K1305
Abstract: heating radiators KGF1521 KGF1522 KGF1145 KGF1146 KGF1156 KGF1165 KGF1191 KGF1203
Text: INTRODUCTION PRODUCT OVERVIEW PRODUCT/ PACKAGE CORRESPONDENCE ELECTRICAL CHARACTERISTICS PACKAGE DIMENSIONS PACKING SPECIFICATIONS HANDLING PRECAUTIONS REFLOW CONDITIONS 1 PRODUCT OVERVIEW 1 ¡ electronic components PRODUCT OVERVIEW E2Q0003-16-60 PRODUCT OVERVIEW
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E2Q0003-16-60
KGF1145
KGF1146
KGF1155B/1155
KGF1156
KGF1165
KGF1175B/1175
KGF1191
KGF1203
KGF1521
K1305
heating radiators
KGF1521
KGF1522
KGF1145
KGF1146
KGF1156
KGF1165
KGF1191
KGF1203
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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KGF1312
Abstract: jan 8168 marking HD SOT89
Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0028-38-72 ¡ electronic components KGF1312 ¡ electronic components KGF1312 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET
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E2Q0028-38-72
KGF1312
KGF1312,
OT-89
KGF1312
jan 8168
marking HD SOT89
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GaAS fet sot89
Abstract: P0* RF SOT89 pin diagram of 7473
Text: ODRKGF1312-03 Electronic Components KGF1312 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power and high efficiency. The KGF1312 specifications are guaranteed to a fixed matching circuit
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KGF1312
ODRKGF1312-03
KGF1312,
OT-89
KGF1312
850MHz;
GaAS fet sot89
P0* RF SOT89
pin diagram of 7473
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SHF-0589
Abstract: MCH18
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
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SHF-0589
SHF-0589
34dBm
500mA.
EDS-101242
MCH18
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mmic SOT-89 h1
Abstract: FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 SHF-0189 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs
Text: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
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SHF-0189
SHF-0189
100mA.
EDS-101240
mmic SOT-89 h1
FR4 dielectric constant at 2.4 Ghz
SOT-89 LM1
Stanford Microdevices 4 ghz
LL1608-FH6N8K
MCH18
FR4 dielectric constant 4.6
H1 SOT-89
S12vs
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SHF 205
Abstract: SOT-89 LM1 SHF-0189 Scattering parameter
Text: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
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SHF-0189
100mA.
EDS-101240
SHF 205
SOT-89 LM1
SHF-0189 Scattering parameter
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FR4 dielectric constant 4.6
Abstract: FR4 dielectric constant at 2.4 Ghz H1 SOT-89 fet mmic SOT-89 h1 LL1608-FH6N8K MCH18 SHF-0189 H1 SOT-89 826 5v sot-89 S12VS
Text: Product Description Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
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SHF-0189
100mA.
EDS-101240
FR4 dielectric constant 4.6
FR4 dielectric constant at 2.4 Ghz
H1 SOT-89 fet
mmic SOT-89 h1
LL1608-FH6N8K
MCH18
H1 SOT-89
826 5v sot-89
S12VS
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FR4 dielectric constant 4.6
Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
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SHF-0289
SHF-0289
30dBm
250mA.
EDS-101241
FR4 dielectric constant 4.6
CD268
Stanford SHF-0289
SHF 189
MCH18
822 a b
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Stanford SHF-0289
Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
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SHF-0289
30dBm
250mA.
EDS-101241
Stanford SHF-0289
Stanford Microdevices 4 ghz
MCH18
SHF 189
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K 1358 fet transistor
Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
Text: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。
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O35webPDF
CGRM39
RMCR03
1000pF
4700pF
K 1358 fet transistor
28428
A 27631 transistor
xmfp1-m3
XMFP3-M3
064110
9-8318
GaAS fet sot89
S0731
65851
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MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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MICROWAVE ASSOCIATES ISOLATOR
Abstract: AS218 transistor
Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and
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CAT501-09A
MICROWAVE ASSOCIATES ISOLATOR
AS218 transistor
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MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor KGF1638_ P la stic G a A s Po w er F E T for G S M and T D M A A p p lica tio n s DESCRIPTION The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is
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KGF1638_
KGF1638
OT-89
33dBm
L72424D
KGF1638
b7Z4E40
D02ET01
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cq 721
Abstract: ma 17393 KGF1323 P0* DBM SOT89 T4 0660
Text: O K I electronic components KGF1323 Power FET for UHF-Band and PCS Frequencies Plastic Mold Type G E N E R A L DESCRIPTION The KGF1323, housed in an SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency and high output power. The KGF1323 specifications are
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KGF1323
KGF1323,
OT-89
KGF1323
resistance90
7E424G
002E7T7
F1323
cq 721
ma 17393
P0* DBM SOT89
T4 0660
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1637 is a high power, high efficiency GaAs power FET that features high gain at high current w ith ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is
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KGF1637_
KGF1637
OT-89
b72424D
KGF1637
h72424D
b72MBM0
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Untitled
Abstract: No abstract text available
Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 O K I electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-to L-band. This device features high efficiency, high output
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E2Q0027-38-72
KGF1284
KGF1284,
OT-89
KGF1284
than21
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sn 10 k 0846
Abstract: type 65.53 KGF1Z83
Text: E2Q0026-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1283_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in aSOT-89 typeplastic-mold package, is a discrete UHF-band power FET
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E2Q0026-38-72
KGF1283_
KGF1283,
aSOT-89
KGF1283
KGF1283
sn 10 k 0846
type 65.53
KGF1Z83
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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transistors JX 6822 A
Abstract: MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . viii Chapter One Selector G u id e .1.1-1
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MCH12140
MCK12140
2PHX11136Q-21
transistors JX 6822 A
MATSUA compressor R12
scf 101 saw filter gte
wiring diagram audio amplifier ic 6283
am/transistors JX 6822 A
Sansui 21 i fs circuit diagram
MC145202 addendum
ne602 scrambler
motorola power transistor 7752
MC145026
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