sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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S-90P0112SMA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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FET MARKING CODE
Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
90P03
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA
Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
OT-23-3
S-90P0112SMA-TF
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0222SUA
Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
OT-89-3
S-90P0222SUA-TF
90P03
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0332SUA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
OT-89-3
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
13003 TRANSISTOR equivalent
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2SJ357
Abstract: TC-2490 C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.
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2SJ357
2SJ357
TC-2490
C11531E
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2SJ358
Abstract: MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1
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2SJ358
2SJ358
MEI-1202
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features • For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting
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RJM0404JSC
R07DS0338EJ0500
AEC-Q101
PRSP0020DF-A
HSOP-20)
R07DS0338EJ0500
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RJM0404JSC
Abstract: No abstract text available
Text: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features • For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting
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RJM0404JSC
AEC-Q101
R07DS0338EJ0500
PRSP0020DF-A
HSOP-20)
RJM0404JSC
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RJM0603JSC
Abstract: PRSP0020DF-A
Text: Preliminary Datasheet RJM0603JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0339EJ0501 Rev.5.01 Jul 22, 2011 Features • For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting
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RJM0603JSC
R07DS0339EJ0501
AEC-Q101
PRSP0020DF-A
HSOP-20)
R07DS0339EJ0501
RJM0603JSC
PRSP0020DF-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJM0407JSC 40 V - 20 A - N/P Channel Power MOS FET 6 in 1 Type R07DS0368EJ0100 High Speed Power Switching Rev.1.00 Sep 20, 2012 Features • For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting
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RJM0407JSC
R07DS0368EJ0100
AEC-Q101
PRSP0020DF-A
HSOP-20)
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2SJ356
Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.
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2SJ356
2SJ356
C10535E
MEI-1202
marking pr
p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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2sj353 transistor
Abstract: 2SJ353 C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 7.0 MAX. This product has a low ON resistance and superb switching
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2SJ353
2SJ353
2sj353 transistor
C10535E
MEI-1202
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transistor 2sk
Abstract: S10ms 2SJ184 2SK1398 T100 T200
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device
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2SJ184
2SJ184,
transistor 2sk
S10ms
2SJ184
2SK1398
T100
T200
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2SJ180
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device
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2SJ180
2SJ180,
2SJ180
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2SJ166
Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power
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2SJ166
2SJ166,
2SJ166
2SJ186
2SK1132
T100
p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
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2SJ180
Abstract: No abstract text available
Text: MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power OUTLINE DIMENSIONS U n it: mm source.
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2SJ180
2SJ180,
2SJ180
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S10ms
Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
Text: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.
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2SJ184
2SJ184,
S10ms
2SJ184
2SK1398
T100
T200
TC-7645A
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NEC Zener diode product List
Abstract: 2SJ178 2sj178 transistor
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ178 P-CHANIMEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ178 is a p-channel vertical type MOS FET switching device
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2SJ178
2SJ178
NEC Zener diode product List
2sj178 transistor
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