IXTR120P20T
Abstract: No abstract text available
Text: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS
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IXTR120P20T
300ns
ISOPLUS247
E153432
120P20T
IXTR120P20T
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS
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IXTR120P20T
300ns
ISOPLUS247
E153432
-55nds
120P20T
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90P06-06P P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 6.2 @ VGS = -10V 7.3 @ VGS = -4.5V ID (A) 90a Typical Applications:
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AM90P06-06P
17failure
AM90P06-06P
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90P06-20B P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = -10V 22 @ VGS = -4.5V ID (A) -90a Typical Applications:
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AM90P06-20B
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DIODE 5035
Abstract: No abstract text available
Text: SHD219720 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5035, REV. - LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 60 Volt, 0.01 Ohm, 90A MOSFET • Isolated Hermetic Metal Package • Ultra Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD219720
DIODE 5035
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switching pushpull
Abstract: IXTN90P20P
Text: PolarPTM Power MOSFET IXTN90P20P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 90A Ω 44mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTN90P20P
OT-227
E153432
100ms
90P20P
04-22-08-C
switching pushpull
IXTN90P20P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 90A Ω 25mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH90P10P
IXTT90P10P
O-247
100ms
90P10P
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IXTR140P10T
Abstract: No abstract text available
Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR140P10T
-100V
ISOPLUS247
E153432
-140A
140P10T
IXTR140P10T
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH90P10P
IXTT90P10P
O-247
O-268
90P10P
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P channel MOSFET 50A
Abstract: KRF7105
Text: IC IC SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol
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KRF7105
-100A/
P channel MOSFET 50A
KRF7105
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irf7105 mosfet
Abstract: IRF7105 DIODE irf 7487 IRf 48 MOSFET transistor irf 649 MS-012AA IRF7105N 12V P-Channel Power MOSFET
Text: PD - 91097E IRF7105 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N-CHANNEL MOSFET 1 8
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91097E
IRF7105
EIA-481
EIA-541.
irf7105 mosfet
IRF7105
DIODE irf 7487
IRf 48 MOSFET
transistor irf 649
MS-012AA
IRF7105N
12V P-Channel Power MOSFET
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IRf 48 MOSFET
Abstract: transistor irf 649 irf7105pbf f710 IRF7101 MS-012AA
Text: PD - 95164 IRF7105PbF Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET
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IRF7105PbF
EIA-481
EIA-541.
IRf 48 MOSFET
transistor irf 649
irf7105pbf
f710
IRF7101
MS-012AA
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Untitled
Abstract: No abstract text available
Text: Data Sheet N0439N N-channel MOSFET R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 40 V, 90 A, 3.3 mΩ Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS on = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
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N0439N
R07DS1065EJ0100
O-220
N0439N-S19-AY
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KRF7309
Abstract: smd diode nh
Text: IC IC SMD Type HEXFET Power MOSFET KRF7309 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel
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KRF7309
-100A/
KRF7309
smd diode nh
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IRF9Z14L
Abstract: IRF9Z14S marking 67A
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
IRF9Z14L
IRF9Z14S
marking 67A
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F7309
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRF7309Q HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant
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AUIRF7309Q
F7309
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Transistor Mosfet N-Ch 30V
Abstract: No abstract text available
Text: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6 '
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6111A
IRF7379QPbF
EIA-481
EIA-541.
Transistor Mosfet N-Ch 30V
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Untitled
Abstract: No abstract text available
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
08-Mar-07
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1RF7105
Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !
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1097B
IRF7105
1RF7105
1RF710
irf7105 mosfet
MOSFET C65
irf7105
ior 050a
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Untitled
Abstract: No abstract text available
Text: SSP2N80A A d v a n c e d Power MOSFET FEATURES B V dss " 800 V • Avalanche Rugged Technology ■ ^DS on = 6.0 Q Rugged Gate Oxide Technology < Improved Gate Charge CM II Lower Input Capacitance ■ _Q ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 800V
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SSP2N80A
003b32fl
O-220
7Tb4142
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PDF
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Untitled
Abstract: No abstract text available
Text: International Rectifier PD 9.1097A IRF7105 preliminary HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7105
Q02b4R7
111161X
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PDF
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching
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1243B
IRF7309
4fl55M
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PDF
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MOSFET IRF 630
Abstract: IRF630 f630 IRF630R 633R
Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*
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IRF630R/631R/632R/633R
IRF630,
IRF631,
IRF632,
IRF633
IRF630R,
IRF631R,
IRF632R
IRF633R
MOSFET IRF 630
IRF630
f630
IRF630R
633R
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Untitled
Abstract: No abstract text available
Text: Infineon Preliminary Data PROFEf BTS 6510 technologies Smart Highside High Current Power Switch Reverse Save Product Summary • Reverse battery protection by self turn on of power MOSFET Overvoltage protection Vbb AZ Output clamp Operating voltage VoN(CL)
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