408LA-S •概要 ■特長 ELM32408LA-S は低入力容量 低電圧駆動、 低 ・ Vds=40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=10A ・ Rds on < 28mΩ (Vgs=10V) ・ Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM32408LA-S P2804BDG O-252

    h9910

    Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF T13351H H67541 72V841W H67444 71V124N B11539 71V016N H67495 62373L A20338G h9910 K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: P28 North American Wall Mount .3-1.4 Watts Series Features • • • • • • • • • • • 120 VAC Input North American Wall Plug Style Rated for Continuous Duty Filtered Unregulated Outputs up to 1.4 Watts Meets Safety Agency Requirements Impact Resistant Polycarbonate Enclosure


    Original     		PDF P28-030100-A000G P28-030200-A000G P28-040100-A000G P28-040200-A000G P28-040250-A000G P28-060100-A000G P28-060200-A000G P28-090100-A000G P28-090150-A000G P28-120100-A000G

    L9939

    Abstract: k9920 h9910 K1917 L9924 K2837 B897 k3296 JEDEC-22-A113-A K9926
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF --D28 723646Y Y12142 77105Z Y12171G 65V500A P27999G 11V256YY B10996 63244L L9939 k9920 h9910 K1917 L9924 K2837 B897 k3296 JEDEC-22-A113-A K9926