Untitled
Abstract: No abstract text available
Text: PD-94605B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -30A -30A Low-Ohmic
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PD-94605B
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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12v 30A regulator
Abstract: P-channel 200V 30A mosfet IRHMS593260 IRHMS597260 L-073 PD946
Text: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A
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PD-94605E
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
12v 30A regulator
P-channel 200V 30A mosfet
L-073
PD946
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Untitled
Abstract: No abstract text available
Text: PD-94605D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A
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PD-94605D
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A
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PD-94605E
O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
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12V 30A diode
Abstract: AS025
Text: PD-94605C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597260 100K Rads (Si) 0.103Ω IRHMS593260 300K Rads (Si) 0.103Ω ID -30A -30A International Rectifier’s R5TM technology provides
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PD-94605C
O-254AA)
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
12V 30A diode
AS025
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ISOPLUS247
Abstract: IXTR48P20P 48P20P
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR48P20P VDSS ID25 RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V
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IXTR48P20P
ISOPLUS247
E153432
100ms
48P20P
ISOPLUS247
IXTR48P20P
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTR48P20P RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200
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IXTR48P20P
ISOPLUS247
E153432
100ms
48P20P
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IXTR48P20P
Abstract: 48P20P ISOPLUS247
Text: IXTR48P20P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200
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IXTR48P20P
ISOPLUS247
E153432
100ms
48P20P
IXTR48P20P
ISOPLUS247
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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FS20KMA-4A
Abstract: fs20kma
Text: MITSUBISHI Nch POWER MOSFET ARY FS20KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2
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FS20KMA-4A
FS20KMA-4A
fs20kma
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FS20UMA-4A
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ARY FS20UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20UMA-4A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0
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FS20UMA-4A
FS20UMA-4A
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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FL16KM-6A
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ARY FL16KM-6A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL16KM-6A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2
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FL16KM-6A
FL16KM-6A
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12 volt 200 Amp PWM
Abstract: 20a step motor MSK4322
Text: ISO-9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. 8170 Thompson Road FEATURES: 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID Cicero, N.Y. 13039 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.0°C/W Each MOSFET
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ISO-9001
25KHz
MIL-PRF-38534
MSK4322
MIL-PRF-38534
12 volt 200 Amp PWM
20a step motor
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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sot-23 pinout
Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Text: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx
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Power33
Power56
FAN73xx
FAN4800
sot-23 pinout
431 sot23-5
FAN21SV06
11n60f
FAN7385
FAN7382
FAN7380
fan3000
5N60 datasheet
4N60 fairchild
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Untitled
Abstract: No abstract text available
Text: IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak
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IXDN430
IXDI430
IXDD430
IXDS430
IXDN430/IXDI430/IXDD430/IXDS430
2N3904
Edisonstrasse15
D-68623;
DS99045
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2N6765
Abstract: 2n6766
Text: 23 H a r r is 2N 6 765 2N 6 766 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features T 0 -2 0 4 A E BOTTOM VIEW • 25A and 30A , 1 50V - 200V • rD S on = 0 .0 8 5 0 and 0 .1 2 0 DRAIN ^ (FLANGE) SOURCE • S O A is P o w er-D issip a tio n Lim ited
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2N6765
2N6766
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2SK1812
Abstract: F30W30
Text: L V X v 'J -X /^ -M O S F E T LVX SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK1812 F30W30 300v 30a • Æ fê ïl R A T IN G S A bsolute M a x im u m R atings m Item g -» IB 9k Symbol Storage Temperature ■f-^^>U§Lfg_ Channel Temperature Y v -4 > ■ V — x B i
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2SK1812
F30W30)
I00VX
2SK1812
F30W30
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per
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FS14SM-16A
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024q
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS22SM-9 HIGH-SPEED SWITCHING USE FS22SM-9 OUTLINE DRAWING Dimensions in mm .4-5, 1.5 k r 2.8 ^ jjjd • v d s s •450V •0.24Q •• 22A . • ros ON (MAX) • I d . I.' GATE DRAIN Î SOURCE
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FS22SM-9
024q
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IRF250R
Abstract: free IR circuit diagram
Text: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi
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IRF250,
IRF251,
IRF252,
IRF253
IRF250R,
IRF251R,
IRF252R,
IRF253R
RE14b.
IRF250R
free IR circuit diagram
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ilpi 215
Abstract: C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42
Text: □OB' PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses MOSFETs in the output stage while the
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PWR-82340
PWR-82342
PWR-82342
PWR-82340/342
8234X
ilpi 215
C1 1OOUF
ilc 150 eth
transistor k41
brush dc motor control 200v 20a
h-bridge igbt pwm
k3900
82340
ilpi -115
transistor k42
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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