S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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FET MARKING CODE
Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
90P03
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA
Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
OT-23-3
S-90P0112SMA-TF
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0222SUA
Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
OT-89-3
S-90P0222SUA-TF
90P03
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0332SUA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
OT-89-3
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
13003 TRANSISTOR equivalent
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2SJ356
Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.
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2SJ356
2SJ356
C10535E
MEI-1202
marking pr
p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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2SJ357
Abstract: TC-2490 C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.
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2SJ357
2SJ357
TC-2490
C11531E
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2SJ358
Abstract: MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1
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2SJ358
2SJ358
MEI-1202
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SJ317 Silicon P-Channel MOS FET November 1996 Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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2SJ317
Hitachi DSA002713
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2sj317
Abstract: Hitachi 2SJ Hitachi DSA002779
Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline 2SJ317
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2SJ317
2sj317
Hitachi 2SJ
Hitachi DSA002779
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FET marking code 365
Abstract: 2SJ244 Hitachi 2SJ Hitachi DSA00337
Text: 2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK
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2SJ244
FET marking code 365
2SJ244
Hitachi 2SJ
Hitachi DSA00337
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2SJ278
Abstract: Hitachi DSA00389
Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ278
2SJ278
Hitachi DSA00389
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Hitachi 2SJ
Abstract: Hitachi DSA002779
Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ278
Hitachi 2SJ
Hitachi DSA002779
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SJ244 Silicon P-Channel MOS FET DIII-L November 1996 Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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2SJ244
Hitachi DSA002713
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2SJ166
Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power
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2SJ166
2SJ166,
2SJ166
2SJ186
2SK1132
T100
p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
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Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ186 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 209 2SJ186
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2SJ186
2SJ186
5x20x0
Hitachi 2SJ
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Untitled
Abstract: No abstract text available
Text: 2SJ186 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline
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OCR Scan
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2SJ186
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ317 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline
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2SJ317
5x20x0
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Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ244 - Silicon P Channel MOS FET Application UPAK High speed power switching Low voltage operation 1 Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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OCR Scan
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2SJ244
Hitachi 2SJ
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PDF
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Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ244 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for cam era or VTR motor drive circuit, power switch, solenoid drive and etc. Outline
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OCR Scan
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2SJ244
5x20x0
Hitachi 2SJ
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